IRG5K50P5K50PM06E
IRG5U100HH06E
V
CES
= 600V
I
C
= 100A at T
C
= 80°C
t
SC
≥ 10µsec
V
CE(ON)
= 2.60V at I
C
= 100A
IGBT H-Bridge
POWIR ECO 2
™
Package
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
DC Inverter Drive
Features
Low V
CE(ON)
and Switching Losses
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR ECO 2
™
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG5U100HH06E
Package Type
POWIR ECO 2
™
Standard Pack
Box
Quantity
80
Orderable Part Number
IRG5U100HH06E
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 150°C
T
C
= 25°C, T
J
= 150°C
600
±20
100
130
200
400
150
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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IRG5K50P5K50PM06E
IRG5U100HH06E
Electrical Characteristics of IGBT at T
J
= 25°C (Unless Otherwise Specified)
Parameter
V
(BR)CES
V
GE(th)
V
CE(ON)
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
Collector to Emitter Saturation Voltage
(Module Level)
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Min.
600
3.5
4.5
2.60
3.00
1
400
5.5
2.90
Typ.
Max.
Unit
V
V
V
V
mA
nA
Test Conditions
V
GE
= 0V, I
C
= 1mA
I
C
= 0.25mA, V
CE
= V
GE
T
J
= 25°C
T
J
= 125°C
I
C
= 100A,
V
GE
= 15V
I
CES
I
GES
V
GE
= 0V, V
CE
= V
CES
V
GE
= ±20V, V
CE
= 0
Switching Characteristics of IGBT
Parameter
t
d(on)
Turn-on Delay Time
Min.
Typ.
130
135
100
100
350
805
85
115
1.43
1.77
1.02
3.36
530
6.1
0.64
0.26
nF
V
CE
= 25V, V
GE
= 0V,
f
＝1MHz,
T
J
= 25°C
Max.
Unit
ns
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
CC
=300V,
I
C
= 100A,
R
G
= 20Ω,
V
GE
=±15V,
Inductive
Load
t
r
Rise Time
ns
t
d(off)
Turn-off Delay Time
ns
t
f
Fall Time
ns
E
on
Turn-on Switching Loss
mJ
E
off
Q
g
C
ies
C
oes
C
res
Turn-off Switching Loss
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nC
RBSOA
Reverse Bias Safe Operating Area
Trapezoid
I
C
= 200A,V
CC
= 480V,
V
P
=600V, R
G
= 15Ω,
V
GE
= +15V to 0V,
T
J
= 150°C
μs
V
CC
= 300V, V
GE
= 15V,
T
J
= 150°C
SCSOA
Short Circuit Safe Operating Area
10
2
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September 2, 2014
IRG5K50P5K50PM06E
IRG5U100HH06E
Absolute Maximum Ratings of Freewheeling Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
600
200
100
200
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
V
F
Forward Voltage
Typ.
1.50
1.50
50
60
3.0
5.3
0.5
1.0
Max.
1.80
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝100A,
di/dt=1100A/μs,
V
rr
= 300V,
V
GE
= -15V
I
F
= 100A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
NTC-Thermistor Characteristic Values
Parameter
R
25
R/R
P
25
B
25/50
B
25/80
T
C
=25°C
T
C
=100°C，R
100
=481Ω
T
C
=25°C
R
2
=R
25
exp[B
25/50
(1/T
2
-1/(298.15K))]
R
2
=R
25
exp[B
25/80
(1/T
2
-1/(298.15K))]
50
3380
3440
Typ.
5
±5
Max.
Unit
kΩ
%
mW
K
K
Module Characteristics
Parameter
V
iso
R
θJC
R
θJC
R
θCS
M
G
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Case-To-Sink
(Conductive Grease Applied)
Mounting Screw: M6
Weight
4.0
200
0.31
1.06
0.1
6.0
Min.
Typ.
Max.
2500
Unit
V
°C/W
°C/W
°C/W
N·m
g
3
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September 2, 2014
IRG5K50P5K50PM06E
IRG5U100HH06E
200
180
160
140
120
VGE =15V
TJ =125
°
C
TJ =25
°
C
200
180
160
140
120
TJ =125°C
VGE
=17V
VGE =15V
VGE
=13V
VGE =11V
VGE
=9V
IC (A)
100
80
60
40
20
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
IC (A)
100
80
60
40
20
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
Fig.1 Typical IGBT Saturation Characteristics
200
180
160
140
120
VGE =0V
TJ =125°C
TJ =25°C
Fig.2 Typical IGBT Output Characteristics
12
10
8
VCE= 0 V,f=1MHz
Cies
Coes
IF (A)
100
80
60
40
20
0
0.0
0.4
0.8
1.2
VF (V)
1.6
2.0
2.4
C (nF)
6
4
2
0
0
5
10
VCE (V)
15
20
25
Fig.3 Typical Freewheeling Diode Characteristics
Fig. 4 Typical Capacitance Characteristics
8
7
6
5
VCC =300V,VGE
=+/-15V,
Rg =20 ohm,TJ
=125°C
Eoff
Eon
7
6
5
VCC
=300V,VGE =+/-15V,
IC
=100A,TJ =125°C
Eoff
Eon
Erec
E (mJ)
4
3
2
1
0
0
20
40
60
80
100 120
IC (A)
140
160
180
200
E (mJ)
Erec
4
3
2
1
0
0
5
10
15
20
25
30
Rg (
)
35
40
45
50
Fig.5 Typical Switching Loss vs. Collector Current
Fig.6 Typical Switching Loss vs. Gate Resistance
4
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IRG5K50P5K50PM06E
IRG5U100HH06E
120
100
80
60
40
20
0
Square Wave:
Vcc
Duty Cycle:50%
TJ =125°C
TC =80°C
Rg=20 ohm,VGE =15V
200
150
Load Current (A)
IC (A)
I
100
50
Diode as specified
Module
Chip
10
Frequency (KHz)
100
0
0
100
200
300
400
VCES (V)
500
600
1
Fig.7 Typical Load Current vs. Frequency
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.4
ZthJC:IGBT
0.3
1.2
1.0
0.8
ZthJC:Diode
ZthJC
(K/W)
0.2
ZthJC
(K/W)
0.6
0.4
0.2
0.1
0.0
0.001
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t
(
s
)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
20
18
16
14
Rtyp
R
(
Kohm
)
12
10
8
6
4
2
0
0
10
20
30
40
50
60 70
TC (°C)
80
90 100 110 120
Fig.11
NTC Temperature Characteristics
5
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September 2, 2014
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