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reserved
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NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and amplification
•
Telephony and professional communication equipment.
DESCRIPTION
NPN switching transistor in an SC-70 (SOT323) plastic
package. PNP complement: PMSS3906.
PINNING
PIN
1
2
3
base
emitter
collector
PMSS3904
DESCRIPTION
handbook, halfpage
3
3
1
MARKING CODE
TYPE NUMBER
PMSS3904
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
Simplified outline (SC-70; SOT323)
and symbol.
MARKING CODE
(1)
∗04
2
1
Top view
2
MAM062
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
40
6
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 May 27
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 1 V; see Fig.2
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA; note 1
I
C
= 100 mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 100
μA;
V
CE
= 5 V; R
S
= 1 kΩ
f = 10 Hz to 15.7 KHz
40
70
100
60
30
−
−
650
−
−
−
180
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMSS3904
VALUE
625
UNIT
K/W
MAX.
50
10
50
−
−
300
−
−
200
300
850
950
4
12
−
5
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−
1 mA; V
CC
= 3 V;
V
BB
=
−1.9
V
−
−
−
−
−
−
110
50
60
1200
1000
200
ns
ns
ns
ns
ns
ns
1999 May 27
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC gain current; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 500
μs;
t
p
= 10
μs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1999 May 27
4
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