Preliminary
Datasheet
RJH60T04DPQ-A1
600V - 30A - IGBT
Application:Current resonance circuit
Features
•
Optimized for current resonance application
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.5 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
•
Built in fast recovery diode in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 45 ns typ. (at V
CC
= 400 V, V
GE
= 15 V , I
C
= 30 A, Rg = 10
Ω,
Ta = 25°C, Inductive load)
•
Low tail loss
E
tail
= 160
μJ
typ. (at V
CC
= 300 V, V
GE
= 20 V, I
C
= 50 A, Rg = 15
Ω,
Tc = 125°C, current resonance circuit)
R07DS1191EJ0200
Rev.2.00
Apr 02, 2014
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤
5
μs,
duty cycle
≤
1%
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
I
C
(peak)
Note1
I
DF
(peak)
Note2
P
C
θj-c
θj-cd
Tj
Tstg
Ratings
600
±30
60
30
180
80
208.3
0.6
2.1
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Page 1 of 7
RJH60T04DPQ-A1
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Tail loss
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
tail
Min
⎯
⎯
4
⎯
—
—
—
—
—
—
⎯
—
—
—
—
Typ
⎯
⎯
⎯
1.50
1910
69
34
87
18
41
54
52
136
45
160
Max
100
±1
8
1.95
—
—
—
—
—
—
⎯
—
—
—
—
Unit
μA
μA
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
μJ
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 30 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 30 A
V
CC
= 400 V
V
GE
= 15 V
I
C
= 30 A, Rg = 10
Ω
Inductive load
V
CC
= 300 V, V
GE
= 20 V
I
C
= 50 A, Rg = 15
Ω
Tc = 125°C
Current resonance circuit
I
F
= 20 A
Note3
I
F
= 10 A
di
F
/dt =
−100
A/μs
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
V
ECF
t
rr
⎯
⎯
1.2
100
1.6
⎯
V
ns
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Page 2 of 7
RJH60T04DPQ-A1
Preliminary
Main Characteristics
Maximum DC
Collector Current
vs.
Case
Temperature
80
1000
Maximum
Safe Operation Area
Collector Current
I
C
(A)
60
Collector Current
I
C
(A)
PW
=
10
μs
100
40
10
20
1
Ta =
25
°
C
1
shot pulse
1
10
100
1000
0
0
25
50
75
100 125 150 175
0.1
Case
Temperature Tc
(°C)
Collector to
Emitter Voltage V
CE
(V)
Typical
Output Characteristics
120
Ta =
25
°
C
Pulse
Test
13
V
80
60
40
20
0
0
1
2
3
4
5
V
GE
= 9 V
15
V
10
V
120
11
V
Typical
Output Characteristics
Ta =
150
°
C
Pulse
Test
13
V
15
V
10
V
11
V
Collector Current
I
C
(A)
100
Collector Current
I
C
(A)
100
80
60
40
20
0
0
V
GE
= 9 V
1
2
3
4
5
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter
Satularion
Voltage vs.
Gate to
Emitter Voltage
(Typical)
4
Ta =
25
°
C
Pulse
Test
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter
Satularion
Voltage vs.
Gate to
Emitter Voltage
(Typical)
4
Ta =
150
°
C
Pulse
Test
Collector to
Emitter
Satularion
Voltage
V
CE(sat)
(V)
3
Collector to
Emitter
Satularion
Voltage
V
CE(sat)
(V)
3
I
C
= 60
A
2
I
C
= 60
A
30 A
15 A
2
30 A
15 A
1
8
12
16
20
1
8
12
16
20
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter Voltage V
GE
(V)
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Page 3 of 7
RJH60T04DPQ-A1
Preliminary
Collector to
Emitter
Saturation
Voltage
vs.
Case
Temparature
(Typical)
Transfer
Characteristics (Typical)
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
120
3.5
3.0
2.5
2.0
1.5
1.0
0.5
−25
V
GE
=
15
V
Pulse
Test
I
C
= 60
A
30 A
15 A
Collector Current
I
C
(A)
100
80
60
40
20
0
V
CE
=
10
V
Pulse
Test
Ta =
150
°
C
25
°
C
4
6
8
10
12
14
0
25
50
75
100 125 150
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter
Cutoff
Voltage
vs.
Case
Temparature
(Typical)
10
Case
Temparature Tc
(
°
C)
Gate to
Emitter
Cutoff
Voltage V
GE(off)
(V)
Forward
Current
vs. Forward Voltage
(Typical)
100
Diode Forward
Current
I
F
(A)
8
I
C
=
10 mA
80
Ta =
25
°
C
150
°
C
6
1 mA
4
60
40
2
V
CE
=
10
V
Pulse
Test
0
−25
0
25
50
75
100 125 150
20
V
GE
=
0
V
Pulse
Test
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Case
Temparature Tc
(
°
C)
C-E
Diode Forward Voltage V
CEF
(V)
Typical
Capacitance
vs.
Collector to
Emitter Voltage
10000
Cies
Dynamic Input
Characteristics (Typical)
Collector to
Emitter Voltage V
CE
(V)
Capacitance C (pF)
1000
600
V
CE
400
V
CC
= 480 V
300
V
120
V
12
100
Coes
10
V
GE
=
0
V
f =
1
MHz
Ta =
25
°
C
0
50
100
150
200
8
Cres
200
V
CC
= 480 V
300
V
120
V
0
20
40
60
4
I
C
=
30 A
Ta =
25
°
C
80
0
100
1
250
300
0
Collector to
Emitter Voltage V
CE
(V)
Gate Charge
Qg
(μC)
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Page 4 of 7
Gate to
Emitter Voltage V
GE
(V)
800
V
GE
16
RJH60T04DPQ-A1
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
Swithing
Energy Losses E
(mJ)
10
Switching
Times
t (ns)
100
td(off)
t
f
td(on)
1
Eon
Eoff
0.1
10
tr
V
CC
= 400 V, V
GE
=
15
V
Rg
=
10
Ω,
Ta =
150
°
C
1
10
100
1
0.01
1
V
CC
= 400 V, V
GE
=
15
V
Rg
=
10
Ω,
Ta =
150
°
C
10
100
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (3)
1000
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (4)
Swithing
Energy Losses E
(mJ)
10
V
CC
= 400 V, V
GE
=
15
V
I
C
=
30 A,
Tc =
150
°
C
Switching
Times
t (ns)
V
CC
= 400 V, V
GE
=
15
V
I
C
=
30 A,
Tc =
150
°
C
100
td(off)
t
f
td(on)
tr
Eon
1
Eoff
10
1
10
100
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive
load)
Gate Registance Rg (Ω)
(Inductive
load)
Switching Characteristics (Typical) (6)
Swithing
Energy Losses E
(mJ)
10
V
CC
= 400 V, V
GE
=
15
V
I
C
=
30 A, Rg
=
10
Ω
Switching Characteristics (Typical) (5)
1000
V
CC
= 400 V, V
GE
=
15
V
I
C
=
30 A, Rg
=
10
Ω
Switching
Times
t (ns)
td(off)
100
t
f
td(on)
tr
1
Eon
Eoff
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Case
Temperature Tc
(°C)
(Inductive
load)
Case
Temperature Tc
(°C)
(Inductive
load)
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Page 5 of 7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
