........................................................................................................ -0.6V to Vcc + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
1.1
AC Test Conditions
V
LO
= 2.0V
V
HI
= Vcc - 0.2V
V
HI
= 4.0V for
(Note 1)
(Note 2)
AC Waveform:
Timing Measurement Reference Level
Input
Output
0.5 V
CC
0.5 V
CC
Note 1:
For V
CC
≤
4.0V
2:
For V
CC
> 4.0V
DS21131E-page 2
Preliminary
2004 Microchip Technology Inc.
93LC76/86
TABLE 1-1:
DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= +2.5V to +6.0V
Commercial (C): T
A
= 0°C to +70°C
Industrial
(I): T
A
= -40°C to +85°C
Symbol
V
IH1
V
IH2
V
IL1
V
IL2
V
OL1
V
OL2
V
OH1
V
OH2
I
LI
I
LO
C
INT
I
CC
write
I
CC
read
I
CCS
Min.
2.0
0.7 V
CC
-0.3
-0.3
—
—
2.4
V
CC
-0.2
-10
-10
—
—
—
—
Max.
V
CC
+ 1
V
CC
+ 1
0.8
0.2 V
CC
0.4
0.2
—
—
10
10
7
3
1
500
100
30
Units
V
V
V
V
V
V
V
V
µA
µA
pF
mA
mA
µA
µA
µA
Conditions
V
CC
≥
2.7V
V
CC
< 2.7V
V
CC
≥
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA; V
CC
= 4.5V
I
OL
=100
µA;
V
CC
= V
CC
Min.
I
OH
= -400
µA;
V
CC
= 4.5V
I
OH
= -100
µA;
V
CC
= V
CC
Min.
V
IN
= 0.1V to V
CC
V
OUT
= 0.1V to V
CC
(Note 1)
T
A
= +25°C, F
CLK
= 1 MHz
V
CC
= 5.5V
F
CLK
= 3 MHz; V
CC
= 5.5V
F
CLK
= 1 MHz; V
CC
= 3.0V
CLK = CS = 0V; V
CC
= 5.5V
CLK = CS = 0V; V
CC
= 3.0V
DI = PE = V
SS
ORG = V
SS
or V
CC
DC CHARACTERISTICS
Parameter
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Operating current
Standby current
Note 1:
This parameter is periodically sampled and not 100% tested.
2004 Microchip Technology Inc.
Preliminary
DS21131E-page 3
93LC76/86
TABLE 1-2:
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= +2.5V to +6.0V
Commercial (C): T
A
= 0°C to +70°C
Industrial
(I): T
A
= -40°C to +85°C
Symbol
F
CLK
T
CKH
T
CKL
T
CSS
T
CSH
T
CSL
T
DIS
T
DIH
T
PD
T
CZ
Tsv
T
WC
T
EC
T
WL
—
Min.
—
200
300
100
200
50
100
0
250
50
100
50
100
—
—
—
—
—
—
1M
Max.
3
2
—
—
—
—
—
—
—
100
250
100
500
200
300
5
15
30
—
Units
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
cycles
Conditions
4.5V
≤
V
CC
≤
6.0V
2.5V
≤
V
CC
<
4.5V
4.5V
≤
V
CC
≤
6.0V
2.5V
≤
V
CC
<
4.5V
4.5V
≥
V
CC
≤
6.0V
2.5V
≤
V
CC
<
4.5V
4.5V
≤
V
CC
≤
6.0V, Relative to CLK
2.5V
≤
V
CC
<
4.5V, Relative to CLK
—
Relative to CLK
4.5V
≤
V
CC
≤
6.0V, Relative to CLK
2.5V
≤
V
CC
<4.5V, Relative to CLK
4.5V
≤
V
CC
≤
6.0V, Relative to CLK
2.5V
≤
V
CC
<
4.5V, Relative to CLK
4.5V
≤
V
CC
≤
6.0V, C
L
= 100 pF
2.5V
≤
V
CC
< 4.5V, C
L
= 100 pF
4.5V
≤
V
CC
≤
6.0V
2.5V
≤
V
CC
< 4.5V
(Note 1)
4.5V
≥
V
CC
≤
6.0V, C
L
= 100 pF
2.5V
≤
V
CC
<4.5V, C
L
= 100 pF
Erase/Write mode
ERAL mode
WRAL mode
25°C, Vcc = 5.0V, Block mode
(Note 2)
AC CHARACTERISTICS
Parameter
Clock frequency
Clock high time
Clock low time
Chip select setup time
Chip select hold time
Chip select low time
Data input setup time
Data input hold time
Data output delay time
Data output disable time
Status valid time
Program cycle time
Endurance
Note 1:
2:
This parameter is periodically sampled and not 100% tested.
This parameter is not tested but ensured by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site at
www.microchip.com.
DS21131E-page 4
Preliminary
2004 Microchip Technology Inc.
93LC76/86
TABLE 1-3:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93LC76: ORG=1 (1X16 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
X A8 A7 A6 A5 A4 A3
1 1 X X X X X
X A8 A7 A6 A5 A4 A3
1 0 X X X X X
X A8 A7 A6 A5 A4 A3
0 1 X X X X X
0 0 X X X X X
A2
X
A2
X
A2
X
X
A1
X
A1
X
A1
X
X
Data In
A0
—
X
—
A0
—
X
—
A0 D15 - D0
X D15 - D0
X
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
29
13
13
13
29
29
13
TABLE 1-4:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93LC76: ORG=0 (X8 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
X A9 A8 A7 A6 A5 A4
1 1 X X X X X
X A9 A8 A7 A6 A5 A4
1 0 X X X X X
X A9 A8 A7 A6 A5 A4
0 1 X X X X X
0 0 X X X X X
A3
X
A3
X
A3
X
X
A2
X
A2
X
A2
X
X
A1 A0
X
A1 A0
X
A1 A0
X
X
Data In
—
—
—
—
D7 - D0
D7 - D0
—
Data Out
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
22
14
14
14
22
22
14
TABLE 1-5:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93LC86: ORG=1 (X16 ORGANIZATION)
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
A9 A8 A7 A6 A5 A4 A3
1 1 X X X X X
A9 A8 A7 A6 A5 A4 A3
1 0 X X X X X
A9 A8 A7 A6 A5 A4 A3
0 1 X X X X X
0 0 X X X X X
A2
X
A2
X
A2
X
X
A1
X
A1
X
A1
X
X
Data In
A0
—
X
—
A0
—
X
—
A0 D15 - D0
X D15 - D0
X
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
29
13
13
13
29
29
13
TABLE 1-6:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93LC86: ORG=0 (X8 ORGANIZATION)
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
