PMDPB85UPE
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= -4.5 V; I
D
= -1.3 A; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
82
Max
-20
8
-3.7
103
Unit
V
V
A
mΩ
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Nexperia
PMDPB85UPE
20 V dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
1
2
3
S1
S2
017aaa260
Simplified outline
6
5
4
Graphic symbol
D1
D2
7
8
G1
G2
Transparent top view
DFN2020-6 (SOT1118)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMDPB85UPE
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
Version
SOT1118
Type number
4. Marking
Table 4.
Marking codes
Marking code
2C
Type number
PMDPB85UPE
5. Limiting values
Table 5.
Symbol
Per transistor
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
Source-drain diode
I
S
PMDPB85UPE
Limiting values
Parameter
Conditions
T
j
= 25 °C
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Min
-
-8
-
-
-
-
[2]
[1]
Max
-20
8
-3.7
-2.9
-1.8
-11.6
515
1170
8330
-1.2
Unit
V
V
A
A
A
A
mW
mW
mW
A
-
-
-
source current
T
amb
= 25 °C
All information provided in this document is subject to legal disclaimers.
[1]
-
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
2 of 15
Nexperia
PMDPB85UPE
20 V dual P-channel Trench MOSFET
Table 5.
Symbol
V
ESD
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
Limiting values
…continued
Parameter
electrostatic discharge voltage
junction temperature
ambient temperature
storage temperature
Conditions
HBM; C = 100 pF; R = 1.5 kΩ
[3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Min
-
-55
-55
-65
Max
2000
150
150
150
Unit
V
°C
°C
°C
ESD maximum rating
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMDPB85UPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
3 of 15
Nexperia
PMDPB85UPE
20 V dual P-channel Trench MOSFET
-10
2
I
D
(A)
-10
t
p
= 100 μs
t
p
= 1 ms
t
p
= 10 ms
DC; T
sp
= 25 °C
-10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
-10
-2
-10
-1
t
p
= 100 ms
aaa-003928
Limit R
DSon
= V
DS
/I
D
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
in free air
in free air; t
≤
5 s
[1]
[2]
[2]
Thermal characteristics
Parameter
Conditions
Min
-
-
-
-
Typ
211
93
55
12
Max
243
107
64
15
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
PMDPB85UPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
4 of 15
Nexperia
PMDPB85UPE
20 V dual P-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
0.05
0.02
0.01
1
0
0.5
0.25
0.1
10
aaa-003929
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
10
0.05
0.02
1
0.01
0
0.5
0.25
0.1
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-003930
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB85UPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
5 of 15
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