PD - 95880C
AUTOMOTIVE MOSFET
IRF3805
IRF3805S
IRF3805L
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 55V
R
DS(on)
= 3.3mΩ
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
S
I
D
= 75A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
TO-220AB
IRF3805
D
2
Pak
IRF3805S
Max.
220
160
75
890
330
2.2
± 20
TO-262
IRF3805L
Units
A
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Ã
h
730
940
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
y
y
Typ.
Max.
0.45
–––
62
40
Units
°C/W
i
i
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
j
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1
7/17/07
IRF3805/S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.051
2.6
–––
–––
–––
–––
–––
–––
190
52
72
20
150
87
93
4.5
7.5
7960
1260
630
4400
980
1550
–––
–––
3.3
4.0
–––
20
250
200
-200
290
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 75A
V
V
μA
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 75A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A
R
G
= 2.6
Ω
V
GS
= 10V
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
36
47
75
A
890
1.3
54
71
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 28V
di/dt = 100A/μs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF3805/S/L
1000
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
4.5V
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
200
TJ = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
TJ = 25°C
160
TJ = 175°C
100.0
120
10.0
TJ = 25°C
1.0
80
VDS = 20V
0.1
4.0
5.0
6.0
40
≤
60μs PULSE WIDTH
7.0
8.0
VDS = 10V
380μs PULSE WIDTH
0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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IRF3805/S/L
14000
12000
10000
8000
6000
4000
2000
0
1
10
100
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 75A
VGS, Gate-to-Source Voltage (V)
VDS = 44V
VDS= 28V
16
C, Capacitance (pF)
Ciss
12
8
Coss
Crss
4
0
0
50
100
150
200
250
300
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
ID, Drain-to-Source Current (A)
TJ = 175°C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.0
1000
100
100μsec
10.0
TJ = 25°C
1.0
10
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
100
1000
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF3805/S/L
240
LIMITED BY PACKAGE
200
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 75A
VGS = 10V
160
120
80
40
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
τ
2
0.01
τ
J
Ri (°C/W)
τi
(sec)
0.2387 0.001016
0.2105
0.012816
τ
1
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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