To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FSB50450T Smart Power Module (SPM®)
May 2007
FSB50450T
Smart Power Module (SPM
®
)
Features
• 500V 3.0A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Extended VB pin for PCB isolation
General Description
FSB50450T is a tiny smart power module (SPM
®
) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50450T
Bias Voltage for U Phase IC and Low Side FRFET Driving
Signal Input for U Phase High-side
Signal Input for U Phase Low-side
No Connection
Bias Voltage for V Phase High Side FRFET Driving
Bias Voltage for V Phase IC and Low Side FRFET Driving
Signal Input for V Phase High-side
Signal Input for V Phase Low-side
No Connection
Bias Voltage for W Phase High Side FRFET Driving
Bias Voltage for W Phase IC and Low Side FRFET Driving
Signal Input for W Phase High-side
Signal Input for W Phase Low-side
No Connection
Positive DC–Link Input
Output for U Phase & Bias Voltage Ground for High Side FRFET Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Output for V Phase & Bias Voltage Ground for High Side FRFET Driving
Negative DC–Link Input for W Phase
Output for W Phase & Bias Voltage Ground for High Side FRFET Driving
(1) COM
(2) V
B(U)
(3) V
CC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) NC
(7) V
B(V)
(8) V
CC(V)
(9) IN
(VH)
(10) IN
(VL)
(11) NC
(12) V
B(W)
(13) V
CC(W)
(14) IN
(WH)
(15) IN
(WL)
(16) NC
Note:
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM
®
. External connections should be made as indicated in Fig-
ure 2 and 5.
(17) P
VCC
HIN
LIN
COM
VB
HO
VS
LO
(19) N
U
VCC
HIN
LIN
COM
VB
HO
VS
LO
(21) V, V
S(V)
(20) N
V
(18) U, V
S(U)
VCC
HIN
LIN
COM
VB
HO
VS
LO
(22) N
W
(23) W, V
S(W)
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
2
FSB50450T Rev. B
www.fairchildsemi.com
FSB50450T Smart Power Module (SPM®)
Electrical Characteristics
(T
J
= 25°C, V
CC
=V
BS
=15V Unless Otherwise Specified)
Inverter Part
(Each FRFET Unless Otherwise Specified)
Symbol
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
R
DS(on)
V
SD
t
ON
t
OFF
t
rr
E
ON
E
OFF
RBSOA
(Note 3)
V = 400V, V
CC
= V
BS
= 15V, I
D
= I
DP
, R
EH
= 0Ω
Reverse-bias Safe Oper-
PN
V
DS
=BV
DSS
, T
J
= 150°C
ating Area
High- and low-side FRFET switching (Note 4)
Switching Times
Parameter
Conditions
Min Typ Max Units
500
-
-
-
-
-
-
-
-
-
-
0.53
-
1.9
-
1152
600
185
85
11
-
-
250
2.4
1.2
-
-
-
-
-
V
V
μA
Ω
V
ns
ns
ns
μJ
μJ
Drain-Source Breakdown
V
IN
= 0V, I
D
= 250μA (Note 2)
Voltage
Breakdown Voltage Tem-
I
D
= 250μA, Referenced to 25°C
perature Coefficient
Zero Gate Voltage
Drain Current
Static Drain-Source
On-Resistance
Drain-Source Diode
Forward Voltage
V
IN
= 0V, V
DS
= 500V
V
CC
= V
BS
= 15V, V
IN
= 5V, I
D
= 1.0A
V
CC
= V
BS
= 15V, V
IN
= 0V, I
D
= -1.0A
V
PN
= 300V, V
CC
= V
BS
= 15V, I
D
= 1.0A
V
IN
= 0V
↔
5V
Inductive load L=3mH
High- and low-side FRFET switching
Full Square
Control Part
(Each HVIC Unless Otherwise Specified)
Symbol
I
QCC
I
QBS
UV
CCD
UV
CCR
UV
BSD
UV
BSR
V
IH
V
IL
I
IH
I
IL
Note:
1. For the measurement point of case temperature T
C
, please refer to Figure 3 in page 4.
