PMBT3906MB
2 February 2018
40 V, 200 mA PNP switching transistor
Product data sheet
1. General description
PNP single switching transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted
Device (SMD) plastic package.
NPN complement: PMBT3904MB.
2. Features and benefits
•
•
•
•
•
Single general-purpose switching transistor
AEC-Q101 qualified
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
3. Applications
•
•
General-purpose switching and amplification
Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
V
CEO
I
C
h
FE
Parameter
collector-emitter
voltage
collector current
DC current gain
V
CE
= -1 V; I
C
= -10 mA
Conditions
open base
Min
-
-
100
Typ
-
-
180
Max
-40
-200
300
Unit
V
mA
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
B
E
C
base
emitter
collector
Simplified outline
1
3
2
Transparent
top view
1
2
sym013
Graphic symbol
3
DFN1006B-3 (SOT883B)
Nexperia
PMBT3906MB
40 V, 200 mA PNP switching transistor
6. Ordering information
Table 3. Ordering information
Type number
PMBT3906MB
Package
Name
DFN1006B-3
Description
Version
plastic, leadless ultra small plastic package; 3 solder lands; 0.35 SOT883B
mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body
7. Marking
Table 4. Marking codes
Type number
PMBT3906MB
PIN 1 INDICATION
Marking code
0100 1000
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PMBT3906MB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
2 February 2018
2 / 11
Nexperia
PMBT3906MB
40 V, 200 mA PNP switching transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse; t
p
≤ 1 ms
T
amb
≤ 25 °C
[1] [2]
[1] [3]
Min
-
-
-
-
-
-
-
-
-
-55
-65
Max
-40
-40
-6
-200
-200
-100
250
590
150
150
150
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1] [2]
[1] [3]
Min
-
-
Typ
-
-
Max
500
212
Unit
K/W
K/W
[1]
[2]
[3]
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
PMBT3906MB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
2 February 2018
3 / 11
Nexperia
PMBT3906MB
40 V, 200 mA PNP switching transistor
10
3
Z
th(j-a)
(K/W)
10
2
006aab603
duty cycle =
1
0.5
0.2
0.1
0.05
0.02
0.75
0.33
10
0.01
0
1
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMBT3906MB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
2 February 2018
4 / 11
Nexperia
PMBT3906MB
40 V, 200 mA PNP switching transistor
10. Characteristics
Table 7. Characteristics
T
amb
= 25 °C unless otherwise specified
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= -30 V; I
E
= 0 A
V
EB
= -6 V; I
C
= 0 A
V
CE
= -1 V; I
C
= -0.1 mA
V
CE
= -1 V; I
C
= -1 mA
V
CE
= -1 V; I
C
= -10 mA
V
CE
= -1 V; I
C
= -50 mA
V
CE
= -1 V; I
C
= -100 mA; pulsed; t
p
≤
300 µs; δ ≤ 0.02
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
C
c
C
e
f
T
NF
collector-emitter
saturation voltage
I
C
= -10 mA; I
B
= -1 mA
I
C
= -50 mA; I
B
= -5 mA
Min
-
-
60
80
100
60
30
-
-
-
-
-
-
-
-
-
-
V
CB
= -5 V; I
E
= 0 A; i
e
= 0 A; f = 1 MHz
V
EB
= -500 mV; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz
V
CE
= -20 V; I
C
= -10 mA; f = 100 MHz
V
CE
= -5 V; I
C
= -100 µA; R
S
= 1 kΩ;
10 Hz ≤ f ≤ 15700 Hz
-
-
250
-
Typ
-
-
180
180
180
130
50
-100
-165
-750
-850
-
-
-
-
-
-
-
-
-
-
Max
-50
-50
-
-
300
-
-
-250
-400
-850
-950
35
35
70
225
75
300
4.5
10
-
4
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
pF
pF
MHz
dB
Unit
nA
nA
base-emitter saturation I
C
= -10 mA; I
B
= -1 mA
voltage
I
C
= -50 mA; I
B
= -5 mA
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= -10 mA; I
Bon
= -1 mA; I
Boff
= 1 mA;
V
CC
= -3 V
PMBT3906MB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
2 February 2018
5 / 11
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