NVMFS6B85NL
Power MOSFET
100 V, 46 mW, 19 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS6B85NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 3)
Power Dissipation
R
qJC
(Notes 1, 2)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
100
±16
19
14
42
21
5.6
4.0
3.5
1.75
93
−55 to
+ 175
32
116
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
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V
(BR)DSS
100 V
R
DS(ON)
MAX
46 mW @ 10 V
72 mW @ 4.5 V
I
D
MAX
19 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 1.7 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
6B85xx
AYWZZ
D
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
6B85NL = NVMFS6B85NL
6B85LW = NVMFS6B85NLWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
3.6
43
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2016
1
August, 2016 − Rev. 0
Publication Order Number:
NVMFS6B85NL/D
NVMFS6B85NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
64
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 16 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.2
−5.2
2.4
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
37
I
D
= 10 A
55
46
72
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.88
0.76
39.4
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
22.7
16.7
40
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 50 V,
I
D
= 10 A, R
G
= 2.5
W
6.9
66.9
12.5
55.9
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 10 V, V
DS
= 50 V; I
D
= 10 A
V
GS
= 4.5 V, V
DS
= 50 V; I
D
= 10 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
480
170
15
3.8
7.9
1.1
2.4
1.1
4.0
V
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS6B85NL
TYPICAL CHARACTERISTICS
20
20
4.5 V
I
D
, DRAIN CURRENT (A)
18
16
14
12
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= −55°C
3
4
5
T
J
= 25°C
V
DS
= 10 V
V
GS
= 10 V
to 5 V
I
D
, DRAIN CURRENT (A)
15
3.6 V
10
3.4 V
3.2 V
5
3.0 V
2.8 V
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
50
48
46
44
42
40
38
36
34
32
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 10 A
T
J
= 25°C
70
65
60
55
50
45
40
35
30
5
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
10
15
20
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.4
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25
1
0
25
50
75
100
125
150
175
I
D
= 10 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1K
10K
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
10
5
15
25
35
45
55
65
75
85
95
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFS6B85NL
TYPICAL CHARACTERISTICS
C
iss
C
oss
C, CAPACITANCE (pF)
100
C
rss
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1000
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Q
g
, TOTAL GATE CHARGE (nC)
T
J
= 25°C
V
DS
= 50 V
I
D
= 10 A
Q
gs
Q
gd
10
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
1
0
10
20
30
40
50
60
70
80
90
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
100
Figure 8. Gate−to−Source Voltage vs. Total
Charge
t, TIME (ns)
100
t
r
t
f
t
d(off)
T
J
= 25°C
10
T
J
= 125°C
10
t
d(on)
V
DS
= 50 V
I
D
= 10 A
V
GS
= 4.5 V
10
R
G
, GATE RESISTANCE (W)
100
1
1
1
0.3
0.5
0.7
T
J
= −55°C
0.9
1.1
1.3
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
100
I
PEAK
, DRAIN CURRENT (A)
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
T
J(initial)
= 25°C
T
J(initial)
= 100°C
1
10
10
ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
500
ms
1 ms
10 ms
100
1000
0.1
0.1
0.0001
0.001
T
AV
, TIME IN AVALANCHE (sec)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. T
AV
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NVMFS6B85NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
NVMFS6B85NL5x6 SOFL PCB Cu
Area 650 mm
2
PCB Cu thk 2 oz
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFS6B85NLT1G
NVMFS6B85NLWFT1G
NVMFS6B85NLT3G
NVMFS6B85NLWFT3G
Marking
6B85NL
6B85LW
6B85NL
6B85LW
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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