电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SMAJ58

产品描述400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
产品类别分立半导体    二极管   
文件大小70KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SMAJ58在线购买

供应商 器件名称 价格 最低购买 库存  
SMAJ58 - - 点击查看 点击购买

SMAJ58概述

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

SMAJ58规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PDSO-C2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性UL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
最大击穿电压78.7 V
最小击穿电压64.4 V
最大钳位电压103 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值反向功率耗散400 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
最大重复峰值反向电压58 V
表面贴装YES
技术AVALANCHE
端子面层PURE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

SMAJ58文档预览

SMAJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
400 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
400 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle (300W above 78V).
SMA/DO-214AC
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.103(2.61)
.078(1.99)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.064 gram
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote 1)
O
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3)
Maximum Instantaneous Forward Voltage at 25.0A
for Unidirectional Only
Operating and Storage Temperature Range
Symbol
P
PK
Pd
I
FSM
V
F
Value
Minimum 400
1
40.0
3.5
Units
Watts
Watts
Amps
Volts
O
T
J
, T
STG
-55 to + 150
C
O
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above
T
A
=25 C
Per Fig. 2.
2. Mounted on 0.2 x 0.2" (5 x 5mm) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per
Minute Maximum.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix forTypes SMAJ5.0 through Types SMAJ170.
2. Electrical Characteristics Apply in Both Directions.
- 530 -
RATINGS AND CHARACTERISTIC CURVES (SMAJ SERIES)
FIG.1- PEAK PULSE POWER RATING CURVE
PEAK PULSE POWER (Pppm) or CURRENT (lpp)
DERATING IN PERCENTAGE, %
100
100
FIG.2- PULSE DERATING CURVE
Pppm, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
A
=25
0
C
75
10
50
1.0
25
0.2" sq 5.0mm
2
COPPER PAD AREAS
0.1
0.1 s
1.0 s
10 s
100 s
1.0ms
10ms
0
0
25
50
75
100
125
O
150
175
200
td. PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE. C
FIG.3- PULSE WAVEFORM
150
50
FIG.5- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
lppm, PEAK PULSE CURRENT %
PULSE WIDTH (td) is DEFINED
tr=10 sec. AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
100
40
8.3ms Single Half Sine Wave
JEDEC Method
TJ=TJ max.
PEAK VALUE
lppm
HALF VALUE- lpp
2
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
30
20
50
10
0
0
td
1.0
2.0
t, TIME, ms
3.0
4.0
0
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
10,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
Cj, JUNCTION CAPACITANCE, pF
1,000
MEASURED AT
ZERO BIAS
100
MEASURED AT
STAND-OFF
VOLTAGE,V
WM
10
1
10
V(BR), BREAKDOWN VOLTAGE. (V)
100
200
- 531 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device
Device
Marking
Code
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
CL
CM
CN
CP
CQ
CR
CS
CT
Working Peak
Reverse
Voltage
V
WM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
Breakdown Voltage
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
V(
BR
) (Volts)
at I
T
Min.
Max.
6.40
7.30
6.40
7.00
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.3
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
(Note 5)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
