MUN5333DW1,
NSBC143ZPDXV6,
NSBC143ZPDP6
Complementary Bias
Resistor Transistors
R1 = 4.7 kW, R2 = 47 kW
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PIN CONNECTIONS
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
(2)
R
2
(1)
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B−02
1
33 MG
G
SOT−563
CASE 463A
33 MG
1
SOT−963
CASE 527AD
M
Y
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
MUN5333DW1T1G,
NSVMUN5333DW1T1G*
NSVMUN5333DW1T3G*
NSBC143ZPDXV6T1G
NSVBC143ZPDXV6T1G*
NSVBC143ZPDXV6T5G*
NSBC143ZPDP6T5G
Package
SOT−363
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
10,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
33/Y
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
27
Publication Order Number:
DTC143ZP/D
©
Semiconductor Components Industries, LLC, 2016
June, 2017
−
Rev. 5
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5333DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 19)
T
A
= 25°C
(Note 20)
Derate above 25°C
(Note 19)
(Note 20)
Thermal Resistance,
Junction to Ambient
(Note 19)
(Note 20)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5333DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 21)
Total Device Dissipation
(Note 19)
T
A
= 25°C
(Note 20)
Derate above 25°C
(Note 19)
(Note 20)
Thermal Resistance,
Junction to Ambient
(Note 20)
Thermal Resistance,
Junction to Lead (Note 19)
(Note 20)
Junction and Storage Temperature Range
NSBC143ZPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 19)
T
A
= 25°C
Derate above 25°C
(Note 19)
Thermal Resistance,
Junction to Ambient
(Note 19)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 19)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC143ZPDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 21)
Total Device Dissipation
(Note 19)
T
A
= 25°C
Derate above 25°C
(Note 19)
Thermal Resistance,
Junction to Ambient
(Note 19)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC143ZPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 22)
T
A
= 25°C
(Note 23)
Derate above 25°C
(Note 22)
(Note 23)
Thermal Resistance,
Junction to Ambient
(Note 23)
(Note 22)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC143ZPDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 21)
Total Device Dissipation
(Note 22)
T
A
= 25°C
(Note 23)
Derate above 25°C
(Note 22)
(Note 23)
Thermal Resistance,
Junction to Ambient
(Note 23)
(Note 22)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
19. FR−4 @ Minimum Pad.
20. FR−4 @ 1.0
×
1.0 Inch Pad.
21. Both junction heated values assume total power is sum of two equally powered channels.
22. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
23. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
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28
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 24)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 24)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 24)
(I
C
= 10 mA, I
B
= 1.0 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 5.0 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 5.0 mA) (PNP)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
24. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
80
−
−
−
−
−
−
4.9
3.3
0.08
200
−
0.6
0.67
0.9
0.91
−
−
4.7
0.1
−
0.25
−
−
−
−
0.2
−
6.1
0.14
V
Vdc
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.18
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
V
i(on)
Vdc
V
OL
V
OH
R1
R
1
/R
2
Vdc
Vdc
kW
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 45. Derating Curve
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29
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
TYPICAL CHARACTERISTICS
−
NPN TRANSISTOR
MUN5333DW1, NSBC143ZPDXV6
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
150°C
1000
V
CE
= 10 V
0.1
150°C
−55°C
25°C
1
10
I
C
, COLLECTOR CURRENT (mA)
100
100
25°C
−55°C
0.01
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 46. V
CE(sat)
versus I
C
3.2
2.8
C
ob
, CAPACITANCE (pF)
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
1
0.1
0.01
Figure 47. DC Current Gain
−55°C
25°C
V
O
= 5 V
0
1
2
V
in
, INPUT VOLTAGE (V)
3
4
0.001
V
R
, REVERSE BIAS VOLTAGE (V)
Figure 48. Output Capacitance
Figure 49. Output Current versus Input Voltage
10
V
in
, INPUT VOLTAGE (V)
−55°C
1
150°C
25°C
0.1
0
V
O
= 0.2 V
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 50. Input Voltage versus Output
Current
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30
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
TYPICAL CHARACTERISTICS
−
PNP TRANSISTOR
MUN5333DW1, NSBC143ZPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
75°C
0.1
−25°C
0.01
25°C
h
FE
, DC CURRENT GAIN
1000
75°C
100
−25°C
V
CE
= 10 V
25°C
10
0.001
0
20
40
30
10
I
C
, COLLECTOR CURRENT (mA)
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 51. V
CE(sat)
vs. I
C
Figure 52. DC Current Gain
10
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
9
C
ob
, CAPACITANCE (pF)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
75°C
10
25°C
1
0.1
−25°C
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
0.001
V
R
, REVERSE BIAS VOLTAGE (V)
Figure 53. Output Capacitance
10
Figure 54. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
−25°C
1
75°C
25°C
V
O
= 0.2 V
0.1
0
40
10
20
30
I
C
, COLLECTOR CURRENT (mA)
50
Figure 55. Input Voltage vs. Output Current
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31
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