Designed primarily for high-voltage applications as a high-power
linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station
equipment.
Rev. V1
Product Image
Specified 50 V, 30 MHz Characteristics —
Output power = 150 W (PEP)
Minimum gain = 13 DB
Efficiency = 45%
Intermodulation distortion @ 150 W (PEP) —
IMD = -30 db (max.)
100% tested for load mismatch at all phase angles with 30:1
VSWR @ 150 W CW
CASE 211–11, STYLE 1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MRF428
The RF Line NPN Silicon Power Transistor
150W(PEP), 30MHz, 50V
Rev. V1
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MRF428
The RF Line NPN Silicon Power Transistor
150W(PEP), 30MHz, 50V
Rev. V1
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MRF428
The RF Line NPN Silicon Power Transistor
150W(PEP), 30MHz, 50V
Rev. V1
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MRF428
The RF Line NPN Silicon Power Transistor
150W(PEP), 30MHz, 50V
Rev. V1
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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