RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
January 2005
RMPA2455
2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Features
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30 dB small signal gain
30 dBm output power @ 1 dB compression
3% EVM at 22 dBm modulated power out
5.0 V positive collector supply operation
Two power saving shutdown options (bias and logic control)
Integrated power detector with 20 dB dynamic range
Low profile 16 pin 3 x 3 x 0.9 mm leadless package
Internally matched to 50
Ω
and DC blocked RF input/output
Optimized for use in 802.11b/g Access Point applications
General Description
The RMPA2455 power amplifier is designed for high
performance WLAN access point applications in the 2.4–2.5
GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to 50
Ω
minimizes next level PCB space and allows for simplified
integration. The on-chip detector provides power sensing
capability while the logic control provides power saving
shutdown options. The PA’s low power consumption and
excellent linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics
1
802.11g OFDM Modulation
(with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Gain
Total Current @ 22dBm P
OUT
EVM @ 22dBm P
OUT
Detector Threshold
3
Notes:
1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, T
A
= 25°C, PA is constantly biased, 50
Ω
system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
Min
2.4
4.5
2.8
Typ
5.0
3.3
30
195
3.0
960
4
Max
2.5
5.5
3.6
Units
GHz
V
V
dB
mA
%
mV
dBm
2
Detector Output @ 22dBm P
OUT
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA2455 Rev. D
RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Electrical Characteristics
1
Single Tone
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Gain
Total Quiescent Current
Bias Current at pin VM12
2
P1dB Compression
Standby Current
3
Shutdown Current (VM12 = 0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector P
OUT
Threshold
7
2nd Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic
Shutdown Control (V
L
):
Device Off, Logic High Input
Device On, Logic Low Input
Logic Current
Turn-on Time
4
Turn-off Time
Spurious (Stability)
5
2.0
2.4
0.0
150
<1
<1
-65
0.8
V
V
µA
µS
µS
dBc
Min
2.4
4.5
2.8
Typ
5.0
3.3
30
140
17
30
0.7
<1.0
12
10
4
6
-40
-40
Max
2.5
5.5
3.6
Units
GHz
V
V
dB
mA
mA
dBm
mA
µA
dB
dB
V
dBm
dBc
dBc
Absolute Ratings
6
Symbol
VC1, VC2
IC1, IC2
Supply Current
IC1
IC2
Positive Bias Voltage
Logic Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Parameter
Positive Supply Voltage
Ratings
6
120
700
4.0
5
10
-40 to +85
-55 to +150
Units
V
mA
mA
V
V
dBm
°C
°C
VM12
V
L
P
IN
T
CASE
T
STG
Notes:
1. VC1,VC2 = 5.0V, VM12 = 3.3V, T
C
= 25°C, 50
Ω
system.
2. Mirror bias current is included in the total quiescent current.
3. VL is set to Input Logic Level High for PA Off operation.
4. Measured from Device On signal turn on (Logic Low) to the point where RF P
OUT
stabilizes to 0.5dB.
5. Load VSWR is set to 8:1 and the angle is varied 360 degrees. P
OUT
= -30dBm to P1dB.
6. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values
7. P
OUT
measured at P
IN
corresponding to power detection threshold.
2
RMPA2455 Rev. D
www.fairchildsemi.com
RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Functional Block Diagram
VDET
VM12
VC2
N/C
16
15
14
13
Pin
1
2
Description
V
L
(logic)
RF IN
RF IN
N/C
VC1
N/C
N/C
N/C
N/C
RF OUT
RF OUT
N/C
VC2
VDET
N/C
VM12
V
L
1
BIAS
VOLTAGE
DETECTOR
12
N/C
3
4
5
RF IN
2
INPUT
MATCH
INT STG
MATCH
OUTPUT
MATCH
11
RF OUT
6
7
8
RF IN
3
10
RF OUT
9
10
N/C
4
9
N/C
11
12
13
14
5
6
7
8
15
VC1
N/C
N/C
N/C
Backside Ground
16
3
RMPA2455 Rev. D
www.fairchildsemi.com
RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Performance Data
802.11g OFDM
Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Measured EVM Vs. Modulated Output Power
VC1, VC2 = 5.0V, VM12 = 3.3V
6
5
4
2.4 GHz
3
2
1
0
0
2
4
6
8
10
12
14
Includes 0.8% System Level EVM
Total Current Vs. Modulated Output Power
VC1, VC2 = 5.0V, VM12 = 3.3V
220
200
Total Current (mA)
180
160
140
120
100
0
2
4
6
8
10
12
14
16
18
20
22
24
Modulated Output Power
Total Measured EVM (%)
2.45 GHz
2.5 GHz
2.4 GHz
2.45 GHz
2.5 GHz
16
18
20
22
24
Modulated Output Power (dBm)
Gain Vs. Modulated Output Power
VC1, VC2=5.0V, VM12=3.3V T=25C
31
30
Detector Voltage Vs. Modulated Output Power
VC1, VC2 =5.0V, VM12=3.3V T=25C
3000
2500
28
Gain (dB)
27
26
Detector Voltage (mV)
29
2000
1500
1000
500
2.4 GHz
2.45 GHz
2.5 GHz
2.4 GHz
25
24
23
22
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
2.45 GHz
2.5 GHz
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
Modulated Output Power (dBm)
Modulated Output Pow er (dBm )
Total Measured EVM Vs. Modulated Output Power
VC1, VC2 = 4.5, 5.0 and 5.5V, VM12 = 3.3V F=2.45 GHz
6
5
5
Total Measured EVM (%)
Total Measured EVM (%)
4.5 V
4
3
2
1
0.8% System Level EVM Included
Typical EVM Vs. Modulated Power Out
VC1, VC2=5.0V, VM12 =2.8 to 3.3V F=2.45 GHz T=25C
VM=2.8V
4
VM=2.9V
VM=3.0V
3
VM=3.1V
VM=3.2V
2
VM=3.3V
5.0 V
5.5 V
1
Includes 0.8% System Level EVM
0
0
2
4
6
8
10
12
14
16
18
20
22
24
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Modulated Output Power (dBm)
Modulated Output Power (dBm)
4
RMPA2455 Rev. D
www.fairchildsemi.com
RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Performance Data
802.11g OFDM
Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Bias Current Vs. Modulated Output Power
VC1, VC2=5.0V, VM12 =2.8 to 3.3V F=2.45 GHz T=25C
300
VM=2.8V
VM=3.0V
VM=2.9V
VM=3.1V
Modulated Gain and Total Quiescient Current Vs. Mirror Voltage (VM)
30
29
Modulated Gain (dB)
28
27
Current
26
25
24
23
80
60
40
20
2.8
2.9
3
3.1
3.2
3.3
Gain
160
140
120
100
200
VM=3.2V
VM=3.3V
150
100
50
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Modulated Output Power (dBm)
Mirror Voltage (Volts)
Single Tone
Gain Vs. Single Tone Output Power
VC1, VC2 = 5.0V, VM12 = 3.3V
33
32
31
30
Gain (dB)
Sij (dB)
20
10
0
S22
S-Parameters
VC=5.0V VM12=3.3V T=25C
40
30
S21
29
28
27
26
25
24
23
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
Single Tone Output Power (dBm)
2.4 GHz
2.45 GHz
2.5 GHz
-10
-20
S11
-30
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Frequency (GHz)
5
RMPA2455 Rev. D
www.fairchildsemi.com
Total Quiescent Current (mA)
250
Total Bias Current (mA)
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