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47C16T-I/SN

产品描述静态随机存取存储器 16k, 5.0V EERAM IND
产品类别存储    存储   
文件大小547KB,共41页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
下载数据手册 下载用户手册 详细参数 全文预览

47C16T-I/SN概述

静态随机存取存储器 16k, 5.0V EERAM IND

47C16T-I/SN规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microchip(微芯科技)
包装说明SOIC-8
Reach Compliance Codecompliant
Factory Lead Time11 weeks
其他特性IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度16384 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级3
功能数量1
端子数量8
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
筛选级别TS 16949
座面最大高度1.75 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
宽度3.9 mm

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47L04/47C04/47L16/47C16
4K/16K I
2
C Serial EERAM
Device Selection Table
Part Number
47L04
47C04
47L16
47C16
Density (bits)
4K
4K
16K
16K
V
CC
Range
2.7-3.6V
4.5-5.5V
2.7-3.6V
4.5-5.5V
Max. Clock
Frequency
1 MHz
1 MHz
1 MHz
1 MHz
Temperature
Ranges
I, E
I, E
I, E
I, E
Packages
P, SN, ST
P, SN, ST
P, SN, ST
P, SN, ST
Features
• 4 Kbit/16 Kbit SRAM with EEPROM Backup:
- Internally organized as 512 x 8 bits (47X04)
or 2,048 x 8 bits (47X16)
- Automatic Store to EEPROM array upon
power-down (using optional external
capacitor)
- Automatic Recall to SRAM array upon
power-up
- Hardware Store pin for manual Store
operations
- Software commands for initiating Store and
Recall operations
- Store time 8 ms maximum (47X04) or
25 ms maximum (47X16)
• Nonvolatile External Event Detect Flag
• High Reliability:
- Infinite read and write cycles to SRAM
- More than one million store cycles to
EEPROM
- Data retention: >200 years
- ESD protection: >4,000V
• High-Speed I
2
C Interface:
- Industry standard 100 kHz, 400 kHz and
1 MHz
- Zero cycle delay reads and writes
- Schmitt Trigger inputs for noise suppression
- Cascadable up to four devices
• Write Protection:
- Software write protection from 1/64 of SRAM
array to whole array
• Low-Power CMOS Technology:
- 200 µA active current typical
- 40 µA standby current (maximum)
• 8-Lead PDIP, SOIC, and TSSOP Packages
• Available Temperature Ranges:
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
Description
The
Microchip
Technology
Inc.
47L04/47C04/47L16/47C16 (47XXX) is a 4/16 Kbit
SRAM with EEPROM backup. The device is organized
as 512 x 8 bits or 2,048 x 8 bits of memory, and
utilizes the I
2
C serial interface. The 47XXX provides
infinite read and write cycles to the SRAM while
EEPROM cells provide high-endurance nonvolatile
storage of data. With an external capacitor, SRAM
data is automatically transferred to the EEPROM upon
loss of power. Data can also be transferred manually
by using either the Hardware Store pin or software
control. Upon power-up, the EEPROM data is
automatically recalled to the SRAM. Recall can also
be initiated through software control.
The 47XXX is available in the 8-lead PDIP, SOIC, and
TSSOP packages.
Block Diagram
V
CC
V
CAP
Power
Control
Block
SDA
SCL
A2, A1
I
2
C Control Logic
Slave Address
Decoder
Status Register
EEPROM
512 x 8
2K x 8
HS
Memory Address
and Data Control
Logic
SRAM
512 x 8
2K x 8
STORE
RECALL
2015-2016 Microchip Technology Inc.
DS20005371C-page 1

 
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