Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N10M
SFF80N10Z
55 AMP (note 1) /100 Volts
12 mO
N-Channel Trench Gate MOSFET
Features:
•
•
•
•
•
•
•
•
•
Trench gate technology for high cell density
Lowest ON-resistance in the industry
Enhanced operating temperature range
Hermetically Sealed, Isolated Power Package
Low Total Gate Charge
Fast Switching
Enhanced replacement for IRM150
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
DESIGNER’S DATA SHEET
TO-254, TO254Z
Note 1: maximum current limited by package
configuration
TO-254 (SFF85N10M)
TO-254Z (SFF85N10Z)
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
@ T
C
= 25ºC
@ T
C
= 125ºC
@ T
C
= 25ºC
@ T
C
= 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T
C
= 25ºC
Symbol
V
DSS
V
GS
I
D1
I
D2
I
D3
I
D4
I
AR
E
AR
P
D
T
OP
& T
STG
R
0JC
Value
100
±20
55 (note 1)
55 (note 1)
110
70
75
280
250
-55 to +200
0.7
(typ 0.55)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
TO-
TO-254
PIN 3
PIN 2
PIN 3
PIN 1
PIN 2
PIN 1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N10M
SFF80N10Z
Symbol
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 30A, Tj= 25
o
C
V
GS
= 10V, I
D
= 30A, Tj=125
o
C
V
GS
= 10V, I
D
= 30A, Tj= 200
o
C
V
GS
= 10V, I
D
= 85A, Tj= 25
o
C
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V
V
DS
= 80V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= 80V, V
GS
= 0V, T
j
= 125
o
C
V
DS
= 80V, V
GS
= 0V, T
j
= 200
o
C
V
DS
= 15V, I
D
= 30A, T
j
= 25
o
C
V
GS
= 10V
V
DS
= 50V
I
D
= 85A
V
GS
= 10V
V
DS
= 50V
I
D
= 85A
R
G
= 2.5O
I
F
= 50A, V
GS
= 0V
I
F
= 50A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
BV
DSS
Electrical Characteristics
4/
Drain to Source Breakdown Voltage
Min
100
––
––
––
––
2.0
––
––
––
23
––
––
––
––
––
––
––
––
––
––
––
––
Typ Max
––
9.5
16
22
10
––
––
––
––
––
140
40
40
25
115
75
110
1.0
70
5.5
0.2
8700
750
450
––
12.0
––
––
––
4.0
±100
1
50
10
––
220
––
––
35
185
110
160
1.5
150
10
0.35
––
––
––
Units
V
Drain to Source On State Resistance
R
DS(on)
mO
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
I
RM(rec)
Q
rr
C
iss
C
oss
C
rss
V
nA
µA
µA
mA
Mho
nC
nsec
V
nsec
A
µC
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25
o
C.
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard)
Package
Drain
Source
Gate
Pin 1
Pin 2
Pin 3
TO254
Pin 1
Pin 2
Pin 3
TO254Z
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A
DOC
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