SM5073 series
VCXO ICs with Built-in Varicap
OVERVIEW
The SM5073 series are VCXO ICs with built-in varicap diode. They use a recently developed negative-resis-
tance switching oscillation circuit, at oscillation startup and during normal oscillation, for both good oscilla-
tion startup characteristics and wide pullrange. Furthermore, it employs a CMOS process varicap diode, and
also features all the necessary VCXO structure circuit components on a single chip, forming a VCXO with just
the connection of an external crystal.
FEATURES
I
I
PACKAGE DIMENSIONS
(Unit: mm)
I
I
I
I
I
I
I
I
I
3.0 to 3.6V supply voltage range
10MHz to 60MHz operating frequency
(varies with version)
Uses negative-resistance switching function
Varicap diode built-in
Frequency divider built-in (varies with version: f
O
,
f
O
/2, f
O
/4, f
O
/8, f
O
/16, f
O
/32)
CMOS output level
50 ± 10% output duty
6mA (min) output drive capability
15pF output load capacitance C
L
Standby function
High impedance in standby mode
(oscillator continues running)
Package: 8-pin SOP (SM5073××S)
0.15
+ 0.1
−
0.05
4.4 0.2
6.2 0.3
0.695typ
5.2 0.3
0.05 0.05
1.5
0.1
1.27
0.4 0.2
APPLICATIONS
I
I
I
I
0.10
0.4 0.1
0.12
M
0 to 10
VCXO modules
Communications application
Networking application
Broadcasting application
SERIES LINEUP
Version
SM5073A×S
SM5073B×S
SM5073C×S
SM5073D×S
SM5073E×S
SM5073F×S
Typical oscillation
frequency
1
[MHz]
16
23
30
37
44
51
f
O
f
O
/2
f
O
/4
f
O
/8
f
O
/16
f
O
/32
Output frequency
SM5073×1S
SM5073×2S
2
SM5073×3S
2
SM5073×4S
2
SM5073×5S
2
SM5073×6S
2
1. The typical oscillation frequency is the oscillation frequency criteria for use when selecting the device version. Note that the oscillation
characteristics and pullability vary with the crystal used and the mounting conditions. Even for the same frequency, the optimal version can vary
with crystal characteristics, so careful evaluation should be exercised when selecting the device version.
2. These versions are produced after receiving a purchase order. Please ask our Sales & Marketing section for further detail.
ORDERING INFORMATION
Device
SM5073××S
Package
8-pin SOP
SEIKO NPC CORPORATION —1
SM5073 series
PINOUT
(Top view)
XTN
VC
INHN
VSS
1
2
3
4
8
7
6
5
XT
VDD
NC
Q
PIN DESCRIPTION
Number
1
2
3
4
5
6
7
8
Name
XTN
VC
INHN
VSS
Q
NC
VDD
XT
I/O
O
I
I
–
O
–
–
I
Description
Amplifier output pin
Oscillation frequency control
voltage input pin
Output state control voltage
input pin
(
−
) supply pin
Output pin
No connection
(+) supply pin
Amplifier input pin
Crystal connection pins.
Crystal is connected between XT and XTN.
Output frequency determined by internal circuit to one of f
O
, f
O
/2,
f
O
/4, f
O
/8, f
O
/16, f
O
/32
Function
Crystal connection pins.
Crystal is connected between XT and XTN.
Positive polarity (frequency increases with increasing voltage)
High-impedance output when LOW, pull-up resistor built-in
SEIKO NPC CORPORATION —2
SM5073 series
BLOCK DIAGRAM
R
f
C
G
1/2
1/2
1/2
1/2
1/2
XT
R
D
C
V
C
C
C
D
Q
XTN
R
B
1
VDD
R
B
2
VC
R
UP
VSS
INHN
Note. ESD of XT pin is inferior to other pins.
ESD of all pins excluding XT pin is equivalent to that of our other oscillator products.
VC pin has no protection circuit at V
DD
side. (See figure below.)
VC
Internal circuit
SEIKO NPC CORPORATION —3
SM5073 series
ABSOLUTE MAXIMUM RATINGS
V
SS
= 0V unless otherwise noted.
Parameter
Supply voltage range
Input voltage range
Output voltage range
Operating temperature range
Storage temperature range
Output current
Power dissipation
1. It should not exceed + 7.0V.
Symbol
V
DD
All input pins excluding VC pin
V
IN
V
OUT
T
opr
T
STG
I
OUT
P
D
VC pin
Conditions
Rating
−0.5
to 7.0
−0.5
to V
DD
+ 0.5
−0.5
to V
DD
+ 2.5
1
−0.5
to V
DD
+ 0.5
−40
to +85
−55
to +125
20
500
Unit
V
V
V
V
°C
°C
mA
mW
RECOMMENDED OPERATING CONDITIONS
V
SS
= 0V, f = 10MHz to 60MHz, C
L
≤
15pF unless otherwise noted.
Rating
Parameter
Operating supply voltage
Input voltage
Operating temperature
Symbol
V
DD
V
IN
T
OPR
Conditions
Min
3.0
V
SS
–40
Typ
–
–
–
Max
3.6
V
DD
+85
V
V
°C
Unit
SEIKO NPC CORPORATION —4
SM5073 series
ELECTRICAL CHARACTERISTICS
SM5073A×S
V
DD
= 3.0 to 3.6V, V
C
= 1.65V, V
SS
= 0V, Ta = –40 to +85°C, unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Symbol
V
OH
V
OL
I
Z
V
IH
V
IL
Conditions
Min
Q: Measurement circuit 1, I
OH
= 6mA
Q: Measurement circuit 1, I
OL
= 6mA
Q: Measurement circuit 6,
INHN = LOW
INHN
INHN
SM5073A1S
Current consumption
I
DD
Measurement circuit 2, load
circuit 1, INHN = open,
C
L
= 15pF,
f = 16MHz
Measurement circuit 3
Design value. A monitor pattern on a wafer is
tested.
Measurement circuit 4
Design value. A monitor pattern on a wafer is
tested.
Design value. A monitor
pattern on a wafer is tested.
V
C
= 0.3V
V
C
= 3.0V
SM5073A2S
SM5073A3S
SM5073A4S to 6S
INHN pull-up resistance
R
UP
R
f
R
D
Built-in resistance
R
B1
R
B2
V
OH
= V
DD
V
OL
= V
SS
2.5
–
–
–
0.7V
DD
–
–
–
–
–
50
150
0.67
100
50
11.0
2.4
25.5
Design value. A monitor pattern on a wafer is
tested.
34
8.5
Typ
2.75
0.2
–
–
–
–
8
7.5
7
7
100
300
0.96
200
100
14.4
4.0
30
40
10
Max
–
0.4
10
10
–
0.3V
DD
23
22.5
22
22
180
540
1.25
360
180
17.8
5.6
34.5
46
11.5
V
V
µA
µA
V
V
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
k
Ω
pF
pF
pF
pF
pF
Unit
C
V
Built-in capacitance
C
G
C
D
C
C
SEIKO NPC CORPORATION —5
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