PD - 96981F
IRF6635
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHs compliant containing no lead or bromide
V
DSS
V
GS
R
DS(on)
R
DS(on)
Low Profile (<0.7 mm)
30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
47nC
17nC
4.7nC
48nC
29nC
1.8V
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for SyncFET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
MX
DirectFET ISOMETRIC
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635
has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
10
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
e
h
h
k
Ãe
f
VGS, Gate-to-Source Voltage (V)
30
±20
32
25
180
250
200
25
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
ID = 25A
VDS = 24V
VDS = 15V
A
mJ
A
8
6
4
2
0
0
1
2
T J = 25°C
3
4
5
6
7
ID = 32A
T J = 125°C
8
9
10
60
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
Starting T
J
= 25°C, L = 0.63mH, R
G
= 25Ω, I
AS
= 25A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
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1
11/16/05
IRF6635
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
24
1.3
1.8
1.8
-6.1
–––
–––
–––
–––
–––
47
12
4.7
17
13
22
29
1.0
21
13
33
8.3
5970
1280
600
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
–––
–––
1.8
2.4
2.35
–––
1.0
150
100
-100
–––
71
–––
–––
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 32A
g
V
GS
= 4.5V, I
D
= 25A
g
V
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 25A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 25A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 25A
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 250µA
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
20
48
250
1.0
30
72
V
ns
nC
Min.
–––
Typ. Max. Units
–––
110
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 25A
di/dt = 500A/µs
g
See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6635
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
h
h
k
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
hl
il
jl
kl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
gÃ
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
2
τ
3
τ
4
τ
4
τ
A
1
Ri (°C/W)
0.6784
17.299
17.566
9.4701
τi
(sec)
0.001268
0.033387
0.508924
11.19309
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
t1 , Rectangular Pulse Duration (sec)
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
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Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
IRF6635
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
10
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
100
1000
0.1
1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
1.5
ID = 32A
ID, Drain-to-Source Current
(Α)
1.0
1
V GS = 4.5V
V GS = 10V
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 7.
Normalized On-Resistance vs. Temperature
30
T J = 25°C
Typical RDS(on) Normalized ( mΩ)
25
20
15
10
5
0
C, Capacitance(pF)
10000
Ciss
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
20
60
100
140
180
220
260
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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IRF6635
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
10msec
100µsec
1msec
10
100msec
1
T A = 25°C
T J = 150°C
Single Pulse
0.01
0.10
1.00
10.00
100.00
10
1
T J = 150°C
T J = 25°C
T J = -40°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.1
VDS , Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
200
VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 250µA
175
150
125
100
75
50
25
0
25
50
75
100
125
150
T C , Case Temperature (°C)
ID, Drain Current (A)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Threshold Voltage vs. Temperature
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
9.1A
11A
BOTTOM 25A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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