RMPA5251
October 2004
RMPA5251
4.90–5.85 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50
Ω
minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
• 2.5% EVM at 18.0dBm modulated power out
• 3.3V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with >18dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
• Internally matched to 50
Ω
• Minimal external components
• Optimized for use in IEEE 802.11a
WLAN applications
Device
Features
• 4.9 to 5.85 GHz Operation
• 27dB small signal gain
• 26dBm output power @ 1dB compression
Electrical Characteristics
1,3
802.11a OFDM
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
10
Supply Voltage
Gain
Total Current @ 18dBm P
OUT
Total Current @ 19dBm P
OUT
EVM @ 18dBm P
OUT2
EVM @ 19dBm P
OUT2
Detector Output @ 19dBm P
OUT
Detector Threshold
4
P
OUT
Spectral Mask Compliance
5, 6
Minimum
4.90
3.0
Typical
3.3
27
250
260
2.5
3.5
450
5.0
21.0
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
28
240
250
2.5
3.5
500
5.0
20.0
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics
1
Single Tone
Parameter
Frequency
10
Supply Voltage
Gain
7
Total Quiescent Current
7, 11
Minimum
4.90
3.0
Typical
3.3
27
140–220
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
27.5
140–220
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50
Ω
system.
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. P
OUT
measured at P
IN
corresponding to power detection threshold.
5. Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. P
IN
is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
Electrical Characteristics
12
Single Tone (Continued)
Parameter
Bias Current at pin VM
8
P1dB Compression
7
Current @ P1dB Comp
7
Standby Current
9
Shutdown Current (VM=0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector P
OUT
Threshold
3, 4
Frequency
2
nd
Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic Shutdown Control Pin (VL):
Device Off
Device On
Logic Current
Turn-on Time
13
Turn-off Time
Spurious (Stability)
14
4.90
-30
-35
0.0
2.4
10
<1
<1
-65
0.8
2.0
Minimum
Typical
16
26
425
1.9
<1.0
12
10
2
7.0
5.35
5.15
-30
-35
0.0
2.4
100
<1
<1
-65
0.8
Maximum
Minimum
Typical
16
26
425
1.9
<1.0
16
10
2
7.0
5.85
Maximum
Unit
mA
dBm
mA
mA
µA
dB
dB
V
dBm
GHz
dBc
dBc
V
V
µA
µS
µS
dBc
2.0
Absolute Ratings
15
Symbol
VC1, VC2
IC1–IC3
Parameter
Positive Supply Voltage
Supply Current
IC1
IC2
IC3
Voltage Mirror
Logic Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Value
4.0
50
150
500
4
5
10
-40 to +85
-55 to +150
Units
V
mA
mA
mA
V
V
dBm
°C
°C
VM
V
L
P
IN
T
CASE
T
STG
Notes:
3. Not measured 100% in production.
4. P
OUT
measured at P
IN
corresponding to power detection threshold.
5. Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. P
IN
is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
12. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50É
∂
system
13. Measured from Device On signal turn on, (Logic High) to the point where RF POUT stabilizes to 0.5dB.
14. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
15. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
Functional Block Diagram
P1
16
VM2
15
VC2
14
VC3
13
N/C
1
BIAS
CONTROL
VOLTAGE
DETECTOR
12
DT2
VM1
2
11
DT1
VC1
3
OUTPUT
MATCH
10
RF OUT
RF IN
4
INPUT
MATCH
9
N/C
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
N/C
VM1
VC1
RF IN
N/C
N/C
VM3
N/C
N/C
RF OUT
DT1 (Vdet)
DT2
VC3
VC2
VM2
P1 (Logic)
5
N/C
6
N/C
7
VM3
8
N/C
Application Information
The RMPA5251 can be optimized to work over 2 frequency ranges, 4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High
Band).
Using the 2 external component configurations described on the next page, the RMPA5251 can be optimized to give the
best EVM, power and gain over a specified bandwidth.
