VS-16EDH06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 16 A FRED Pt
®
eSMP
®
Series
K
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM, snubber operation
• Low forward voltage drop
1
2
Top View
Bottom View
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMPD (TO-263AC)
K
Cathode
Anode 1
Anode 2
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and ultrafast
recovery time, and soft recovery.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
(T
J
= 150 °C)
t
rr
T
J
max.
Package
Circuit configuration
16 A
600 V
1.24 V
30 ns
175 °C
SMPD (TO-263AC)
Single
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, lighting,
in the AC/DC section of SMPS, freewheeling and clamp
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
SYMBOL
V
RRM
I
F(AV) (1)
I
FSM
T
C
= 127 °C
T
J
= 25 °C, 10 ms sine pulse
TEST CONDITIONS
VALUES
600
16
160
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 16 A
I
F
= 16 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.65
1.24
-
-
16
MAX.
-
2.15
1.65
20
500
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Note
(1)
Mounted on infinite heatsink
Revision: 08-Mar-18
Document Number: 96228
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16EDH06-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 16 A,
dI
F
/dt = 500 A/μs,
V
R
= 400 V
MIN.
-
-
-
-
-
-
-
-
TYP.
30
-
43
92
7.7
13.8
150
600
MAX.
-
30
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to solder pad
Approximate weight
Marking device
Case style SMPD (TO-263AC)
SYMBOL
T
J
, T
Stg
R
thJ-Sp
TEST CONDITIONS
MIN.
-55
-
TYP.
-
1.2
0.55
0.02
16EDH06
MAX.
+175
1.7
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
1000
100
10
T
J
= 125 °C
1
0.1
T
J
= 25 °C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
T
J
= 175 °C
T
J
= 150 °C
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 25 °C
0.1
I
R
- Reverse Current (μA)
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 08-Mar-18
Document Number: 96228
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16EDH06-M3
www.vishay.com
Vishay Semiconductors
100
C
T
- Junction Capacitance (pF)
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.00001
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
130
120
110
160
100
150
140
130
120
110
See
note
(1)
100
0
5
10
15
20
25
Square
wave (D = 0.50)
80 % rated V
R
applied
DC
90
125 °C
Allowable Case Temperature (°C)
170
t
rr
(ns)
80
70
60
50
40
30
100
200
25 °C
300
400
500
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
dI
F
/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Revision: 08-Mar-18
Document Number: 96228
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16EDH06-M3
www.vishay.com
Vishay Semiconductors
600
35
30
25
20
15
10
5
0
0
5
10
15
20
25
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
Average Power Loss (W)
500
400
125 °C
Q
rr
(nC)
300
200
100
0
100
150
200
250
300
350
400
450
500
25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 08-Mar-18
Document Number: 96228
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16EDH06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
16
E
D
H
06
-M3
1
1
2
3
-
-
-
2
3
4
5
6
7
Vishay
Semiconductors
product
Current rating (16 A)
Circuit configuration:
E =
single
die
4
5
6
7
-
-
-
-
D =
SMPD
package
Process type,
H = hyperfast recovery
Voltage code (06 = 600 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-16EDH06-M3/I
QUANTITY PER REEL
2000
MINIMUM ORDER QUANTITY
2000
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95604
www.vishay.com/doc?95566
www.vishay.com/doc?88869
Revision: 08-Mar-18
Document Number: 96228
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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