EEPROM
AS58LC1001
128K x 8 EEPROM
Radiation Tolerant
AVAILABLE AS MILITARY
SPECIFICATIONS
MIL-PRF-38535
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
FEATURES
High speed: 250ns and 300ns
Data Retention: 10 Years
Low power dissipation, active current (20mW/MHz
(TYP)), standby current (100μW(MAX))
Single +3.3V +.3V power supply
Data Polling and Ready/Busy Signals
Erase/Write Endurance (10,000 cycles in a page mode)
Software Data protection Algorithm
Data Protection Circuitry during power on/off
Hardware Data Protection with RES pin
Automatic Programming:
Automatic Page Write: 15ms (MAX)
128 Byte page size
GENERAL DESCRIPTION
The AS58LC1001 is a 1 Megabit CMOS Electrically Erasable
Programmable Read Only Memory (EEPROM) organized as 131, 072
x 8 bits. The AS58LC1001 is capable or in system electrical Byte and
Page reprogrammability.
The AS58LC1001 achieves high speed access, low power consump-
tion, and a high level of reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology and
CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make
its erase and write operations faster. The AS58LC1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection.
Hard-
ware data protection is provided with the RES pin, in addition to noise
protection on the WE signal and write inhibit during power on and
off. Software data protection is implemented using JEDEC Optional
Standard algorithm.
The AS58LC1001 is designed for high reliability in the most
demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles
in the Page Mode.
OPTIONS
MARKINGS
Timing
250ns access
-25
300ns access
-30
Packages
Ceramic Flat Pack
F
No. 306
Radiation Shielded Ceramic FP* SF
No. 305
Ceramic SOJ
DCJ No. 508
Operating Temperature Ranges
-Military (-55
o
C to +125
o
C)
XT
o
o
-Industrial (-40 C to +85 C)
IT
o
o
-Full Military Processing (-55 C to +125 C) 883C
*NOTE:
Package lid is connected to ground (Vss). 2-sided shielding
provided via a Tungsten lid and a Tungsten slug on the underside of
package. 6.5X typ. TID boost due to shielding. (Geostationary orbit) Proven
typ. total dose 40K to 100K RADS. Contact factory for more information.
Micross can perform TID lot testing.
For more products and information
please visit our web site at
www.micross.com
AS58LC1001
Rev. 1.8 11/10
Micross Components reserves the right to change products or specifications without notice.
1
EEPROM
AS58LC1001
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
High Voltage Generator
I/O0
I/O7
Ready/Busy
OE\
I/O Buffer
and
Input Latch
Control Logic and Timing
CE\
WE\
RES\
A0
A6
Y Decoder
Y Gating
Address
Buffer and
Latch
X Decoder
A7
A16
Memory Array
Data Latch
MODE SELECTION
MODE
READ
STANDBY
WRITE
DESELECT
WRITE
INHIBIT
DATA
POLLING
PROGRAM
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE\
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
RES\
V
H
X
V
H
V
H
X
X
V
H
V
IL
RDY/BUSY\
1
High-Z
High-Z
High-Z to V
OL
High-Z
---
---
V
OL
High-Z
I/O
D
OUT
High-Z
D
IN
High-Z
---
---
Data Out
(I/O7)
High-Z
AS58LC1001
Rev. 1.8 11/10
Micross Components reserves the right to change products or specifications without notice.
2
EEPROM
AS58LC1001
FUNCTIONAL DESCRIPTION
AUTOMATIC PAGE WRITE
The Page Write feature allows 1 to 128 Bytes of data to
be written into the EEPROM in a single cycle and allows the
undefined data within 128 Bytes to be written corresponding
to the undefined address (A
0
to A
6
). Loading the first Byte of
data, the data load window of 30μs opens for the second. In
the same manner each additional Byte of data can be loaded
within 30μs. In case CE\ and WE\ are kept high for 100μs after
data input, the EEPROM enters erase and write automatically
and only the input data can be written into the EEPROM. In
Page mode the data can be written and accessed 10
4
times per
page, and in Byte mode 10
3
times per Byte.
DATA PROTECTION
To protect the data during operation and power on/off, the
AS58C1001 has:
1. Data protection against Noise on Control Pins (CE\, OE\,
WE\) during Operation. During readout or standby, noise on
the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. To prevent this phenomenon,
the AS58LC1001 has a noise cancellation function that cuts
noise if its width is 20ns or less in programming mode. Be
careful not to allow noise of a width of more than 20ns on the
control pins.