2. BV
DSS
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM
®
. V
PN
should be sufficiently less than this value considering the
effect of the stray inductance so that V
DS
should not exceed BV
DSS
in any case.
3. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-
cuit that is same as the switching test circuit.
Parameter
Quiescent V
CC
Current
Quiescent V
BS
Current
Low-side Undervoltage
Protection (Figure 6)
High-side Undervoltage
Protection (Figure 7)
ON Threshold Voltage
OFF Threshold Voltage
Input Bias Current
V
CC
=15V, V
IN
=0V
V
BS
=15V, V
IN
=0V
Conditions
Applied between V
CC
and COM
Applied between V
B(U)
-U,
V
B(V)
-V, V
B(W)
-W
Min Typ Max Units
-
-
7.4
8.0
7.4
8.0
3.0
-
-
-
-
-
8.0
8.9
8.0
8.9
-
-
10
-
160
100
9.4
9.8
9.4
9.8
-
0.8
20
2
μA
μA
V
V
V
V
V
V
μA
μA
V
CC
Undervoltage Protection Detection Level
V
CC
Undervoltage Protection Reset Level
V
BS
Undervoltage Protection Detection Level
V
BS
Undervoltage Protection Reset Level
Logic High Level
Logic Low Level
V
IN
= 5V
V
IN
= 0V
Applied between IN and COM
Applied between IN and COM
Package Marking & Ordering Information
Device Marking
FSB50450T
Device
FSB50450T
Package
SPM23AC
Reel Size
_
Tape Width
_
Quantity
15
3
FSB50450T Rev. B
www.fairchildsemi.com
FSB50450T Smart Power Module (SPM®)
Recommended Operating Conditions
Symbol
V
PN
V
CC
V
BS
V
IN(ON)
V
IN(OFF)
t
dead
f
PWM
T
C
Parameter
Supply Voltage
Control Supply Voltage
High-side Bias Voltage
Input ON Threshold Voltage
Input OFF Threshold Voltage
Conditions
Applied between P and N
Applied between V
CC
and COM
Applied between V
B
and output(U, V, W)
Applied between IN and COM
Value
Min.
-
12
12
3.0
0
1.0
-
-20
Typ.
300
15
15
-
-
-
15
-
Max.
400
16.5
16.5
V
CC
0.6
-
-
125
Units
V
V
V
V
V
μs
kHz
°C
Blanking Time for Preventing
V
CC
=V
BS
=12 ~ 16.5V, T
J
≤
150°C
Arm-short
PWM Switching Frequency
Case Temperature
T
J
≤
150°C
T
J
≤
150°C
These values depend on PWM
control algorithm
15-V Line
R
1
D
1
VCC
HIN
LIN
C
5
COM
VB
HO
VS
LO
N
C
2
One-Leg Diagram of SPM
* Example of bootstrap paramters:
C
1
= C
2
= 1μF ceramic capacitor,
R
1
= 56Ω,
R
3
C
1
P
V
DC
HIN
0
LIN
0
1
0
1
Open
Output
Z
0
V
DC
Forbidden
Z
Note
Both FRFET Off
Low-side FRFET On
High-side FRFET On
Shoot-through
Same as (0, 0)
R
5
Inverter
Output
C
3
0
1
1
Open
Micom
10μF
Note:
(1) It is recommended the bootstrap diode D
1
to have soft and fast recovery characteristics with 600-V rating
(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
(3) RC coupling(R
5
and C
5
) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM
®
is compatible with
standard CMOS or LSTTL outptus.
(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C
1
, C
2
and C
3
should have good high-frequency characteristics to absorb high-frequency ripple current.
Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters
14.50mm
3.80mm
MOSFET
Note:
Case Temperature(Tc)
Detecting Point
Attach the thermocouple on top of the heatsink-side of SPM
®
(between SPM
®
and heatsink if applied) to get the correct temperature measurement.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
