BYV74W-400
26 September 2018
Dual ultrafast power diode
Product data sheet
1. General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
•
•
•
•
•
Very low on-state loss
Fast switching
Soft recovery characteristic minimizes power consuming oscillations
High thermal cycling performance
Low thermal resistance
3. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FSM
Parameter
reverse voltage
average forward
current
non-repetitive peak
forward current
Conditions
DC
δ = 0.5 ; T
mb
≤ 104 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
Static characteristics
V
F
forward voltage
I
F
= 15 A; T
j
= 25 °C;
Fig. 6
I
F
= 30 A; T
j
= 25 °C;
Fig. 6
I
F
= 15 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
-
35
60
ns
-
-
-
1.08
1.15
0.95
1.25
1.36
1.12
V
V
V
Min
-
-
-
-
Typ
-
-
-
-
Max
400
15
170
185
Unit
V
A
A
A
WeEn Semiconductors
BYV74W-400
Dual ultrafast power diode
4. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
Simplified outline
Graphic symbol
A1
K
A2
sym125
1
2
3
TO-247 (SOT429)
5. Ordering information
Table 3. Ordering information
Type number
BYV74W-400
Package
Name
TO-247
Description
Version
plastic single-ended through-hole package; heatsink mounted; 1 SOT429
mounting hole; 3 lead TO-247
BYV74W-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
26 September 2018
2 / 11
WeEn Semiconductors
BYV74W-400
Dual ultrafast power diode
6. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
O(AV)
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
average output current
non-repetitive peak
forward current
DC; T
mb
≤ 136 °C
δ = 0.5 ; T
mb
≤ 104 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; T
mb
≤ 94 °C; square-wave
pulse; both diodes conducting
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
T
stg
T
j
30
P
tot
(W)
20
0.2
0.1
10
5
0.5
4.0
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
400
400
400
15
30
170
185
150
150
003aal048
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
003aal047
20
P
tot
(W)
15
2.8
10
2.2
δ=1
a = 1.57
1.9
0
0
5
10
15
20
25
I
F(AV)
(A)
0
0
5
10
I
F(AV)
(A)
15
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.959 V; R
s
= 0.010 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; per diode;
maximum values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.959 V; R
s
= 0.010 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform; per
diode; maximum values
BYV74W-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
26 September 2018
3 / 11
WeEn Semiconductors
BYV74W-400
Dual ultrafast power diode
20
I
F(AV)
(A)
15
104 °C
003aal049
10
4
I
FSM
(A)
10
3
003aal050
10
10
2
5
t
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3. Average forward current as a function of
mounting base temperature; per diode; maximum
values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; per diode;
maximum values
BYV74W-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
26 September 2018
4 / 11
WeEn Semiconductors
BYV74W-400
Dual ultrafast power diode
7. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
with heatsink compound; per diode;
Fig. 5
with heatsink compound; both diodes
conducting
in free air
Min
-
-
-
Typ
-
-
45
Max
2.4
1.4
-
Unit
K/W
K/W
K/W
R
th(j-a)
003aal045
10
-1
δ = 0.5
10
-2
δ = 0.3
δ = 0.1
δ = 0.05
10
-3
δ = 0.02
δ = 0.01
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
1
P
δ=
t
p
T
t
T
t
p
(s)
10
10
-4
10
-6
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width; per diode;
maximum values
BYV74W-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
26 September 2018
5 / 11
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