RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4942
THRU
1N4948
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 200 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
High switching capability
Low leakage
Low forward voltage drop
High current capability
High surge current capability
DO-41
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.33 gram
.034 (0.9)
DIA.
.028 (0.7)
1.0 (25.4)
MIN.
.205 (5.2)
.166 (4.2)
.107 (2.7)
.080 (2.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
1N4942
200
140
200
1N4944
400
280
400
1N4946
600
420
600
1.0
30
15
-65 to + 150
1N4947
800
560
800
1N4948
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Full Cycle
Average, .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1N4942
1N4944
1N4946
1.3
5.0
I
R
100
trr
150
250
500
uAmps
nSec
2001-5
1N4947
1N4948
UNITS
Volts
uAmps
o
RATING AND CHARACTERISTIC CURVES ( 1N4942 THRU 1N4948 )
INSTANTANEOUS FORWARD CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
.2
0
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE, ( )
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1.0
TJ = 25
.1
Pulse Width=300uS
1% Duty Cycle
.01
.4
.6
.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
FORWARD SURGE CURRENT, (A)
SURGE CURRENT
50
8.3ms Single Half Sine-Wave
(JEDED Method)
INSTANTANEOUS REVERSE CURRENT, (uA)
20
10
TJ = 125
40
30
1.0
TJ = 75
20
.1
TJ = 25
10 1
0
0
2
4 6 8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
(+)
25 Vdc
(approx)
(-)
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
D.U.T
-0.25A
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
1
NOTES: Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
NXP MCU
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