Freescale Semiconductor
Technical Data
Document Number: MRF24300N
Rev. 0, 5/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 300 W CW transistor is designed for industrial, scientific, medical (ISM)
applications at 2450 MHz. This device is suitable for use in CW, pulse and
linear applications. This high gain, high efficiency device is targeted to replace
industrial magnetrons and will provide longer life and ease of use.
Typical Performance:
In 2400–2500 MHz reference circuit, V
DD
= 32 Vdc
Frequency
(MHz)
2450
Signal Type
CW
P
in
(W)
15.9
G
ps
(dB)
13.1
η
D
(%)
60.5
P
out
(W)
320
MRF24300N
2450 MHz, 300 W CW, 32 V
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
2450
(1)
Signal Type
CW
VSWR
> 5:1
at all Phase
Angles
P
in
(W)
15.0
(2 dB
Overdrive)
Test
Voltage
32
Result
No Device
Degradation
OM-
-780-
-2L
PLASTIC
1. Measured in 2450 MHz reference circuit.
Features
•
•
•
•
•
Characterized with series equivalent large--signal impedance parameters
Internally matched for ease of use
Qualified for operation at 32 Vdc
Integrated ESD protection
Low thermal resistance
Gate 2
1 Drain
Target Applications
•
Industrial heating:
– Sterilization
– Pasteurization
•
•
•
•
•
•
•
•
Industrial drying
Moisture--leveling process
Curing
Welding
Heat sealing
Microwave ablation
Renal denervation
Diathermy
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2016. All rights reserved.
MRF24300N
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
–0.5, +65
–6.0, +10
32, +0
– 65 to +150
–40 to +150
–40 to +225
833
4.17
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 89°C, 300 W CW, 32 Vdc, I
DQ
= 100 mA, 2450 MHz
Symbol
R
θJC
Value
(2,3)
0.24
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
B, passes 250 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 303
μAdc)
Gate Quiescent Voltage
(V
DD
= 32 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.7 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.6
—
—
2.0
2.5
0.15
2.4
—
0.17
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at
http://www.nxp.com/RF/calculators.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
MRF24300N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Production Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQ
= 100 mA, P
in
= 10 W Peak (1 W Avg.),
f = 2450 MHz, 100
μsec
Pulse Width, 10% Duty Cycle
Output Power
Drain Efficiency
Input Return Loss
P
out
η
D
IRL
260
52.0
—
291
56.9
–18
330
—
–9
W
%
dB
Table 6. Ordering Information
Device
MRF24300NR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
OM--780--2L
Package
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
10
8
V
DD
= 32 Vdc
10
7
MTTF (HOURS)
I
D
= 12.39 Amps
10
6
15.21 Amps
17.19 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http:/www.nxp.com/RF/calculators.
Figure 2. MTTF versus Junction Temperature - CW
-
MRF24300N
4
RF Device Data
Freescale Semiconductor, Inc.
2400–2500 MHz REFERENCE CIRCUIT — 2″
×
3″ (5.1 cm
×
7.6 cm)
Table 7. 2450 MHz Performance
(In Freescale 2400–2500 MHz Reference Circuit, 50 ohm system)
V
DD
= 32 Vdc, I
DQ
= 100 mA, T
A
= 25°C
Frequency
(MHz)
2450
Signal Type
CW
P
in
(W)
15.9
G
ps
(dB)
13.1
η
D
(%)
60.5
P
out
(W)
320
Table 8. Load Mismatch/Ruggedness
(In Freescale Reference Circuit)
Frequency
(MHz)
2450
Signal
Type
CW
VSWR
> 5:1 at all
Phase Angles
P
in
(W)
15.0
(2 dB Overdrive)
Test Voltage, V
DD
32
Result
No Device
Degradation
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
5
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