BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Rev. 3 — 3 December 2010
Product data sheet
1. Product profile
1.1 General description
The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount
package. It delivers 28 dBm output power at 1 dB gain compression and a superior
performance up to 2700 MHz. Its power saving features include simple quiescent current
adjustment, which allows class-AB operation and logic-level shutdown control to reduce
the supply current to 4
μA.
1.2 Features and benefits
400 MHz to 2700 MHz frequency operating range
12 dB small signal gain at 2 GHz
28 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
All pins ESD protected
1.3 Applications
Broadband CPE/MoCA
WLAN/ISM/RFID
Wireless infrastructure (base station,
repeater, backhaul systems)
Industrial applications
E-metering
Satellite Master Antenna TV (SMATV)
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50
Ω
, SHDN = HIGH (shutdown disabled). Typical values
at V
CC
= 5 V; I
CC
= 180 mA; T
case
= 25
°
C; unless otherwise specified.
Symbol Parameter
f
G
p
P
L(1dB)
IP3
O
[1]
[2]
Conditions
[1]
Min
400
Typ
-
Max
Unit
dB
dBm
dBm
frequency
power gain
output power at 1 dB gain compression
output third-order intercept point
f = 2140 MHz
f = 2140 MHz
f = 2140 MHz
2700 MHz
10.5 12.0 13.5
26.5 28.0 -
[2]
39.0 42.0 -
Operation outside this range is possible but not guaranteed.
P
L
= 17 dBm per tone; spacing = 1 MHz.
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
2. Pinning information
2.1 Pinning
terminal 1
index area
n.c.
V
CC(RF)
V
CC(RF)
n.c.
1
2
8
7
ICQ_ADJ
RF_IN
SHDN
V
CC(BIAS)
BGA7127
3
4
GND PAD
6
5
001aam036
Transparent top view
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
n.c.
V
CC(RF)
V
CC(BIAS)
SHDN
RF_IN
ICQ_ADJ
GND
[1]
[2]
[3]
Pin description
Pin
1, 4
2, 3
5
6
7
8
GND pad
Description
not connected
RF output for the power amplifier and DC supply input for the
RF transistor collector
[1]
bias supply voltage
[2]
shutdown control function enabled / disabled
RF input for the power amplifier
[1]
quiescent collector current adjustment by an external resistor
RF ground and DC ground
[3]
This pin is DC-coupled and requires an external DC-blocking capacitor.
RF decoupled.
The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Name
BGA7127
HVSON8
Description
plastic thermal enhanced very thin small outline
package; no leads; 8 terminals; body 3
×
3
×
0.85 mm
Version
SOT908-1
Type number Package
BGA7127
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 December 2010
2 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
4. Functional diagram
V
CC
V
CC(BIAS)
5
ICQ_ADJ
8
R2
SHDN 6
BIAS
ENABLE
BANDGAP
V/I
CONVERTER
R1
INPUT MATCH
RF_IN 7
2, 3 V
CC(RF)
RF_OUT
OUTPUT MATCH
GND
014aab047
Fig 2.
Functional diagram
5. Shutdown control
Table 4.
Mode
Idle
TX
Shutdown control settings
Mode description
medium power MMIC fully off;
minimal supply current
Function description
shutdown control enabled
SHDN
0
1
V
ctrl(sd)
(V)
Min
0
2.5
Max
0.7
I
ctrl(sd)
(μA)
Min
-
Max
2
3
medium power MMIC transmit mode shutdown control disabled
V
CC(BIAS)
-
BGA7127
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 December 2010
3 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
6. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC(RF)
V
CC(BIAS)
I
CC
V
ctrl(sd)
P
i(RF)
T
case
T
j
V
ESD
Parameter
RF supply voltage
bias supply voltage
supply current
shutdown control voltage
RF input power
case temperature
junction temperature
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
Charged Device Model (CDM);
According JEDEC standard 22-C101B
[1]
[2]
[3]
See
Figure 3
for safe operating area.
The supply current is adjustable. See
Section 8.1 “Supply current adjustment”
and
Section 12 “Application information”.
If V
ctrl(sd)
exceeds V
CC(BIAS)
, the internal ESD circuit can be damaged.
The recommended preventive measure is to limit the I
ctrl(sd)
to 20 mA.
If the SHDN function is not used, the SHDN pin should be connected to V
CC(BIAS)
.
[4]
Withstands switching between zero and maximum P
i(RF)
.
Conditions
[1]
[1]
[1][2]
[3]
Min
-
-
-
0.0
-
−40
-
-
-
Max
6.0
6.0
325
25
+85
150
2000
500
Unit
V
V
mA
dBm
°C
°C
V
V
V
CC(BIAS)
V
f = 2140 MHz; switched
[4]
350
I
CC
(mA)
300
001aal536
250
200
150
100
2
3
4
5
6
7
V
CC(RF)
(V)
Exceeding the safe operating area limits may cause serious damage to the product.
The impact on I
CC
due to the spread of the external ICQ resistor (R2) should be taken into account.
The product-spread on I
CC
should be taken into account (See
Section 8 “Static characteristics”).
Fig 3.
BGA7127 DC safe operating area
BGA7127
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 December 2010
4 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
7. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
T
case
= 85
°C;
V
CC
= 5 V;
I
CC
= 180 mA
[1]
Typ Max Unit
28
-
K/W
Defined as thermal resistance from junction to GND pad.
8. Static characteristics
Table 7.
Static characteristics
Input and output impedances matched to 50
Ω
, SHDN = HIGH (shutdown disabled). Typical values
at V
CC
= 5.0 V; T
case
= 25
°
C; unless otherwise specified.
Symbol Parameter
I
CC
supply current
R1 = 1
Ω;
R2 = 909
Ω,
E96
R1 = 1.8
Ω;
R2 = 909
Ω,
E96
during shutdown; pin SHDN = LOW
(shutdown enabled)
[1]
[2]
Conditions
[1]
[2]
[2]
Min
100
160
160
-
Typ
-
180
180
4
Max
250
200
200
6
Unit
mA
mA
mA
μA
The supply current is adjustable. See
Section 8.1 “Supply current adjustment”
and
Section 12 “Application
information”.
See
Section 12 “Application information”.
8.1 Supply current adjustment
The supply current can be adjusted by changing the value of external ICQ resistor (R2).
250
I
CC
(mA)
200
001aal537
150
100
650
850
1050
1250
1450
1650
R2 (Ω)
R1 = 1
Ω.
Fig 4.
Supply current as a function of the value of R2 at a supply voltage of 5 V.
BGA7127
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 December 2010
5 of 25
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