DATA\ POLLING
Data\ Polling allows the status of the EEPROM to be de-
termined. If the EEPROM is set to Read mode during a Write
cycle, and inversion of the last Byte of data to be loaded outputs
from I/O, to indicate that the EEPROM is performing a Write
operation.
WRITE PROTECTION
(1) Noise protection: Noise on a write cycle will not act
as a trigger with a WE\ pulse of less than 20ns.
(2) Write inhibit: Holding OE\ low, WE\ high or CE\ high
inhibits a write cycle during power on/off.
WE\ AND CE\ PIN OPERATION
During a write cycle, addresses are latched by the falling
edge of WE\ or CE\, and data is latched by the rising edge of
WE\ or CE\.
WRITE/ERASE ENDURANCE AND
DATA RETENTION
The endurance with page programming is 10
4
cycles (1%
cumulative failure rate) and the data retention time is more than
10 years when a device is programmed less than 10
4
cycles.
AS58LC1001
Rev. 1.8 11/10
Micross Components reserves the right to change products or specifications without notice.
3
EEPROM
AS58LC1001
(EXAMPLE)
Vcc
RES\
*unprogrammable
*unprogrammable
FUNCTIONAL DESCRIPTION (continued)
DATA PROTECTION (continued)
2. Data protection at Vcc on/off.
When RES\ is low, the EEPROM cannot be erased
and
programmed. Therefore, data can be protected by
keeping RES\ low when Vcc is switched. RES\ should be
high during programming because it does not provide a latch
function. When Vcc is turned on or off, noise on the control
pins generated by external circuits (CPU, etc.) may turn the
EEPROM to programming mode by mistake. To prevent this
unintentional programming, the EEPROM must be kept in an
unprogrammable, standby or readout state by using a CPU
reset signal to RES\ pin.
In addition, when RES\ is kept high at Vcc on/off timing,
the input level of control pins (CE\, OE\, WE\) must be held
as CE\=Vcc or OE\=LOW or WE\=Vcc level.
3. Software Data Protection
To protect against unintentional programming caused
by noise generated by external circuits, AS58LC1001 has a
Software data protection function. To initate Software data
protection mode, 3 bytes of data must be input, followed by
a dummy write cycle of any address and any data byte. This
exact sequence switches the device into protection mode.
Write Address
5555
2AAA
5555
Write Data
(Normal Data Input)
AA
55
A0
The Software data protection mode can be cancelled by
inputting the following 6 Bytes. This changes the AS58LC1001
to the Non-Protection mode, for normal operation.
Address
5555
2AAA
5555
5555
2AAA
5555
Data
AA
55
80
AA
55
20
AS58LC1001
Rev. 1.8 11/10
Micross Components reserves the right to change products or specifications without notice.
4
EEPROM
AS58LC1001
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V
1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V
1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55
o
C to +125
o
C
Soldering Temperature Range...............................................260
o
C
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operation section of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< 125
o
C; Vcc = 3.3V +.3V)
PARAMETER
Input High (Logic 1) Voltage
3
Input Low (Logic 0) Voltage
Input Voltage (RES\ Pin)
Input Leakage Current
4
Input Leakage (RES\ Pin)
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITION
SYMBOL
V
IH
V
IL
V
H
I
LI
I
LI
I
LO
V
OH
V
OL
MIN
2.2
-0.3
Vcc-0.5
-2
-50
-2
2.4
MAX
V
CC
+ 0.3V
0.8
V
CC
+0.3
2
10
2
0.5
UNITS
V
V
V
NOTES
9
2
4
OV < V
IN
< Vcc
RES\ = Vcc = 3.6V
Output(s) disabled, OV < V
OUT
< Vcc
I
OH
= -400 A
I
OL
= 2.1 mA
V
V
PARAMETER
CONDITIONS
I
OUT
=OmA, Vcc = 3.6V
SYM
-25
8
MAX
-30
8
-35
8
UNITS NOTES
Power Supply Current:
Operating
Cycle=1 S, Duty=100%
I
CC3
I
OUT
=OmA, Vcc = 3.6V
Cycle=MIN, Duty=100%
mA
20
20
20
CE\=Vcc, Vcc = 3.6V
Power Supply Current:
Standby
CE\=V
IH
, Vcc = 3.6V
I
CC1
100
100
100
A
I
CC2
1.5
1.5
1.5
mA
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
CONDITIONS
T
A
= 25 C, f = 1MHz
V
IN
= 0
o
SYMBOL
C
IN
Co
MAX
6
12
UNITS
pF
pF
NOTES
AS58LC1001
Rev. 1.8 11/10
Micross Components reserves the right to change products or specifications without notice.
5
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