MSA1162GT1G
General Purpose Amplifier
Transistors
PNP Surface Mount
Features
•
Moisture Sensitivity Level: 1
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Value
60
50
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
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COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
200
150
−55
to +150
Unit
mW
°C
°C
SC−59
CASE 318D
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80°C)
DC Current Gain (Note 1)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Current
−Gain −
Bandwidth Product
(I
C
= 1 mA, V
CE
= 10.0 V, f = 10 MHz)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
Min
50
60
7.0
−
Max
−
−
−
0.1
Unit
Vdc
Vdc
Vdc
mAdc
1
62G M
G
G
62G = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
−
−
−
200
−
0.1
2.0
1.0
400
0.5
mAdc
mAdc
mAdc
−
Vdc
MHz
ORDERING INFORMATION
Device
MSA1162GT1G
Package
SC−59
(Pb−Free)
Shipping
†
3000/Tape & Reel
h
FE
V
CE(sat)
f
T
80
−
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
©
Semiconductor Components Industries, LLC, 2013
1
October, 2013
−
Rev. 7
Publication Order Number:
MSA1162GT1/D
MSA1162GT1G
TYPICAL ELECTRICAL CHARACTERISTICS
−200
I
C
, COLLECTOR CURRENT (mA)
−2.0
mA
−160
−120
−80
I
B
=
−0.2
mA
−40
0
T
A
= 25°C
0
−1
−2
−3
−4
−5
−6
−1.5
mA
h
FE
, DC CURRENT GAIN
−1.0
mA
T
A
= 100°C
1000
−0.5
mA
25°C
100
−25°C
10
V
CE
=
−1.0
V
−1
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Collector Saturation Region
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
1000
T
A
= 100°C
−1
I
C
/I
B
= 10
T
A
= 100°C
25°C
−0.1
−25°C
h
FE
, DC CURRENT GAIN
25°C
100
−25°C
10
−1
V
CE
=
−6.0
V
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
−0.01
−1
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 4. V
CE(sat)
versus I
C
−10
BASE−EMITTER SATURATION
VOLTAGE (V)
−10,000
COMMON EMITTER
V
CE
= 6 V
T
A
= 100°C
25°C
I
B
, BASE CURRENT (mA)
−1000
−100
−10
−1
−0.1
−25°C
−1
T
A
= 25°C
I
C
/I
B
= 10
−10
−100
−1000
−0.1
−1
0
−0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9
V
BE
, BASE−EMITTER VOLTAGE (V)
−1
I
C
, COLLECTOR CURRENT (mA)
Figure 5. V
BE(sat)
versus I
C
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2
Figure 6. Base−Emitter Voltage
MSA1162GT1G
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
H
E
3
1
2
E
b
e
C
L
A
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
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MSA1162GT1/D