VS-65EPF12LHM3, VS-65APF12LHM3
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
2
1
1
2
3
3
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
TO-247AD 3L
Base cathode
2
TO-247AD 2L
Base cathode
2
• Flexible solution for reliable AC power
rectification
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
3
Anode
1
Anode
3
Anode
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
VS-65EPF12LHM3
VS-65APF12LHM3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Package
Circuit configuration
Snap factor
65 A
1200 V
1.42 V
830 A
95 ns
150 °C
TO-247AD 2L, TO-247AD 3L
Single
0.6
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage, and short reverse
recovery time.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
30 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
65
1200
830
95
1.20
-40 to +150
UNITS
A
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-65EPF12LHM3
VS-65APF12LHM3
V
RSM
, MAXIMUM
V
RRM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
1200
1200
1300
1300
I
RRM
AT 150 °C
mA
16
Revision: 22-Feb-18
Document Number: 96497
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPF12LHM3, VS-65APF12LHM3
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 113 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
65
700
830
2450
3460
34 600
A
2
s
A
2
s
A
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
65 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
VALUES
1.42
4.6
0.9
0.1
16
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 60 A
pk
25 A/μs
25 °C
Typical
VALUES
480
8
2.7
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
unction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AD 2L
Case style TO-247AD 3L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.25
40
0.25
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
65EPF12LH
65APF12LH
°C/W
UNITS
°C
Revision: 22-Feb-18
Document Number: 96497
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPF12LHM3, VS-65APF12LHM3
www.vishay.com
Vishay Semiconductors
Max. Average On-state Power Loss (W)
150
180°
120°
90°
60°
30°
Max. Allowable Case Temperature (°C)
150
R
thJC
(DC) = 0.25 °C/W
140
130
120
110
60°
100
90
0
10
20
30
40
50
60
70
30°
90°
120°
180°
Conduction
120
DC
90
RMS limit
60
Conduction Angle
30
Tj = 150°C
0
0
20
40
60
80
100
120
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-state Current (A)
Fig. 4 - Forward Power Loss Characteristics
Max. Allowable Case Temperature (°C)
150
140
130
120
110
100
90
80
0
20
R
thJC
(DC) = 0.25 °C/W
800
At any rated load condition and with
rated V
RRM
applied following surge.
Conduction angle
Peak Half Sine Wave
Forward Current (A)
700
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
600
500
60°
30°
90°
120°
180°
DC
400
300
1
40
60
80
100
120
10
100
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Max. Average On-state Power Loss (W)
120
100
80
60
40
Conduction angle
20
T
J
= 150 °C
0
0
10
20
30
40
50
60
70
180°
120°
90°
60°
30°
900
800
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Peak Half Sine Wave
Forward Current (A)
700
600
500
400
300
0.01
RMS limit
0.1
1
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 22-Feb-18
Document Number: 96497
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPF12LHM3, VS-65APF12LHM3
www.vishay.com
Vishay Semiconductors
12 000
T
J
= 25 °C
I
FM
= 60 A
10 000
8000
6000
4000
2000
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 30 A
Instantaneous Forward Current (A)
1000
100
10
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Q
rr
- Typical Reverse
Recovery Charge (µC)
0
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
600
T
J
= 25 °C
500
25 000
T
J
= 150 °C
I
FM
= 60 A
400
300
200
I
FM
= 5 A
100
0
0
40
80
120
I
FM
= 60 A
I
FM
= 30 A
I
FM
= 10 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (ns)
20 000
15 000
I
FM
= 30 A
10 000
I
FM
= 10 A
5000
I
FM
= 5 A
I
FM
= 1 A
0
I
FM
= 1 A
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
45
1200
T
J
= 150 °C
40
T
J
= 25 °C
I
FM
= 60 A
I
rr
- Typical Reverse
Recovery Current (A)
1000
35
30
25
20
15
10
5
0
0
40
80
120
I
FM
= 1 A
160
200
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 30 A
t
rr
- Typical Reverse
Recovery Time (ns)
800
I
FM
= 60 A
600
I
FM
= 30 A
400
200
0
0
40
80
120
160
200
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 5 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Revision: 22-Feb-18
Document Number: 96497
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPF12LHM3, VS-65APF12LHM3
www.vishay.com
Vishay Semiconductors
60
T
J
= 150 °C
50
I
FM
= 60 A
I
rr
- Typical Reverse
Recovery Current (A)
I
FM
= 30 A
40
I
FM
= 10 A
30
20
10
0
0
40
80
120
160
200
I
FM
= 5 A
I
FM
= 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Transient Thermal Impedance Z
thJC
(°C/W)
1
0.5
0.1
0.25
0.17
0.08
0.33
Steady state
value
(DC operation)
0.01
Single
pulse
0.001
0.0001
0.001
0.01
0.1
1
Square
Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 22-Feb-18
Document Number: 96497
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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