PD - 96905B
AUTOMOTIVE MOSFET
IRF1405ZS-7P
IRF1405ZL-7P
Features
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
G
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I
D
= 120A
D
2
Pak 7 Pin
TO-263CA 7 Pin
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
150
100
120
590
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
h
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
j
Parameter
Typ.
–––
0.50
Max.
0.65
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
12/6/06
IRF1405ZS/L-7P
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
SMD
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.054
3.7
–––
–––
–––
–––
–––
–––
150
37
64
16
140
170
130
4.5
7.5
5360
1310
340
6080
920
1700
–––
–––
4.9
4.0
–––
20
250
200
-200
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 88A
V V
DS
= V
GS
, I
D
= 150µA
S V
DS
= 25V, I
D
= 88A
µA V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
nC I
D
= 88A
V
DS
= 44V
V
GS
= 10V
ns V
DD
= 28V
I
D
= 88A
R
G
= 5.0Ω
V
GS
= 10V
D
nH Between lead,
e
e
d
6mm (0.25in.)
from package
G
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
63
160
150
A
590
1.3
95
240
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
di/dt = 100A/µs
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.064mH, R
G
= 25Ω, I
AS
= 88A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
Solder mounted on IMS substrate.
2
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IRF1405ZS/L-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
10
1
100
1000
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs, Forward Transconductance (S)
150
125
T J = 25°C
100
75
50
25
0
0
25
50
75
100 125 150 175 200
ID,Drain-to-Source Current (A)
V DS = 10V
300µs PULSE WIDTH
T J = 175°C
ID, Drain-to-Source Current
(Α)
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
≤60µs
PULSE WIDTH
0
2
4
6
8
10
12
0.1
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRF1405ZS/L-7P
100000
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12.0
ID= 88A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 44V
VDS= 28V
C, Capacitance(pF)
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
1000
100
1msec
10
1
0.1
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Tc = 25°C
Tj = 175°C
Single Pulse
DC
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
T J = 175°C
100
10
T J = 25°C
1
0.0
0.5
1.0
1.5
VGS = 0V
2.0
2.5
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1405ZS/L-7P
150
125
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 88A
VGS = 10V
2.0
100
75
50
25
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
Ri (°C/W)
0.1707
0.1923
0.2885
τi
(sec)
0.000235
0.000791
0.008193
τ
1
τ
2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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