Maximum
Peak Pulse
Surge Current
I
PPM
(Note 5)(Amps)
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
Maximum
Reverse
Leakage
at V
WM
I
D
(uA)
800
800
800
800
500
500
200
200
100
100
50.0
50.0
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
- 532 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device
Device
Marking
Code
Working Peak
Reverse
Voltage
V
WM
(Volts)
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Breakdown Voltage
SMAJ45
CU
SMAJ45A
CV
SMAJ48
CW
SMAJ48A
CX
SMAJ51
CY
SMAJ51A
CZ
SMAJ54
RD
SMAJ54A
RE
SMAJ58
RF
SMAJ58A
RG
SMAJ60
RH
SMAJ60A
RK
SMAJ64
RL
SMAJ64A
RM
SMAJ70
RN
SMAJ70A
RP
SMAJ75
RQ
SMAJ75A
RR
SMAJ78
RS
SMAJ78A
RT
SMAJ85
RU
SMAJ85A
RV
SMAJ90
RW
SMAJ90A
RX
SMAJ100
RY
SMAJ100A
RZ
SMAJ110
SD
SMAJ110A
SE
SMAJ120
SF
SMAJ120A
SG
SMAJ130
SH
SMAJ130A
SK
SMAJ150
SL
SMAJ150A
SM
SMAJ160
SN
SMAJ160A
SP
SMAJ170
SQ
SMAJ170A
SR
Notes:
O
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25 C per Fig. 2
2
2. Mounted on 5.0mm copper pads to each terminal
O
3. Lead temperature at TL=75 C
4. Measured on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000 us
6. For BI-Directional devices having VR of 10 volts and under, the IR limit is double.
V(
BR
) (Volts)
at I
T
Min.
Max.
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
(Note 5)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
Maximum
Peak Pulse
Surge Current
I
PPM
(Note 5)(Amps)
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.6
1.7
1.4
1.6
1.3
1.5
1.1
1.3
1.0
1.2
1.0
1.1
Maximum
Reverse
Leakage
at V
WM
I
D
(uA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
- 533 -
This device is designed specifically for
APPLICATION NOTES:
Recommended Pad Layout
The pad dimensions should be 0.010" longer than the
contact size in the lead axis. This allows a solder fillet
to form, see figure below. Contact factory for soldering
methods.
transiient voltage suppression from threats
generated by ESD for board levelload
switching components.
The wide leads assure a large surface contact
for good heat disipation, and a low resistance
path for surge current flow to ground.
This series is designed to optimize board
space and for use with surface mount technology
automated assembly equipment.
They can be easily mounted on printed circuit
boards and ceramic substrates to protect
sensitive components from transient voltage
damage.
Dimensions in inches and (millimeters)
- 534 -
迷茫啊,女孩子在电子信息工程方面怎么混呢
学习了四年的电子信息工程专业,毕业了,找的工作单位是做工程类的,平常基本没什么活,感觉学不到什么东西。现在公司业务向外地扩展,同意了老板调派我去外地的要求,以为是技术支持的角色,可 ......
珍惜彩云之南 工作这点儿事
【TI首届低功耗设计大赛】PM2.5传感器驱动+测试
恩,中午吃过饭,花了点时间写了一下DSM501A的驱动,蛮简单,说白了还是msp430好用,寄存器清晰,头文件定义好,都不要怎么看UG的。 先来看下这个传感器,集成度很高,用户接口也比较简单, ......
lyzhangxiang 微控制器 MCU
download imge之后不能正常启动WM
Microsoft Windows CE Bootloader Common Library Version 1.4 Built Aug 25 2009 11:32:52 Microsoft Windows WM600 Bootloader HISI K3B831 USB1.1 NDIS Built Aug 25 2009 System ready! ......
windstarcn 嵌入式系统
PWM波的问题
我用的单片机是STM32F4VET6,开发环境KEIL,PWM波硬件接的是PE14,定时器1的第四个通道。 我参考正点原子F4的例程,改了一下: //TIM1 //PWM输出初始化 //arr自动重装值 //psc时钟 ......
chenbingjy 聊聊、笑笑、闹闹
请问版主这个st的美女是谁?
怎么每份文档都有她啊? 下载 (35.86 KB) 2010-7-16 10:43 ...
boesdt stm32/stm8
电压跟随器的典型用途
在同相放大器中置R1=∞或者Rf=0,就成为了单位增益放大器,或电压跟随器。作为一个电压放大器,他的增益仅为1.然而他的特长是起到一个阻抗变换器的作。因为从他的输入端看进去,他是开路, ......
傅里叶的猫 模拟电子

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 800  2846  592  1916  1767  20  23  51  44  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved