BGA2776
MMIC wideband amplifier
Rev. 04 — 29 August 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
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sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
NXP
Semiconductors
Product specification
MMIC wideband amplifier
FEATURES
•
Internally matched
•
Very wide frequency range
•
Very flat gain
•
High gain
•
High output power
•
Unconditionally stable.
APPLICATIONS
•
Cable systems
•
LNB IF amplifiers
•
General purpose
•
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
s
21
2
NF
P
L(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
CONDITIONS
5
24.4
23.2
4.9
10.5
TYP.
6
−
−
−
−
Marking code:
G5-.
BGA2776
PINNING
PIN
1
2, 5
3
4
6
V
S
GND2
RF out
GND1
RF in
DESCRIPTION
6
5
4
1
6
3
1
Top view
2
3
MAM455
4
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
MAX.
UNIT
V
mA
dB
dB
dBm
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Rev. 04 – 29 August 2007
2 of 10
NXP
Semiconductors
Product specification
MMIC wideband amplifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
S
I
S
P
tot
T
stg
T
j
P
D
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
T
s
≤
80
°C
CONDITIONS
RF input AC coupled
−
−
−
−65
−
−
MIN.
6
BGA2776
MAX.
34
200
+150
150
10
UNIT
V
mA
mW
°C
°C
dBm
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
solder point
CONDITIONS
P
tot
= 200 mW; T
s
≤
80
°C
VALUE
300
UNIT
K/W
CHARACTERISTICS
V
S
= 5 V; I
S
= 24.4 mA; f = 1 GHz; T
j
= 25
°C;
unless otherwise specified.
SYMBOL
I
S
s
21
2
R
L IN
R
L OUT
NF
BW
P
L(sat)
P
L 1 dB
IP3
(in)
IP3
(out)
PARAMETER
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
19
TYP.
24.4
23.2
23.2
9
7
17
9
4.9
5.3
2.8
10.5
8.1
7.2
6
−4.6
−8.8
18.6
14.4
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
34
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
at
s
21
2
−3
dB below flat gain at 1 GHz
−
Rev. 04 – 29 August 2007
3 of 10
NXP
Semiconductors
Product specification
MMIC wideband amplifier
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2776 MMIC. The device is internally matched to 50
Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should be not more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
handbook, halfpage
BGA2776
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
DC-block
handbook, halfpage
100 pF
input
DC-block
100 pF
DC-block
100 pF
output
MGU437
Fig.3 Simple cascade circuit.
mixer
to IF circuit
or demodulator
wideband
amplifier
oscillator
from RF
circuit
MGU438
Fig.4 IF amplifier application.
V
halfpage
handbook,
s
C1
Vs
RF input
C2
GND1
GND2
RF in
RF out
C3
MGU436
L1
RF output
handbook, halfpage
mixer
to IF circuit
or demodulator
LNA
wideband
amplifier
oscillator
MGU439
antenna
Fig.2 Typical application circuit.
Fig.5 RF amplifier application.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
handbook, halfpage
mixer
to power
amplifier
wideband
amplifier
oscillator
from modulation
or IF circuit
MGU440
Fig.6 Power amplifier driver application.
Rev. 04 – 29 August 2007
4 of 10
FPGA/CPLD
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