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SMBJ110C-E3/52

产品描述ESD 抑制器/TVS 二极管 600W 110V 10% Bidir
产品类别分立半导体    二极管   
文件大小118KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

SMBJ110C-E3/52概述

ESD 抑制器/TVS 二极管 600W 110V 10% Bidir

SMBJ110C-E3/52规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codeunknown
ECCN代码EAR99
击穿电压标称值135.5 V
最大钳位电压196 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
极性BIDIRECTIONAL
最大重复峰值反向电压110 V
表面贴装YES
Base Number Matches1

文档预览

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• ± 3.5 %: very tight V
BR
tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
SMB (DO-214AA)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
BR
(bi-directional)
V
WM
(uni-directional)
V
WM
(bi-directional)
P
PPM
P
D
at T
M
= 50 °C
P
D
at T
A
= 25 °C
T
J
max.
Polarity
Package
6.5 V to 228 V
6.5 V to 145 V
5.0 V to 188 V
5.0 V to 120 V
600 W
5.0 W
1.0 W
150 °C
Uni-directional, bi-directional
SMB (DO-214AA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
Polarity:
for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current
Power dissipation
with a 10/1000 μs waveform
with a 10/1000 μs waveform
T
M
= 50 °C
T
A
= 25 °C
SYMBOL
P
PPM (1)
I
PPM (1)
P
D (2)
P
D (3)
T
J
, T
STG
VALUE
600
See next table
5.0
1.0
-55 to +150
UNIT
W
A
W
°C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Power dissipation mounted on infinite heatsink
(3)
Power dissipation mounted on minimum recommended pad layout
Revision: 16-Jan-18
Document Number: 87606
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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