M
Features
•
•
•
•
•
•
•
•
Single-Supply: 2.7V to 5.5V
Rail-to-Rail Output
Input Range Includes Ground
Gain Bandwidth Product: 2.8 MHz (typ.)
Unity-Gain Stable
Low Quiescent Current: 230 µA/amplifier (typ.)
Chip Select (CS):
MCP603 only
Temperature Ranges:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
• Available in Single, Dual and Quad
MCP601/2/3/4
Description
The Microchip Technology Inc. MCP601/2/3/4 family of
low-power operational amplifiers (op amps) are offered
in single (MCP601), single with Chip Select (CS)
(MCP603), dual (MCP602) and quad (MCP604)
configurations. These op amps utilize an advanced
CMOS technology that provides low bias current, high-
speed operation, high open-loop gain and rail-to-rail
output swing. This product offering operates with a
single supply voltage that can be as low as 2.7V, while
drawing 230 µA (typ.) of quiescent current per
amplifier. In addition, the common mode input voltage
range goes 0.3V below ground, making these
amplifiers ideal for single-supply operation.
These devices are appropriate for low-power, battery-
operated circuits due to the low quiescent current, for
A/D convert driver amplifiers because of their wide
bandwidth or for anti-aliasing filters by virtue of their low
input bias current.
The MCP601, MCP602 and MCP603 are available in
standard 8-lead PDIP, SOIC and TSSOP packages.
The MCP601 and MCP601R are also available in a
standard 5-lead SOT-23 package, while the MCP603 is
available in a standard 6-lead SOT-23 package. The
MCP604 is offered in standard 14-lead PDIP, SOIC and
TSSOP packages.
The MCP601/2/3/4 family is available in the Industrial
and Extended temperature ranges and has a power
supply range of 2.7V to 5.5V.
2.7V to 5.5V Single-Supply CMOS Op Amps
Typical Applications
•
•
•
•
•
•
•
Portable Equipment
A/D Converter Driver
Photo Diode Pre-amp
Analog Filters
Data Acquisition
Notebooks and PDAs
Sensor Interface
Available Tools
• SPICE Macro Models at www.microchip.com
• FilterLab
®
Software at www.microchip.com
Package Types
MCP601
PDIP, SOIC, TSSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP602
PDIP, SOIC, TSSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
MCP603
PDIP, SOIC, TSSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
MCP604
PDIP, SOIC, TSSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
MCP601
SOT23-5
V
OUT
1
V
SS
2
V
IN
+ 3
4 V
IN
–
5 V
DD
V
OUT
1
V
DD
2
V
IN
+ 3
MCP601R
SOT23-5
5 V
SS
4 V
IN
–
V
OUT
1
V
SS
2
V
IN
+ 3
MCP603
SOT23-6
6 V
DD
5 CS
4 V
IN
–
2004 Microchip Technology Inc.
DS21314F-page 1
MCP601/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
V
IN
+, V
INA
+, V
INB
+, V
INC
+, V
IND
+
V
IN
–, V
INA
–, V
INB
–, V
INC
–, V
IND
–
V
DD
V
SS
V
OUT
, V
OUTA
, V
OUTB
, V
OUTC
,
V
OUTD
CS
NC
Function
Non-inverting Inputs
Inverting Inputs
Positive Power Supply
Negative Power Supply
Outputs
Chip Select
No Internal Connection
Absolute Maximum Ratings †
V
DD
- V
SS
.........................................................................7.0V
All inputs and outputs...................... V
SS
- 0.3V to V
DD
+ 0.3V
Difference Input voltage ........................................ |V
DD
- V
SS
|
Output Short Circuit Current...................................continuous
Current at Input Pin .......................................................±2 mA
Current at Output and Supply Pins .............................±30 mA
Storage temperature .....................................-65°C to +150°C
Junction temperature .................................................. +150°C
ESD protection on all pins (HBM; MM)
................ ≥
3 kV; 200V
† Notice:
Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2 and R
L
= 100 kΩ to V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Industrial Temperature
Extended Temperature
Input Offset Temperature Drift
Power Supply Rejection
Input Current and Impedance
Input Bias Current
Industrial Temperature
Extended Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-loop Gain
DC Open-loop Gain (large signal)
Sym
V
OS
V
OS
V
OS
∆V
OS
/∆T
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
A
OL
A
OL
Output
Maximum Output Voltage Swing
Linear Output Voltage Swing
Output Short Circuit Current
Min
-2
-3
-4.5
—
80
—
—
—
—
—
—
V
SS
– 0.3
75
100
95
Typ
±0.7
±1
±1
±2.5
88
1
20
450
±1
10
13
||6
10
13
||3
—
90
115
110
Max
+2
+3
+4.5
—
—
—
60
5000
—
—
—
V
DD
– 1.2
—
—
—
Units
mV
mV
mV
µV/°C
dB
Conditions
T
A
= -40°C to +85°C
(Note 1)
T
A
= -40°C to +125°C
(Note 1)
T
A
= -40°C to +125°C
V
DD
= 2.7V to 5.5V
pA
pA T
A
= +85°C
(Note 1)
pA T
A
= +125°C
(Note 1)
pA
Ω||pF
Ω||pF
V
dB
dB
dB
V
DD
= 5.0V, V
CM
= -0.3V to 3.8V
R
L
= 25 kΩ to V
DD
/2,
V
OUT
= 100 mV to V
DD
– 100 mV
R
L
= 5 kΩ to V
DD
/2,
V
OUT
= 100 mV to V
DD
– 100 mV
R
L
= 25 kΩ to V
DD
/2, Output overdrive = 0.5V
R
L
= 5 kΩ to V
DD
/2, Output overdrive = 0.5V
R
L
= 25 kΩ to V
DD
/2, A
OL
≥
100 dB
R
L
= 5 kΩ to V
DD
/2, A
OL
≥
95 dB
V
DD
= 5.5V
V
DD
= 2.7V
V
OL
, V
OH
V
SS
+ 15
V
OL
, V
OH
V
SS
+ 45
V
OUT
V
SS
+ 100
V
OUT
V
SS
+ 100
I
SC
—
I
SC
—
—
—
—
—
±22
±12
V
DD
– 20
V
DD
– 60
V
DD
– 100
V
DD
– 100
—
—
mV
mV
mV
mV
mA
mA
Power Supply
Supply Voltage
V
DD
2.7
—
5.5
V
Quiescent Current per Amplifier
I
Q
—
230
325
µA
I
O
= 0
Note 1:
These specifications are not tested in either the SOT-23 or TSSOP packages with date codes older than YYWW = 0408.
