refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**Lead formed device.
Publication Order Number:
SA5.0A/D
October, 2009
−
Rev. 13
1
SA5.0A Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
≤
25°C
Steady State Power Dissipation @ T
L
≤
25°C, Lead Length = 3/8 in
Derated above T
L
= 50°C
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
I
FSM
T
J
, T
stg
Value
500
3.0
30
33.3
70
−
55 to +150
Unit
W
W
mW/°C
°C/W
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 4 and derated above T
A
= 25°C per Figure 5.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 6) = 35 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Variation of V
BR
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
http://onsemi.com
2
SA5.0A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 6) = 35 A)
V
RWM
(Note 3)
Volts
5
6
7
10
12
13
15
16
17
18
20
24
26
28
30
33
36
51
64
100
170
Breakdown Voltage
I
R
@ V
RWM
mA
600
600
150
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
BR
(Note 4)
(Volts)
Min
6.4
6.67
7.78
11.1
13.3
14.4
16.7
17.8
18.9
20
22.2
26.7
28.9
31.1
33.3
36.7
40
56.7
71.1
111
189
Nom
6.7
7.02
8.19
11.7
14
15.15
17.6
18.75
19.9
21.05
23.35
28.1
30.4
32.75
35.05
38.65
42.1
59.7
74.85
117
199
Max
7
7.37
8.6
12.3
14.7
15.9
18.5
19.7
20.9
22.1
24.5
29.5
31.9
34.4
36.8
40.6
44.2
62.7
78.6
123
209
@ I
T
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 5)
V
C
Volts
9.2
10.3
12
17
19.9
21.5
24.4
26
27.6
29.2
32.4
38.9
42.1
45.4
48.4
53.3
58.1
82.4
103
162
275
I
PP
A
54.3
48.5
41.7
29.4
25.1
23.2
20.6
19.2
18.1
17.2
15.4
12.8
11.9
11
10.3
9.4
8.6
6.1
4.9
3.1
1.8
QV
BR
mV/°C
5
5
6
10
12
13
16
17
19
20
23
28
30
31
36
39
41
61
76
123
208
Device*
SA5.0A, G
SA6.0AG
SA7.0ARLG
SA10AG
SA12AG
SA13AG
SA15AG
SA16AG
SA17ARLG
SA18ARLG
SA20ARLG
SA24AG
SA26ARLG
SA28ARLG
SA30ARLG
SA33ARLG
SA36AG
SA51AG
SA64ALFG
SA100AG
SA170ARLG
Device
Marking
SA5.0A
SA6.0A
SA7.0A
SA10A
SA12A
SA13A
SA15A
SA16A
SA17A
SA18A
SA20A
SA24A
SA26A
SA28A
SA30A
SA33A
SA36A
SA51A
SA64A
SA100A
SA170A
3. MiniMOSORBt transients suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which
should be equal to or greater than the dc or continuous peak operating voltage level.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute
*The “G’’ suffix indicates Pb−Free package or Pb−Free Packages available.
P K , PEAK POWER (kW)
P
NONREPETITIVE PULSE
WAVEFORM SHOWN IN
FIGURE 4
10
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T A = 25 C
°
100
100
80
60
40
20
0
0
25
50 75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
1
0.1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
p
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
http://onsemi.com
3
SA5.0A Series
PULSE WIDTH (t
p
) IS
DEFINED AS THAT POINT
WHERE THE PEAK
CURRENT DECAYS TO
50% OF I
PP
.
I
PP
2
t
r
≤
10
ms
10,000
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
100
VALUE (%)
PEAK VALUE
−
I
PP
1000
HALF VALUE
−
50
t
P
100
MEASURED @
(V
RWM
)
1
10
100
1000
0
0
10
0.1
1
2
3
4
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. Capacitance versus Breakdown Voltage
Figure 4. Pulse Waveform
PD, STEADY STATE POWER DISSIPATION (WATTS)
5
4
3/8″
3/8″
3
2
1
0
0 25 50 75 100 125 150 175 200
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Steady State Power Derating
UL RECOGNITION*
The entire series including the bidirectional CA suffix has
Underwriters Laboratory Recognition
for the classification
of protectors (QVGQ2) under the UL standard for safety
497B and File #E210057. Many competitors only have one
or two devices recognized or have recognition in a
non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and
several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their protector
category.
*Applies to SA5.0A
−
SA170A.
http://onsemi.com
4
SA5.0A Series
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY.
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN
F DIMENSION.
6. REPLACES CASE 59−09.
DIM
A
B
D
K
INCHES
MIN
MAX
0.228 0.299
0.102 0.142
0.028 0.034
1.000
−−−
MILLIMETERS
MIN
MAX
5.80
7.60
2.60
3.60
0.71
0.86
25.44
−−−
B
K
D
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
K
MiniMOSORB and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
