BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated pellet chip junction
Available
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
E
R
T
J
max.
Package
Circuit configuration
1.5 A
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
30 A
1.0 μA
1.15 V
20 mJ
150 °C
SMA (DO-214AC)
Single
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals:
matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
I
(BR)R
= 0.4 A, T
J
= 25 °C (for BYG10Y)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
SYMBOL
BYG10D
BYG10D
200
BYG10G
BYG10G
400
BYG10J
BYG10J
600
1.5
30
BYG10K
BYG10K
800
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
V
A
A
UNIT
E
R
T
J
, T
STG
20
-55 to +150
mJ
°C
Revision: 15-May-2018
Document Number: 88957
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
SYMBOL
V
F
BYG10D
BYG10G
BYG10J
BYG10K
1.1
BYG10M
BYG10Y
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
(1)
Maximum DC
reverse current
Maximum reverse
recovery time
TEST CONDITIONS
I
F
= 1 A
I
F
= 1.5 A
V
R
= V
RRM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
1.15
1
10
4
I
R
t
rr
μA
μs
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
SYMBOL
R
JL
R
JA
(1)
Typical thermal resistance, junction to ambient
R
JA
(2)
R
JA
(3)
Notes
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al O ), 50 mm
2
35 μm Cu
2 3
(1)
BYG10D
BYG10G
BYG10J
25
BYG10K
BYG10M
BYG10Y
UNIT
°C/W
150
125
100
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYG10M-E3/TR
BYG10M-E3/TR3
BYG10MHE3_A/H
(1)
BYG10MHE3_A/I
(1)
BYG10M-M3/TR
BYG10M-M3/TR3
BYG10MHM3_A/H
(1)
BYG10MHM3_A/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
H
I
TR
TR3
H
I
BASE QUANTITY
1800
7500
1800
7500
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 15-May-2018
Document Number: 88957
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
400
Reverse Power Dissipation (mW)
350
300
250
200
150
100
50
0
V
R
= V
RRM
P
R
- Limit at 100 % V
R
10
Forward Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.1
P
R
- Limit at 80 % V
R
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
Forward Voltage (V)
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
R
θJA
≤
125 K/W
R
θJA
≤
150 K/W
V
R
= V
RRM
Half Sine-Wave
R
θJA
≤
25 K/W
30
f = 1 MHz
25
Average Forward Current (A)
Diode Capacitance (pF)
20
15
10
5
0
0.1
1
10
100
Ambient Temperature (°C)
Reverse Voltage (V)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
5000
T
A
= 125 °C
Reverse Recovery Time (ns)
4000
T
A
= 100 °C
3000
T
A
= 75 °C
2000
T
A
= 50 °C
T
A
= 25 °C
1000
I
R
= 0.5 A, i
R
= 0.125 A
Reverse Current (µA)
100
10
1
25
50
75
100
125
150
0
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Reverse Recovery Time vs. Forward Current
Revision: 15-May-2018
Document Number: 88957
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
2000
Reverse Recovery Charge (nC)
T
A
= 125 °C
1600
T
A
= 100 °C
1200
T
A
= 75 °C
T
A
= 50 °C
800
T
A
= 25 °C
400
I
R
= 0.5 A, i
R
= 0.125 A
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMA
(DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 15-May-2018
Document Number: 88957
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