In these cases, the minimum and maximum values are by design and characterization only.
DS21314F-page 2
2004 Microchip Technology Inc.
MCP601/2/3/4
AC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 50 pF.
Parameters
Frequency Response
Gain Bandwidth Product
Phase Margin
Step Response
Slew Rate
Settling Time (0.01%)
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
e
ni
i
ni
—
—
—
—
7
29
21
0.6
—
—
—
—
µV
P-P
f = 0.1 Hz to 10 Hz
nV/√Hz f = 1 kHz
nV/√Hz f = 10 kHz
fA/√Hz f = 1 kHz
SR
t
settle
—
—
2.3
4.5
—
—
V/µs
µs
G = +1 V/V
G = +1 V/V, 3.8V step
GBWP
PM
—
—
2.8
50
—
—
MHz
°
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
MCP603 CHIP SELECT CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 50 pF.
Parameters
DC Characteristics
CS Logic Threshold, Low
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
Shutdown V
SS
current
Amplifier Output Leakage in Shutdown
CS Threshold Hysteresis
Timing
CS Low to Amplifier Output Turn-on
Time
CS High to Amplifier Output High-Z Time
t
ON
t
OFF
—
—
3.1
100
10
—
µs
ns
CS
≤
0.2V
DD
, G = +1 V/V
CS
≥
0.8V
DD
, G = +1 V/V, No load.
V
IL
I
CSL
V
IH
I
CSH
I
Q_SHDN
I
O_SHDN
HYST
V
SS
-1.0
0.8 V
DD
—
-2.0
—
—
—
—
—
0.7
-0.7
1
0.3
0.2 V
DD
—
V
DD
2.0
—
—
—
V
µA
V
µA
µA
nA
V
Internal switch
CS = V
DD
CS = V
DD
CS = 0.2V
DD
Sym
Min
Typ
Max
Units
Conditions
CS
t
ON
V
OUT
I
DD
I
SS
CS
Current
Hi-Z
2 nA (typ.)
-700 nA (typ.)
t
OFF
Output Active
230 µA (typ.)
-230 µA (typ.)
2 nA (typ.)
Hi-Z
700 nA (typ.)
FIGURE 1-1:
Timing Diagram.
MCP603 Chip Select (CS)
2004 Microchip Technology Inc.
DS21314F-page 3
MCP601/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.7V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT23
Thermal Resistance, 6L-SOT23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-TSSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
—
256
230
85
163
124
70
120
100
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
T
A
-40
-40
-40
-65
—
—
—
—
+85
+125
+125
+150
°C
°C
°C
°C
Industrial temperature parts
Extended temperature parts
Note
Sym
Min
Typ
Max
Units
Conditions
The Industrial temperature parts operate over this extended range, but with reduced performance. The
Extended temperature specs do not apply to Industrial temperature parts. In any case, the internal Junction
temperature (T
J
) must not exceed the absolute maximum specification of 150°C.
DS21314F-page 4
2004 Microchip Technology Inc.
MCP601/2/3/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
R
L
= 100 kΩ to V
DD
/2, V
OUT
≈
V
DD
/2 and C
L
= 50 pF.
120
Open-Loop Gain (dB)
100
80
60
40
20
0
-20
-40
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
0
Quiescent Current per
Amplifier (µA)
Open-Loop Phase (°)
Gain
Phase
-30
-60
-90
-120
-150
-180
-210
0.1
1
10
100
1k
10k 100k 1M 10M
-240
300
250
200
150
100
50
0
I
O
= 0
-40°C
+25°C
+85°C
+125°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Frequency (Hz)
FIGURE 2-1:
Frequency.
3.5
3.0
Slew Rate (V/µs)
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
Open-Loop Gain, Phase vs.
FIGURE 2-4:
Supply Voltage.
300
Quiescent Current per
Amplifier (µA)
250
200
150
100
50
0
Quiescent Current vs.
V
DD
= 5.0V
Falling Edge
I
O
= 0
V
DD
= 5.5V
Rising Edge
V
DD
= 2.7V
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-2:
Slew Rate vs. Temperature.
FIGURE 2-5:
Temperature.
10µ
Input Noise Voltage Density
(V/
√
Hz)
10,000
Quiescent Current vs.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
GBWP
PM, G = +1
-25
0
25
50
75
110
100
90
80
70
60
50
40
30
20
10
0
100 125
Gain Bandwidth Product
(MHz)
Phase Margin, G = +1 (°)
1µ
1,000
100n
100
10n
0.1
10
1.E-01
1.E+00
1
10
1.E+01
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
1M
1.E+06
Ambient Temperature (°C)
Frequency (Hz)
FIGURE 2-3:
Gain Bandwidth Product,
Phase Margin vs. Temperature.
FIGURE 2-6:
vs. Frequency.
Input Noise Voltage Density
2004 Microchip Technology Inc.
DS21314F-page 5
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