TD62783AFNG
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT
SILICON MONOLITHIC
TD62783AFNG
8CH HIGH−VOLTAGE HIGH SOURCE−CURRENT DRIVER
The TD62783AFNG is comprised of eight source current
Transistor Array.
These drivers are specifically designed for fluorescent display
applications.
Applications include relay, hammer and lamp and display (LED)
drivers.
Features
Package Type:
High Ouptut Voltage:
SSOP18 pin (0.65 mm pitch)
V
CE (SUS)
= 50 V (min)
Weight: 0.09 g (typ.)
Output Current (Single Output):
I
OUT
=
−500
mA (max)
Output Clamp Diodes
Single Supply Voltage
Input Compatible with Various Types of Logic
Designation:
TTL, 5 V CMOS
Pin Connection
(top view)
Schematics
(each driver)
20 kΩ
V
CC
2.6 kΩ
10 kΩ
Input
10 kΩ
5 kΩ
Output
GND
Note: The input and output parasitic diodes cannot be
used as clamp diodes.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Supply Voltage
Output Current
Input Voltage
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
CC
I
OUT
V
IN
V
R
I
F
P
D
(Note)
T
opr
T
stg
Rating
50
−500
15
50
500
0.96
−40
to 85
−55
to 150
Unit
V
mA/ch
V
V
mA
W
°C
°C
Note: On Glass Epoxy PCB (50
×
50
×
1.6 mm Cu 40%)
1
2009-11-16
TD62783AFNG
Operating Ranges
(Ta =
−40~85°C)
Characteristic
Supply Voltage
Symbol
V
CC
DC 1 Circuit
Output Current
(Note)
I
OUT
t
pw
=
25 ms, T
j
=
120°C
Ta
=
85°C, 8 Circuits
⎯
⎯
⎯
⎯
⎯
⎯
Duty
=
10 %
Duty
=
50 %
Condition
⎯
Min
⎯
⎯
⎯
⎯
⎯
2.0
0
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
5.0
⎯
⎯
⎯
⎯
Max
50
−350
−180
−38
12
15
0.8
50
400
0.4
V
V
V
mA
W
mA/ch
Unit
V
Input Voltage
Input Voltage
Output ON
Output OFF
V
IN
V
IN (ON)
V
IN(OFF)
V
R
I
F
P
D
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
(Note )
Note: On Glass Epoxy PCB
(50
×
50
×
1.6 mm Cu 40%)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Output Leakage Current
Symbol
I
CEX
Test
Circuit
1
Test Condition
V
CC
=
V
CC
max, V
IN
=
0.4 V
Ta
=
25°C
V
IN
=
V
IN (ON)
,
I
OUT
= −350
mA
Output Saturation Voltage
V
CE (sat)
2
V
IN
=
V
IN (ON)
,
I
OUT
= −225
mA
V
IN
=
V
IN (ON)
,
I
OUT
= −100
mA
Input Current
I
IN (ON)
V
IN (ON)
V
IN (OFF)
I
CC (ON)
I
R
V
F
t
ON
t
OFF
3
V
IN
=
2.4 V
V
IN
=
3.85 V
V
CE
=
2.0 V, I
OUT
= −350
mA
I
OUT
= −500 μA
V
IN
=
V
IN (ON)
, V
CC
= −50
V
V
R
=
50 V
I
F
=
350 mA
V
CC
=
V
CC
max, R
L
=
125
Ω
C
L
=
15 pF
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.8
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
36
180
⎯
⎯
⎯
⎯
⎯
0.15
3.0
Max
100
2.0
1.9
1.8
52
260
2.0
⎯
2.5
50
2.0
⎯
⎯
μA
V
Unit
μA
Input Voltage
Supply Current
Clamp Diode Reverse Current
Clamp Diode Forward Voltage
Turn−ON Delay
Turn−OFF Delay
4
3
5
6
7
V
mA/ch
μA
V
μs
2
2009-11-16
TD62783AFNG
Test Circuit
1.
I
CEX
2.
V
CE (sat)
3.
I
IN (ON)
, I
CC
4.
V
IN (ON)
, V
IN (OFF)
5.
I
R
6.
V
F
7.
t
ON
, t
OFF
Note 1: Pulse Width 50
μs,
Duty Cycle 10%
Ouptut Impedance 50
Ω,
t
r
≤
5 ns, t
f
≤
10 ns
Note 2: CL includes probe and jig capacitance.
Precautions for Using
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, V
CC
and GND line since IC may be destroyed due to
short−circuit between outputs, air contamination fault, or fault by improper grounding.
3
2009-11-16
TD62783AFNG
Package Dimensions
SSOP18−P−225−0.65
Unit: mm
Weight: 0.09 g (typ.)
5
2009-11-16
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