Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF9140J
-18 AMPS
-100 VOLTS
0.20
Ω
P-CHANNEL
POWER MOSFET
TO-257
Designer’s Data Sheet
FEATURES:
•
•
•
•
•
•
•
•
•
Rugged Construction with Poly Silicon Gate
Low RDS(on) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy
Paralleling
Hermetically Sealed
Replaces: IRF9140 Types
TX, TXV, and Space Level Screening Available.
Consult Factory.
•
MAXIMUM RATINGS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
Symbol
V
DS
V
GS
T
C =
25
o
C
T
C =
100
o
C
I
D
T
OP
& T
stg
R
θJC
T
C =
25
o
C
T
C =
55
o
C
P
D
E
AS
E
AR
Value
-100
±20
-18
-11
-55 to +150
2.0
63
48
500
12.5
Units
Volts
Volts
Amps
o
o
C
C/W
Watts
mJ
mJ
SUFFIX JDB
SUFFIX JUB
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0015G
DOC
SFF9140J
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Drain to Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 1 mA)
Temperature Coefficient of Breakdown Voltage
Drain to Source ON State Resistance
(V
GS
= -10 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250µA)
Forward Transconductance
(V
DS
> 10V, I
DS
= 11A)
Zero Gate Voltage Drain Current
(V
DS
= 80% rated V
DS
, V
GS
= 0 V)
o
(V
DS
= 80% rated V
DS
, V
GS
= 0 V, T
A
= 125 C)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall TIme
Diode Forward Voltage
(IS = rated ID, VGS = 0 V, T
J
= 25°C)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
T
J
= 25 C
I
F
= rated I
D
di/dt = 100 A/µsec
V
GS
= 0 Volts
V
DS
= -25 Volts
f = 1 MHz
o
Symbol
∆BV
DSS
∆BV
DSS
T
J
I
D
= 11A
I
D
= 18A
R
DS(on)
V
GS(th)
gfs
I
DSS
I
gSS
Q
g
Q
gs
Q
gd
t
d(on)r
t
r
t
d(off)
t
f
V
SD
t
rr
Q
RR
C
iss
C
oss
C
rss
Min
-100
––
––
––
-2.0
6.1
––
––
––
––
31
––
7
––
––
––
––
––
––
––
––
––
––
Typ
––
0.087
0.15
––
––
8.0
––
––
––
––
50
3
25
15
8
35
20
––
170
––
1400
600
200
Max
––
––
0.20
0.23
-4.0
––
25
250
-100
100
70
15
45
35
85
85
65
-4.2
280
3.6
1650
740
260
Unit
Volts
Volts
Ω
Volts
S mho
µA
nA
nC
At rated V
GS
V
GS
= -10 Volts
50% rated V
DS
I
D
= -18 A)
(V
DD
= 50% of
rated V
DS
rated I
D
R
G
= 9.1
Ω)
ns
Volts
ns
µC
ns
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