Bulletin I27136 rev. B 09/97
IRKU/V105 SERIES
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
NEW ADD-A-pak
TM
Power Modules
105 A
Description
These IRKU/V series of NEW ADD-A-paks use
power thyristors in two circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase bridges
(IRKU+IRKV) or 6-pulse midpoint connection
bridge. These modules are intended for general
purpose high voltage applications such as high
voltage regulated power supplies, battery charge
and DC motor speed control circuits.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
T
J
IRKU/V105
105
165
1785
1870
15.91
14.52
159.1
400 to 1600
- 40 to 125
- 40 to130
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
C
C
o
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
IRKU/V105
08
12
16
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive I
RRM
repetitive
non-repetitive
peak off-state voltage, I
DRM
peak reverse voltage peak reverse voltage
gate open circuit
130°C
V
400
800
1200
1600
V
500
900
1300
1700
V
400
800
1200
1600
mA
20
On-state Conduction
Parameters
I
T(AV)
Max. average on-state
current
I
T(RMS
)
Max. RMS on-state
current.
I
TSM
@ T
C
Max. peak, one cycle
non-repetitive on-state
current
IRKU/V105
105
165
77
1785
1870
1500
1570
2000
2100
Units
A
°C
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
DC
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
Initial T
J
= T
J
max.
Sinusoidal
half wave,
Initial T
J
= T
J
max.
A
I t
2
Max. I t for fusing
2
15.91
14.52
11.25
10.27
20.00
18.30
KA s
2
I
√t
2
Max. I
√t
for fusing (1)
2
159.1
0.80
0.85
2.37
2.25
1.64
K A
√s
2
t= 0.1 to 10ms, no voltage reappl., T
J
=T
J
max.
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
V
T(TO)
Max. value of threshold
voltage (2)
r
t
V
TM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state
voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
V
mΩ
V
T
J
= 25
o
C, from 0.67 V
DRM
,
150
200
mA
400
A/µs
I
TM
=π x I
T(AV)
,
I = 500mA,
g
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V,resistive load
(1) I
2
t for time t = I
2
√t
x
√t
.
x
x
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
(2) Average power =
V
T(TO)
x I
T(AV)
+
r
t
x
(
I
T(RMS)
)
2
(4)
I >
π
x I
AV
2
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
Triggering
Parameters
P
GM
I
GM
V
GT
Max. peak gate power
IRK.U/V105
12
3
3
10
4.0
2.5
1.7
270
150
80
0.25
6
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
-V
GM
Max. peak negative gate voltage
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
V
GD
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
V
INS
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
RMS isolation voltage
2500 (1 min)
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V
50 Hz, circuit to base, all terminals
shorted
T
J
= 130
o
C, linear to 0.67 V
DRM
,
gate open circuit
20
mA
T
J
= 130
o
C, gate open circuit
IRKU/V 105
Units
Conditions
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16S90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating temperature
range
Storage temperature range
IRKU/V105
- 40 to 130
- 40 to 125
0.135
Units
Conditions
°C
Per module, DC operation
K/W
R
thJC
Max. internal thermal resistance,
junction to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness
<
0.02 mm
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
5
3
83 (3)
TO-240AA
Nm
g (oz)
JEDEC
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRKU/V105
Sine half wave conduction
180
o
Rect. wave conduction
30
o
120
o
90
o
60
o
180
o
120
o
0.05
90
o
0.06
60
o
0.08
30
o
0.12
Units
°C/W
0.04
0.05
0.06
0.08
0.12
0.03
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
Outlines Table
IRKU105/.. (*)
IRKV105/.. (*)
30 ± 0.5
(1.18 ± 0.02)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(1.18 ± 0.04)
30 ± 0.1
29 ± 0.5
(1.13 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
All dimensions in millimeters (inches)
(0.24 ± 0.01)
24 ± 0.5
5.8 ± 0.25
(0.94 ± 0.02)
(0.23 ± 0.01)
6.1 ± 0.3
20.5 ± 0.75
(0.81 ± 0.03)
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
(*)
For terminals connections, see Circuit Configurations Table
Circuit Configurations Table
IRKU
(1)
+
4 5
IRKV
(1)
-
(2)
-
-
(3)
G1
K1
(4) (5)
K2
G2
(7) (6)
+
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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Pitch 4.0 ± 0.2
(0.16 ± 0.01)
2
3
7 6
+
(2)
IRKU/V105 Series
Bulletin I27136 rev. B 09/97
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
-
-
-
-
-
Module type
U
2
105
3
/
16 S90
4
5
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Maximum Allowable Case Temperature (°C)
120
110
IRK.105.. Series
R
thJC
(DC) = 0.27 K/W
Maximum Allowable Case Temperature (°C)
130
130
IRK.105.. Series
R
(DC) = 0.27 K/W
120
110
Conduction Period
thJC
Conduction Angle
100
90
80
70
0
20
40
60
80
100
120
Average On-state Current (A)
100
90
80
70
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
30°
60°
90°
120°
180°
30°
60°
90°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
160
140
120
100
80
60
Conduction Angle
Fig. 2 - Current Ratings Characteristics
200
180
160
140
120
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
Maximum Average On-state Power Loss (W)
100 RMS Limit
80
60
40
20
0
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
IRK.105.. Series
Per Junction
T
J
= 130°C
Conduction Period
40
20
0
0
20
40
60
80
100
120
Average On-state Current (A)
IRK.105.. Series
Per Junction
T
J
= 130°C
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
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