Preliminary
Datasheet
RJP60F0DPM
600 V - 25 A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.4 V typ. (at I
C
= 25 A, V
GE
= 15 V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
R07DS0585EJ0100
Rev.1.00
Nov 25, 2011
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
ic(peak)
Note1
P
C
j-c
Tj
Tstg
Ratings
600
±30
50
25
100
40
3.125
150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
RJP60F0DPM
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
Min
—
—
4
—
—
Typ
—
—
—
1.4
1.7
1550
82
26
46
92
70
90
Max
100
±1
8
1.82
—
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 25 A, V
GE
= 15V
Note3
I
C
= 50 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
Inductive load
Notes: 3. Pulse test
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 2 of 6
RJP60F0DPM
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
80
13 V
15 V
60
11 V
10 V
9.8 V
9.6 V
9.4 V
9.2 V
40
9V
8.8 V
8.6 V
V
GE
= 8.4 V
0
Collector Current I
C
(A)
PW
=1
10
1
0.1
0.01
0
μ
s
Collector Current I
C
(A)
100
10
0
μ
s
20
0.001
0.1
Tc = 25
°
C
1 shot pulse
1
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
100
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
10
Tc = 75°C
1
25°C
0.1
–25°C
2.6
Ta = 25
°
C
Pulse Test
2.2
1.8
I
C
= 50 A
25 A
15 A
1.4
0.01
4
6
8
10
12
1.0
6
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
−25
25 A
15 A
I
C
= 50 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
8
I
C
= 10 mA
6
1 mA
4
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125
150
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 3 of 6
RJP60F0DPM
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
Preliminary
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
V
GE
V
CE
V
CC
= 600 V
300 V
1000
600
12
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
250
300
Cres
400
V
CC
= 600 V
300 V
I
C
= 25 A
Ta = 25
°
C
0
0
12
24
36
48
8
200
4
1
0
60
Collector to Emitter Voltage V
CE
(V)
Gate Charge Qg (nc)
Switching Characteristics (Typical) (1)
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C, Resistive load
Switching Characteristics (Typical) (2)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 30 A, Ta = 25
°
C, Resitive load
Switching Time t (ns)
100
tf
td(off)
td(on)
Switching Time t (ns)
100
tf
td(off)
tr
td(on)
10
tr
1
1
10
100
10
1
10
100
Colloctor Current I
C
(A)
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (3)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω,
Resitive load
Switching Time t (ns)
tf
100
td(off)
tr
td(on)
10
25
50
75
100
125
150
Case Temperature Tc (
°
C)
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 4 of 6
Gate to Emitter Voltage V
GE
(V)
800
16
Capacitance C (pF)
RJP60F0DPM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
θj
– c(t) =
γs
(t) •
θj
– c
θj
– c = 3.125°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
100
D=
PW
T
0.02
0.01
10
μ
0.01
1 shot pulse
100
μ
Pulse Width
Switching Time Test Circuit
PW (s)
Waveform
90%
Diode clamp
V
GE
L
90%
90%
10%
I
C
D.U.T
Rg
V
CE
V
CC
10%
t
d(on)
t
on
t
r
10%
1%
t
d(off)
t
f
t
tail
t
off
10%
R07DS0585EJ0100 Rev.1.00
Nov 25, 2011
Page 5 of 6
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