IDC08S60CE
2
nd
generation thinQ!
TM
SiC Schottky Diode
A
Features:
Revolutionary Semiconductor Material -
Silicon Carbide
Switching Behaviour Benchmark
No Reverse Recovery / No Forward
Recovery
Temperature Independent Switching
Behaviour
1)
Qualified According to JEDEC Based on
Target Applications
Applications:
SMPS, PFC, snubber
C
Chip Type
IDC08S60CE
Mechanical Parameters
Die size
Area total
Anode pad size
Thickness
Wafer size
V
R
600V
I
Fn
8A
Die Size
1.658 x 1.52 mm
2
Package
sawn on foil
1.658x 1.52
2.52
1.421 x 1.283
355
100
2682
Photoimide
3200 nm AlSiCu
Ni Ag –system
Electrically conductive epoxy glue and soft solder
Al,
500µm
0.65mm; max 1.2mm
for original and
sealed MBB bags
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Acc. to IEC60721-3-3: Atmosphere >99% Nitrogen or inert
gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
µm
mm
mm
2
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Storage environment
1)
for open MBB
bags
1)
Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon
Technologies)
Designed for climate condition under operation according to IEC60721-3-3, class 3K3
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
IDC08S60CE
Maximum Ratings
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current,
limited by
T
vjmax
Surge non repetitive forward current,
sine halfwave
Repetitive peak forward current,
limited by thermal resistance
R
th
Non-repetitive peak forward current
i t value
Operating junction and storage
temperature range
2
Symbol
V
RRM
V
DC
I
F
I
F,SM
I
F,RM
I
F,max
2
i dt
Condition
T
v j
=25
C
Value
600
600
Unit
V
T
vj
< 150°C
T
C
=25
C,
t
P
=10
ms
T
C
=150C , t
P
=10
ms
T
C
=
100C,
T
vj
=
15 0
C
,
D =0
.1
T
C
=25
C,
t
P
=1
0µs
T
C
=25
C,
t
P
=10
ms
T
C
=150C , t
P
=10
ms
8
59
A
32
264
17
As
C
2
T
vj
,
T
stg
-55...+175
Static Characteristics
(tested on wafer),
T
vj
= 25 °C
Parameter
Reverse current
Diode forward voltage
Symbol
I
R
V
F
Conditions
V
R
=
6 00 V
I
F
=
8A
Value
min.
Typ.
1
1.5
max.
100
1.7
Unit
µA
V
Static Characteristics
(not subject to production test - verified by design / characterization)
Parameter
Reverse current
Diode forward voltage
Symbol
I
R
V
F
Conditions
V
R
=
6 00 V
, T
vj
=1
5 0 C
I
F
=
8 A,
T
vj
=
15 0
C
Value
min.
Typ.
4
1.7
max.
1000
2.1
Unit
µA
V
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
IDC08S60CE
Dynamic Characteristics
(not subject to production test - verified by design / characterization)
Parameter
Symbol
Conditions
Value
min.
Typ.
19
max.
Unit
Total capacitive charge
3)
Q
C
I
F
<=I
F,max
d
i/
dt =
2 00 A /
s
V
R
=
4 00 V
T
vj
=1
5 0° C
nC
Switching time
2)
t
c
T
vj
=1
5 0° C
V
R
=
1V
310
50
50
<10
ns
Total capacitance
C
f=
1 MH z
V
R
=
3 00 V
V
R
=
6 00 V
pF
1)
2)
J-STD20 and JESD22
t
c
is the time constant for the capacitive displacement current waveform (independent from
T
vj
=15
0° C,
I
LOAD
and
di/dt),
different from
t
rr
, which is dependent on
T
vj
=
15 0 °C,
I
LOAD
,
di/dt.
No reverse recovery time
constant
t
rr
due to absence of minority carrier inject.
3)
Only capacitive charge occurring, guaranteed by design (independent from
T
vj
,
I
LOAD
and
di/dt).
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and
mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
IDT08S60C
Rev. 2.1
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
IDC08S60CE
Chip Drawing
A
A: Anode pad
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
IDC08S60CE
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein
and/or any information regarding the application of the device, Infineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation, warranties of non-
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the
nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on
the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support
devices or systems and/or automotive, aviation and aerospace applications or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support, automotive, aviation and aerospace device or system
or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
