AN11007
Single stage 5-6 GHz WLAN LNA with BFU730F
Rev. 2 — 20 November 2012
Application note
document information
Info
Content
Keywords
Abstract
BFU730F, LNA, 802.11a & 802.11n MIMO WLAN
The document provides circuit, layout, BOM and performance information
on 5-6 GHz band LNA equipped with NXP’s BFU730F wide band
transistor.
This Application note is related to evaluation board
OM7691/BFU730F,598 12nC 934065628598
NXP Semiconductors
AN11007
5-6 GHz LNA
Revision history
Rev
Date
1
2
20110104
20121120
Description
Initial document.
Chapter added about switching time.
Contact information
For additional information, please visit:
http://www.nxp.com
For sales office addresses, please send an email to:
salesaddresses@nxp.com
AN11007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Application note
Rev. 2 — 20 November 2012
2 of 23
NXP Semiconductors
AN11007
5-6 GHz LNA
1. Introduction
The BFU730F is a discrete HBT that is produced using NXP Semiconductors’ advanced
110 GHz f
T
SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with
the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in
the base layer suppresses the boron diffusion during wafer processing. This allows
steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base
resistance, lower noise and higher cut off frequency can be achieved.
The BFU730F is one of a series of transistors made in SiGe:C.
BFU710F; BFU760 and BFU790 are the other types, BFU710 is intended for ultra low
current applications. The BFU760F and BFU790F are high current types and are
intended for application where linearity is key.
The BFU7XXF are ideal in all kind of applications where cost matters. It also gives
design flexibility.
2. Requirements and design of the 5-6 GHz WLAN LNA
The circuit shown in this application note is intended to demonstrate the performance of
the BFU730 in a 5-6 GHz LNA for e.g. 802.11 & 802.11n “MIMO” WLAN applications.
Key requirements for this application as are:
•
NF
•
Gain
•
Turn on turn of time
•
Linearity.
The target for this circuit is listed in table 1.
Table 1.
Target spec.
Target specification of the 5-6GHz LNA.
Vcc
3
V
Icc
10
mA
NF
<2
dB
Gain
>15
dB
IRL
>10
dB
ORL
>10
dB
3. Design
The 5-6 GHz LNA consists of one stage BFU730F amplifier. For this amplifier 12 external
components are used, for matching, biasing and decoupling.
The design has been conducted using Agilent’s Advanced Design System (ADS). The
2D EM Momentum tool has been used to co simulate the PCB see
Fig 1.
Results are
given in paragraph
4.5.
The LNA shows a Gain of 14 dB @5.5 GHz, NF of 1.3 dB, with only 10 mA it shows a
high input P1 dB compression of –7.5 dBm, as well as a input IP3 of +10 dBm.
Finally the LNA is unconditional stable 10 MHz-20 GHz.
AN11007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Application note
Rev. 2 — 20 November 2012
3 of 23
NXP Semiconductors
AN11007
5-6 GHz LNA
3.1 BFU730F 5-6 GHz-ADS Simulation circuit
Fig 1.
ADS simulation circuit for 5-6 GHz WLAN LNA
AN11007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Application note
Rev. 2 — 20 November 2012
4 of 23
NXP Semiconductors
AN11007
5-6 GHz LNA
3.2 BFU730F 5-6 GHz - ADS Gain and match simulation results
Fig 2.
ADS Gain and match simulation results for 5-6 GHz WLAN LNA
AN11007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Application note
Rev. 2 — 20 November 2012
5 of 23
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
