RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module
April 2005
RMPA0965
Cellular CDMA, CDMA2000-1X and WCDMA
PowerEdge™ Power Amplifier Module
Features
■
Single positive-supply operation with low power and
shutdown modes
■
40% CDMA/WCDMA efficiency at +28 dBm average output
power
■
52% AMPS mode efficiency at +31 dBm output power
■
Compact lead-free compliant LCC package
(3.0 x 3.0 x 1.0 mm)
■
Internally matched to 50 Ohms and DC blocked RF
input/output
■
Meets CDMA2000-1XRTT/WCDMA performance require-
ments
■
Meets HSDPA performance requirements
General Description
The RMPA0965 power amplifier module (PAM) is designed for
cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and
HSDPA applications. The 2 stage PAM is internally matched to
50 Ohms to minimize the use of external components and fea-
tures a low-power mode to reduce standby current and DC
power consumption during peak phone usage. High power-
added efficiency and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1 1
RF IN 2
Vmode 3
DC BIAS CONTROL
Vref 4
INPUT
MATCH
OUTPUT
MATCH
8 Vcc2
7 RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA0965 Rev. F
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module
Absolute Ratings
1
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
T
STG
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Parameter
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Symbol
f
SSg
Gp
Po
PAEd
CDMA Operation
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
Itot
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
ACPR1
ACPR2
±885KHz Offset
±1.98MHz Offset
-50
-52
-60
-70
30
52
2.0:1
4
-137
-30
-60
10:1
-30
60
5
1
8
5
85
°C
mA
mA
µA
Vmode
≥
2.0V
Po
≤
+28dBm
No applied RF signal.
2.5:1
dB
dBm/Hz Po
≤
+28dBm; 869 to 894MHz
dBc
dBc
Po
≤
+28dBm
Load VSWR
≤
5.0:1
No permanent damage.
dBc
dBc
dBc
dBc
dB
%
28
16
40
9
25
470
130
29
30
29
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
Po = 0dBm
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
Vmode = 0V
Vmode
≥
2.0V
Vmode = 0V
Vmode
≥
2.0V
Vmode
≥
2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode
≥
2.0V
IS-95 A/B Modulation
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
Po = +31dBm
Po = +31dBm
Parameter
Operating Frequency
Min
824
Typ
Max
849
Units
MHz
Comments
AMPS Operation
Gp
PAEa
VSWR
NF
Rx No
2fo-5fo
S
Tc
Iccq
Iref
Icc(off)
Gain
Power-Added Efficiency (analog)
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
3
Spurious
Outputs
2, 3
Ruggedness w/ Load Mismatch
3
Case Operating Temperature
Quiescent Current
Reference Current
Shutdown Leakage Current
DC Characteristics
General Characteristics
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR
≤
1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
2
RMPA0965 Rev. F
www.fairchildsemi.com
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module
Performance Data
RMPA0965 Cellular 3x3mm
2
PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
35
34
33
32
-40
-42
-44
RMPA0965 Cellular 3x3mm
2
PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
ACPR1 (dBc)
-46
-48
-50
-52
-54
-56
-58
-60
Gain (dB)
31
30
29
28
27
26
25
824
836.5
849
824
836.5
849
Frequency (MHz)
Frequency (MHz)
RMPA0965 Cellular 3x3mm
2
PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
45
44
43
42
-50
-52
-54
-56
-58
-60
-62
-64
-66
-68
-70
836.5
849
RMPA0965 Cellular 3x3mm
2
PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
PAE (%)
41
40
39
38
37
36
35
824
ACPR2 (dBc)
824
836.5
849
Frequency (MHz)
Frequency (MHz)
RMPA0965 Cellular 3x3mm
2
PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
500
490
480
470
Icc (mA)
460
450
440
430
420
410
400
824
836.5
849
Frequency (MHz)
3
RMPA0965 Rev. F
www.fairchildsemi.com
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF
power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers fre-
quently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power
consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply
voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin.
High-efficiency DC-DC converters are now available to implement switched-voltage operation.
With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal
down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a
typical ACPR1 of –52dBc and ACPR2 of less than –61dBc. Operation at even lower levels of Vcc supply voltage are possible with a
further restriction on the maximum RF output power.
Recommended Operating Conditions
Symbol
f
Vcc1, Vcc2
Vref
Supply Voltage
Reference Voltage
(Operating)
(Shutdown)
Bias Control Voltage
(Low-Power)
(High-Power)
Linear Output Power
(High-Power)
(Low-Power)
Case Operating Temperature
-30
Parameter
Operating Frequency
Min
824
3.0
2.7
0
1.8
0
Typ
3.4
2.85
Max
849
4.2
3.1
0.5
3.0
0.5
+28
+16
+85
Units
MHz
V
V
V
V
V
dBm
dBm
°C
Vmode
2.0
Pout
Tc
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical)
2) Vref = 2.85V (typical)
3) High-Power: Vmode = 0V (Pout > 16 dBm)
Low-Power: Vmode = 2V (Pout < 16 dBm)
4
RMPA0965 Rev. F
www.fairchildsemi.com
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module
Evaluation Board Layout
1
5
6
3
6
8
2
0965
XYTT
Z
4
7
5
Materials List
Qty
1
2
7
Ref
2
2
2
1
1
1
A/R
A/R
Item No.
1
2
3
4
5
5 (Alt)
6
7
7 (Alt)
8
9
10
Part Number
G657691-1 V1
#142-0701-841
#2340-5211TN
F100001
GRM39X7R102K50V
ECJ-1VB1H102K
C3216X5R1A335M
GRM39Y5V104Z16V
ECJ-1VB1C104K
GRM39X7R331K50V
SN63
SN96
PC Board
Description
SMA Connector
Terminals
Assembly, RMPA0965
1000pF Capacitor (0603)
1000pF Capacitor (0603)
3.3µF Capacitor (1206)
0.1µF Capacitor (0603)
0.1µF Capacitor (0603)
330 pF Capacitor (0603)
Solder Paste
Solder Paste
Vendor
Fairchild
Johnson
3M
Fairchild
Murata
Panasonic
TDK
Murata
Panasonic
Murata
Indium Corp.
Indium Corp.
Evaluation Board Shematic
3.3
µF
Vcc1
SMA1
RF IN
50 Ohm
TRL
Vmode
1000
pF
Vref
4
9
0.1
µF
(package
base)
1000 pF
1
2
330 pF
8
3.3
µF
Vcc2
50 Ohm TRL
SMA2
RF OUT
0965
XYTT
5
7
Z
3
5,6
www.fairchildsemi.com
RMPA0965 Rev. F
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