260Pin DDR4 2400 1.2V SO-DIMM
8GB Based on 1024Mx8
AQD-SD4L8GN24-HEI
Description
AQD-SD4L8GN24-HEI is a DDR4 2400Mbps SO-DIMM
high-speed, memory module that use 8pcs of 1024M x 8
bits DDR4 SDRAM in FBGA package and a 4K bits serial
EEPROM on a 260-pin printed circuit board.
AQD-SD4L8GN24-HEI is a Dual In-Line Memory Module
and is intended for mounting into 260-pin edge connector
sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
VDD
VDDQ
V
REF
CA
V
DD
SPD
SA0~SA2
EEPROM
SCL
SDA
VSS
RESET_n
VTT
VPP
ALERT_n
EVENT_n
RFU
I2C serial bus clock for EEPROM
I2C serial bus data for EEPROM
Ground
Set DRAMs Known State
DRAM I/O termination supply
SDRAM Supply
Register ALERT_n output
SPD signals a thermal event has
occurred
Reserved for future use
Core power supply
I/O driver power supply
Command/address reference supply
SPD EEPROM power supply
I2C serial bus address select for
CK0_c, CK1_c
ODT0 &ODT1
CS0_n–CS3_n
RAS_n
CAS_n
WE_n
2
3
DQ0~DQ63
DQS0_t–DQS17_t
DQS0_c–DQS17_c
CK0_t, CK1_t
Bi-direction data bus.
Data Buffer data strobes
Data Buffer data strobes
Register clock input
Registert clocks input
On-die termination control line
DIMM Rank Select Lines input.
Row address strobe
Column address strobe
Write Enable
Data masks/high data strobes
4
DM0~DM7
Features
RoHS compliant products.
JEDEC standard 1.2V(1.14V~1.26V) Power supply
VDDQ= 1.2V(1.14V~1.26V)
VPP = 2.5V +0.25V / -0.125V
Data transfer rates: PC3-12800
Programmable CAS Latency:
10,11,12,13,14,15,16,17,18
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4
Bi-directional Differential Data-Strobe
On Die Termination, Nominal, Park, and Dynamic ODT
Serial presence detect with EEPROM
Asynchronous reset
Anti - sulfur resistor used
Industrial Temperature( -40°C ~ 85 °C)
Pin Identification
Symbol
A0–A17
1
, BA0~BA1
Function
Address/Bank input
1. Address A17 is only valid for 16 Gb x4 based SDRAMs.
2. RAS_n is a multiplexed function with A16.
3. CAS_n is a multiplexed function with A15.
4. WE_n is a multiplexed function with A14.
2
260Pin DDR4 2400 1.2V SO-DIMM
8GB Based on 1024Mx8
AQD-SD4L8GN24-HEI
8GB, 1Gx8 Module (1 Rank x8)
This technical information is based on industry standard data and tests believed to be reliable. However, Advantech makes no warranties, either
expressed or implied, as to its accuracy and assume no liability in connection with the use of this product. Advantech reserves the right to make
changes in specifications at any time without prior notice.
5
嵌入式系统
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