BGU7003
Wideband silicon germanium low-noise amplifier MMIC
Rev. 02 — 22 June 2010
Product data sheet
1. Product profile
1.1 General description
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
Noise figure NF = 0.80 dB at 1.575 GHz
Insertion power gain = 18.3 dB at 1.575 GHz
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1
μA
Optimized performance at low 5 mA supply current
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
GPS
Satellite radio
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C; V
CC
= 2.5 V; I
CC(tot)
= 5.0 mA; V
ENABLE
≥
0.7 V; f = 1575 MHz; Z
S
= Z
L
= 50
Ω
(input and output matched to
50
Ω
) unless otherwise specified.
Symbol
V
CC
I
CC(tot)
T
amb
P
tot
|s
21
|
2
NF
P
i(1dB)
IP3
I
Parameter
supply voltage
total supply current
ambient temperature
total power dissipation
Insertion power gain
noise figure
input power at 1 dB gain compression
input third-order intercept point
jammers at f
1
= f + 138 MHz and
f
2
= f + 276 MHz
T
sp
≤
103
°C
[2]
Conditions
RF input AC coupled
configurable with external resistor
[1]
Min Typ
2.2
3
−40
-
-
-
-
-
-
-
+25
-
18.3
0.80
−20.1
−0.2
Max Unit
2.85 V
15
+85
70
-
-
-
-
mA
°C
mW
dB
dB
dBm
dBm
[1]
[2]
I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
T
sp
is the temperature at the solder point of the ground lead.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
R_BIAS
RF_IN
GND
RF_OUT
ENABLE
V
CC
6
5
4
bottom view
1
3
sym128
Simplified outline
1
2
3
Graphic symbol
5
6
2
4
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU7003
XSON6
Description
Version
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
Type number
4. Marking
Table 4.
BGU7003
Marking codes
Marking code
B3
Type number
BGU7003
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 22 June 2010
2 of 18
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
I
CC(tot)
P
tot
T
stg
T
j
[1]
Parameter
supply voltage
total supply current
total power dissipation
storage temperature
junction temperature
Conditions
RF input AC coupled
configurable with external resistor
T
sp
≤
103
°C
[1]
Min Max
-
-
-
−65
-
3.0
25
70
+150
150
Unit
V
mA
mW
°C
°C
T
sp
is the temperature at the solder point of the ground lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
235
Unit
K/W
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C; V
CC
= 2.5 V; I
CC(tot)
= 5.0 mA; V
ENABLE
≥
0.7 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
V
CC
I
CC(tot)
T
amb
|s
21
|
2
supply voltage
total supply current
ambient temperature
insertion power gain
T
amb
= 25
°C
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
−40 °C ≤
T
amb
≤
85
°C
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
MSG
maximum stable gain
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
NF
min
minimum noise figure
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
[1]
[2]
BGU7003
Conditions
RF input AC coupled
configurable with external resistor
V
ENABLE
≤
0.4 V
[1]
[1]
Min Typ
2.2
3
-
−40
-
-
-
+25
Max
2.85
15
+85
Unit
V
mA
°C
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
0.001 mA
16.0 17.5 -
[2]
[2]
14.0 15.2 -
10.0 11.4 -
15.0 17.5 -
13.0 15.2 -
9.0
-
-
-
-
-
-
11.4 -
20.5 -
17.8 -
15.4 -
0.70 -
0.80 -
1.5
-
[2]
[2]
[2]
I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
Guaranteed by design and characterization.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 22 June 2010
3 of 18
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
Table 8.
ENABLE (pin 5)
−
40
°
C
≤
T
amb
≤
+85
°
C
V
ENABLE
(V)
≤
0.4
≥
0.7
State
OFF
ON
30
I
CC(tot)
(mA)
20
(2)
001aaj652
(3)
10
(1)
0
0
1000
2000
3000
4000
5000
6000 7000
R
bias
(Ω)
T
amb
= 25
°C.
(1) V
CC
= 2.2 V
(2) V
CC
= 2.5 V
(3) V
CC
= 2.85 V
Fig 1.
Total supply current as a function of bias resistor; typical values
BGU7003
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 22 June 2010
4 of 18
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
180°
0
0.2
0.5
6 GHz
100 MHz
−0.2
−5
1
2
5
10
0°
0
+0.2
+5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aaj653
T
amb
= 25
°C;
I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V; P
drive
=
−30
dBm; Z
0
= 50
Ω.
Fig 2.
Input reflection coefficient (S
11
); typical values
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
+0.2
+5
100 MHz
−0.2
6 GHz
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aaj654
T
amb
= 25
°C;
I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V; P
drive
=
−30
dBm; Z
0
= 50
Ω.
Fig 3.
Output reflection coefficient (S
22
); typical values
BGU7003
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 22 June 2010
5 of 18
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