Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
FEATURES
•
Internally matched to 50
Ω
•
Very high gain (up to 37 dB at 2 Ghz)
•
Sloped gain curve for optimal performance
with output into lossy cable
•
14 dBm saturated output power at 1 GHz
•
High linearity (23 dBm IP3
(out)
at 1 GHz)
•
40 dB isolation
APPLICATIONS
•
LNB IF amplifiers
•
Cable systems
•
General purpose.
1
2
3
MAM455
BGM1011
PINNING
PIN
1
2, 5
3
4
6
V
S
GND2
RF out
GND1
RF in
DESCRIPTION
6
5
4
1
6
3
4
2, 5
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Top view
Marking code:
C1-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
|s
21
|
2
NF
P
L(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
CONDITIONS
5
25.5
30
4.7
13.8
TYP.
6
−
−
−
−
MAX.
V
mA
dB
dB
dBm
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
S
I
S
P
tot
T
stg
T
j
P
D
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
T
s
≤
90
°C
CONDITIONS
RF input AC coupled
−
−
−
−65
−
−
MIN.
6
35
200
+150
150
0
MAX.
UNIT
V
mA
mW
°C
°C
dBm
2002 Jan 14
2
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
THERMAL RESISTANCE
SYMBOL
R
th j-s
PARAMETER
CONDITIONS
BGM1011
VALUE
300
UNIT
K/W
thermal resistance from junction to solder point P
tot
= 200 mW; T
s
≤
90
°C
CHARACTERISTICS
V
S
= 5 V; I
S
= 25.5 mA; T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
S
|s
21
|
2
PARAMETER
supply current
insertion power gain
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
R
L IN
R
L OUT
NF
BW
K
P
L(sat)
P
L 1 dB
IP3
(in)
IP3
(out)
return losses input
return losses output
noise figure
bandwidth
stability factor
saturated load power
load power
input intercept point
output intercept point
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at
|s
21
|
2
−3
dB below flat gain at 1 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
20
TYP.
25.5
25
30
35
37
32
28
11
8
18
12
4.7
4.6
2.9
1.8
0.9
13.8
10.8
12.2
7.7
−7
−20
23
16
MAX.
32
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
−
−
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
2002 Jan 14
3
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
APPLICATION INFORMATION
BGM1011
Figure 2 shows a typical application circuit for the BGM1011 MMIC. The device is internally matched to 50
Ω,
and
therefore does not need any external matching. The value of the input and output DC blocking capacitors C1, C2 should
be not more than 100 pF for applications above 100 MHz. Their values can be used to fine tune the input and output
impedance. However, when the device is operated below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke, L1 is 100 nH. At frequencies below 100 MHz this value should be increased to
200 nH. At frequencies between 1 and 3 GHz a much lower value must be used (e.g. 18 nH) to improve return losses.
For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should
be chosen.
Capacitor, C4 and resistor, R1 are added for optimal supply decoupling.
Both the RF choke, L1 and the 22 nF supply decoupling capacitor, C3 should be located as closely as possible to the
MMIC.
Separate paths must be used for the ground planes of the ground pins GND1, GND2, and these paths must be as short
as possible. When using vias, use multiple vias per pin in order to limit ground path inductance.
Vs
C
4
1 [Vs]
R
1
L
1
C
3
C
1
RF in
6 [In]
Fig.2 Typical application circuit
BGM1011
SOT363
C
2
RF out
3 [Out]
4 [GND1]
2,5 [GND2]
Fig.2 Typical application circuit
List of components used for the typical application; an amplifier for LNB IF output.
COMPONENT
C1, C2
C3
C4
R1
L1
DESCRIPTION
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD resistor
SMD inductor
100 pF
22 nF
5.6 pF
10
Ω
10 to 200 nH
VALUE
DIMENSIONS.
0603
0603
0603
0603
0603
2002 Jan 14
4
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