IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
11
7
4
Single
S
FEATURES
•
•
•
•
•
•
•
•
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
P-Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
3
D
2
PAK (TO-263)
G
Note
*
Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
2
PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
D
2
PAK (TO-263)
SiHF9610S-GE3
Lead (Pb)-free and Halogen-free
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
Lead (Pb)-free
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
G D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
d
Peak Diode Recovery dV/dt
b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. I
SD
- 1.8 A, dI/dt
70 A/μs, V
DD
V
DS
, T
J
150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Mount)
d
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 200
± 20
- 1.8
-1
-7
0.16
0.025
20
3
-5
- 55 to + 150
300
c
W/°C
W
V/ns
°C
A
UNIT
V
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
TYP.
-
-
-
MAX.
62
40
6.4
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 0.90 A
b
V
DS
= - 50 V, I
D
= - 0.90 A
b
- 200
-
-2
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
-4
± 100
- 100
- 500
3
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1 MHz, see fig. 10
-
-
-
-
170
50
15
-
-
-
8
15
1
8
4.5
7.5
-
-
-
11
7
4
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 3.5 A, V
DS
= - 160 V,
see fig. 11 and 18
b
-
-
-
V
DD
= - 100 V, I
D
= - 0.90 A,
R
G
= 50
,
R
D
= 110
,
see fig. 17
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
240
1.7
- 1.8
A
-7
- 5.8
360
2.6
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 1.8 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 1.8 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width
300 μs; duty cycle
2 %.
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
- 2.40
V
GS
= - 10, - 9, - 8, - 7 V
- 1.92
- 1.92
- 2.40
V
GS
= - 10, - 9, - 8 V
-7V
Vishay Siliconix
I
D
, Drain Current (A)
- 1.44
I
D
, Drain Current (A)
-6V
- 1.44
-6V
- 0.96
-5V
80 µs Pulse Test
0.00
0
- 10
- 20
- 30
- 40
- 50
-4V
- 0.96
-5V
80 µs Pulse Test
0.00
0
-2
-4
-6
-8
- 10
-4V
- 0.48
- 0.48
91081_01
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
91081_03
V
DS,
Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
- 2.40
10
2
- 1.92
I
D
, Drain Current (A)
T
J
= 25
°
C
T
J
= 125
°
C
Negative I
D
, Drain Current (A)
T
J
= - 55
°
C
5
Operation in this area limited
by R
DS(on)
2
10
5
- 1.44
100
µs
- 0.96
2
1
5
2
1
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
- 0.48
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on) max.
0
91081_02
10
ms
0.00
-2
-4
0.1
-6
-8
- 10
91081_04
10
2
5
10
2
2
5
10
3
V
GS,
Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
Z
thJC
(t)/R
thJC
, Normalized Effective Transie
Thermal Impedence (Per Unit)
2.0
1.0
0.5
0.2
0.1
0.05
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse (Transient
Thermal Impedence)
2
5
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Per Unit Base = R
thJC
= 6.4 °C/W
3. T
JM
- T
C
= P
DM
Z
thJC
(t)
5
0.01
10
-5
10
-4
2
5
10
-3
2
10
-2
2
5
0.1
2
5
1.0
2
5
10
91081_05
t
1
, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.0
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
2.5
I
D
= - 0.6 A
V
GS
= - 10 V
g
fs
,Transconductance (S)
1.6
T
J
= - 55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
2.0
1.2
1.5
0.8
1.0
0.4
0.5
0.0
0
91081_06
- 0.48
- 0.96
- 1.44
- 1.92
- 2.40
91081_09
0.0
- 40
0
40
80
120
160
I
D,
Drain Current (A)
T
J
, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 9 - Normalized On-Resistance vs. Temperature
500
- 10.0
- 5.0
400
I
D
, Drain Current (A)
C, Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C ,C
C
oss
= C
ds
+
gs gd
C
gs
+ C
gd
≈
C
gs
+ C
gd
C
iss
- 2.0
- 1.0
T
J
= 150
°
C
- 0.5
T
J
= 25
°
C
300
200
C
oss
100
C
rss
- 0.2
0
- 0.1
- 2.0
91081_07
0
- 3.2
- 4.4
- 5.6
- 6.8
- 8.0
91081_10
- 10
- 20
- 30
- 40
- 50
V
DS
, Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Negative V
GS
, Gate-to-Source Voltage (V)
BV
DSS
, Drain-to-Source Breakdown
Voltage (Normalized)
1.25
20
I
D
= - 1.8 A
V
DS
= - 100 V
V
DS
= - 60 V
V
DS
= - 40 V
1.15
16
1.05
12
0.95
8
0.85
4
For test circuit
see figure 18
0.75
- 40
91081_08
0
0
2
4
0
40
80
120
160
91081_11
6
8
T
J
, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
Q
G
, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
7
6
P
D
, Power Dissipation (W)
R
DS(on)
, Drain-to-Source
On Resistance (Ω)
R
DS(on)
measured with current pulse of
2.0 µs duration. Initial T
J
=
25 °C.
(Heating effect of
2.0 µs pulse is minimal.)
V
GS
= - 10 V
20
5
4
3
15
10
V
GS
= - 20 V
2
1
0
0
-1
-2
-3
-4
-5
-6
-7
5
0
0
91081_14
20
40
60
80
100
120
140
91081_12
I
D
, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
T
C
, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary t
p
to obtain
required I
L
D.U.T.
V
DS
V
DD
E
C
0.05
Ω
-
+
2.0
V
GS
= - 10 V
t
p
Negative I
D
, Drain Current (A)
I
L
1.6
V
DD
= 0.5 V
DS
E
C
= 0.75 V
DS
1.2
Fig. 15 - Clamped Inductive Test Circuit
0.8
V
DD
0.4
I
L
0.0
25
50
75
100
125
150
t
p
E
C
91081_13
T
C
, Case Temperature (°C)
V
DS
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 16 - Clamped Inductive Waveforms
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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