The data on sheets 7–9 shows the performance when the evaluation board is configured for either low or high band
performance.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
Evaluation Board Schematic
5251
YWWX
Backside Ground
Note:
*C3 only used in Low Band Configuration
All Mirrors and VC connections can be separate
or connected to a common rail.
Evaluation Board Bill of Materials
RMPA5251 4.90 to 5.35 GHz Operation Eval Board BOM (Low Band)
No.
1
2
3
4
5
6
7
8
9
Ref
C1,C2
C3
C4
R1,R2
L1,L2,L3
B1
J1,J2
J3
A1
Value Unit Qty Size
10
1
100
10K
10
µF
pF
pF
Ω
nH
2
1
1
2
3
1
2
11
1
Description
MFG
Murata
Murata
Murata
IMS
Part No.
Comments
0805 10µF Capacitor
0603 1pF Capacitor
0402 100pF Capacitor
0402 10K
Ω
Resistor
0402 10nH Inductor
Fixture Board
Jack End Launch
SMA
Right Angle
Single Header
Packaged MMIC
GRM21BR60J106KE01D Decoupling
Capacitor
GRM39C0G010B100V
GRM1885C1H101JA01D Detector
Capacitor
RCI-0402-1002J
Detector
Resistor
RF Choke
Toko
LLV1005FB10NJ
Crown Circuits G657432
Johnson
Components
Digikey
Fairchild
142-0701-841
S1322-12-ND
RMPA5251
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
RMPA5251 5.15 to 5.85 GHz Operation Eval Board BOM (High Band)
No.
1
2
3
4
5
6
7
8
9
Ref
C1,C2
C4
R1,R2
L1,L3
L2
B1
J1,J2
J3
A1
Value Unit Qty Size
10
100
10K
10
15
µF
pF
Ω
nH
nH
2
1
2
2
1
1
2
11
1
Description
MFG
Murata
Murata
IMS
Toko
Toko
Crown Circuits
Johnson
Components
Digikey
Fairchild
Part No.
GRM21BR60J106K
Comments
0805 10 µF Capacitor
0402 100 pF Capacitor
0402 10 K
Ω
Resistor
0402 10 nH Inductor
0402 15 nH Inductor
Fixture Board
Jack End Launch
SMA
Right Angle Single
Header
Packaged MMIC
Decoupling
Capacitor
GRM1885C1H101JA01D Detector
Capacitor
RCI-0402-1002J
LLV1005FB10NJ
LLV1005FB15NJ
G657432
142-0701-841
S1322-12-ND
RMPA5251
Detector Resistor
RF Choke
RF Choke
Evaluation Board Layout
VL
*
C1
L2
C3 L3
J1
R1
L1
C2
C4
A1
R2
J2
Not Used
J3
= component
Actual Board Size = 2.0" x 1.5"
= Jumper/short connection
*
VL is labeled P1 on Eval Board
Evaluation Board Operation
Recommended turn-on sequence:
1) Connect RF ports J1, J2 to RF test equipment.
2) Connect common ground terminal to the Ground (GND) pin on the board.
3) Connect logic control pin VL to positive supply.
4) Connect terminals VC1, VC2 and VC3 together and connect to positive supply (VC).
5) Connect terminals VM1, VM2 and VM3 together and connect to positive supply (VM).
6) Connect voltmeter to Detector Output, pin DT1.
7) Connect pin DT2 to ground.
8) Apply high voltage of +2.4V to logic control pin VL. (On)
9) Apply positive voltage of 3.3V to VC1, VC2 and VC3 (first, second and third stage collector).
10) Apply positive voltage of 3.3V to VM1, VM2 and VM3 (bias networks)
2
.
11) At this point, you should expect to observe the following positive currents flowing into the pins:
Pin
VL
VC (Total)
VM (Total)
©2004 Fairchild Semiconductor Corporation
Current
~150 µA
~184 mA
~16 mA
RMPA5251 Rev. D
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