BGY787
750 MHz, 21.5 dB gain push-pull
Rev. 9 — 19 September 2011
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a voltage supply of
24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1
2
3
5
7
8
9
1.2 Features and benefits
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Excellent linearity
1.3 Applications
CATV systems operating in the frequency range of 40 MHz to 750 MHz
1.4 Quick reference data
Table 1.
Symbol
G
p
I
tot
[1]
Quick reference data
Parameter
power gain
total current consumption (DC)
Conditions
f = 50 MHz
f = 750 MHz
V
B
= 24 V
[1]
Min
21
21.5
-
Typ
21.5
22.5
220
Max
22
-
240
Unit
dB
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
NXP Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
2. Pinning information
Table 2.
Pin
1
2
3
5
7
8
9
Pinning
Description
input
common
common
+V
B
common
common
output
1 3 5 7 9
1
5
9
Simplified outline
Symbol
2 3 7 8
sym095
3. Ordering information
Table 3.
Ordering information
Package
Name
BGY787
-
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
i
T
stg
T
mb
RF input voltage
storage temperature
mounting base temperature
Conditions
Min
-
40
20
Max
60
+100
+100
Unit
dBmV
C
C
BGY787
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 19 September 2011
2 of 12
NXP Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
5. Characteristics
Table 5.
Characteristics at bandwidth 40 MHz to 750 MHz
V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
.
Symbol
G
p
SL
FL
s
11
Parameter
power gain
slope cable equivalent
flatness of frequency response
input return losses
Conditions
f = 50 MHz
f = 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
s
22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
S21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
f = 50 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
Min
21
21.5
0
-
20
18.5
17
15.5
14
20
18.5
17
15.5
14
45
-
-
-
[1]
Typ
21.5
22.5
1
0.2
33
30
25
22
20.5
28.5
27.5
25
22
20
-
Max
22
-
1.5
0.5
-
-
-
-
-
-
-
-
-
-
+45
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
54.5 53
54
52
composite second order distortion 110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
second order distortion
output voltage
noise figure
d
im
=
60
dB
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 750 MHz
[2]
57.5 53
75
63
4
-
-
-
5
220
63
-
5
5.5
5.5
6
6.5
240
-
61
-
-
-
-
-
I
tot
[1]
[2]
[3]
total current consumption (DC)
[3]
-
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
Measure according to DIN45004B;
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
6
dB; f
r
= 749.25 MHz; V
r
= V
o
6 dB; measured at f
p
+ f
q
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGY787
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 19 September 2011
3 of 12
NXP Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
Table 6.
Characteristics at bandwidth 40 MHz to 770 MHz
V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
.
Symbol Parameter
G
p
SL
FL
s
11
power gain
slope cable equivalent
input return losses
Conditions
f = 50 MHz
f = 770 MHz
f = 40 MHz to 770 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 770 MHz
s
22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 770 MHz
S21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
d
im
=
60
dB
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 770 MHz
I
tot
[1]
[2]
[3]
Min
21
21.5
0
-
20
18.5
17
15.5
14
20
18.5
17
15.5
14
45
-
-
-
[1]
[2]
Typ
21.5
22.5
1
0.2
33
30
25
22.5
20.5
28.5
27.5
25
22
20
-
Max Unit
22
-
1.5
-
-
-
-
-
-
-
-
-
-
+45
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
flatness of frequency response f = 40 MHz to 770 MHz
0.5
dB
f = 50 MHz
110 channels flat; V
o
= 44 dBmV; measured
at 745.25 MHz
110 channels flat; V
o
= 44 dBmV; measured
at 55.25 MHz
110 channels flat; V
o
= 44 dBmV; measured
at 746.5 MHz
54.5 53
54
52
57.5 53
75
63
4
-
-
-
5
220
63
-
5
5.5
5.5
6
6.5
240
-
61
-
-
-
-
-
total current consumption (DC)
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
Measure according to DIN45004B;
[3]
-
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
6 dB; f
r
= 749.25 MHz; V
r
= V
o
6 dB; measured at f
p
+ f
q
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGY787
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 19 September 2011
4 of 12
NXP Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
Table 7.
Characteristics at bandwidth 40 MHz to 600 MHz
V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
.
Symbol Parameter
G
p
SL
FL
s
11
power gain
slope cable equivalent
input return losses
Conditions
f = 50 MHz
f = 600 MHz
f = 40 MHz to 600 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 600 MHz
s
22
output return losses
f = 40 MHz to 80 MHz;
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 600 MHz
S21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
[1]
[2]
[3]
Min
21
21.5
0
-
20
18.5
17
16
20
18.5
17
16
45
-
-
-
[1]
Typ
21.5
-
-
-
33
30
25
22.5
28.5
27.5
25
22
-
Max Unit
22
-
1.5
-
-
-
-
-
-
-
-
+45
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
flatness of frequency response f = 40 MHz to 600 MHz
0.3
dB
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
85 channels flat; V
o
= 44 dBmV; measured at
595.25 MHz
85 channels flat; V
o
= 44 dBmV; measured at
55.25 MHz
85 channels flat; V
o
= 44 dBmV; measured at
596.5 MHz
d
im
=
60
dB
see
Table 5
[3]
[2]
59.5 58
55.5 53
64
-
-
-
220
56
68
-
-
240
-
62.5
-
-
f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 541.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 596.5 MHz.
Measure according to DIN45004B;
f
p
= 590.25 MHz; V
p
= V
o
; f
q
= 597.25 MHz; V
q
= V
o
6 dB; f
r
= 599.25 MHz; V
r
= V
o
6 dB; measured at f
p
+ f
q
f
r
= 588.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGY787
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 19 September 2011
5 of 12
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