BT138Y-600E
15 September 2018
4Q Triac
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D (TO-220AB)
plastic package intended for use in general purpose bidirectional switching and phase control
applications. This sensitive gate "series E" triac can be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits. The internally insulated mounting base
gives good thermal performance combined with ease of handling and assembly by the user.
2. Features and benefits
•
•
•
•
•
•
•
•
•
2500 V RMS isolation voltage capability
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Industry standard TO-220 package for ease of handling
Isolated mounting base
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
•
•
230 V lamp dimmers
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 85 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
Typ
-
-
-
-
-
-
Max
600
12
95
105
125
10
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT138Y-600E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
-
-
Typ
-
-
-
-
1.4
50
Max
10
10
25
30
1.65
-
Unit
mA
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 15 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
Dynamic characteristics
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
BT138Y-600E
Package
Name
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BT138Y-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
2 / 13
WeEn Semiconductors
BT138Y-600E
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
12
95
105
45
50
50
50
10
2
5
0.5
150
125
003aac231
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 85 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
=
100
mA;
T2+ G+
I
G
=
100
mA;
T2+ G-
I
G
=
100
mA;
T2- G-
I
G
=
100
mA;
T2- G+
-
-
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
30
I
T(RMS)
(A)
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aac230
over any 20 ms period
-
-40
-
15
I
T(RMS)
(A)
20
10
10
5
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz; T
mb
= 85 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
BT138Y-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
3 / 13
WeEn Semiconductors
BT138Y-600E
4Q Triac
20
P
tot
(W)
15
003aac227
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
79
T
mb(max)
(°C)
90.5
α
α = 180°
120°
α
90°
60°
30°
102
10
5
113.5
0
0
2
4
6
8
10
12
I
T(RMS)
(A)
14
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
100
80
60
40
20
0
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
003aac228
120
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT138Y-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
4 / 13
WeEn Semiconductors
BT138Y-600E
4Q Triac
10
3
I
TSM
(A)
I
T
003aac229
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT138Y-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
5 / 13
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