2016-10-12
High Power Infrared Emitter (850 nm)
Version 1.5
IRL 81 A
Features:
•
High Power Infrared LED
•
Pink plastic package with lateral emission
•
Short switching times
•
Matches phototransistor LPT 80 A
Applications
For a variety of manufacturing and monitoring applications, which require beam interruption
•
•
Photointerrupters
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type:
Radiant Intensity
I
e
[mW/sr]
I
F
= 20 mA, t
p
= 20 ms
IRL 81A
IRL 81A-RS
Note:
Ordering Code
25 (≥ 6.3)
10 ... 32
Q68000A8000
Q65112A2269
Measured at a solid angle of Ω = 0.01 sr
2016-10-12
1
Version 1.5
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operation and storage temperature range
Reverse voltage
Forward current
Surge current
(t
p
= 200 µs, D = 0)
Power consumption
Thermal resistance junction - ambient
(ambient mounted on PC-board (FR4), padsize 16
mm² each)
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(T
A
= 25 °C)
Parameter
Peak wavelength
(I
F
= 100 mA, t
p
= 20 ms)
Centroid wavelength
(I
F
= 100 mA, t
p
= 20 ms)
Spectral bandwidth at 50% of I
max
(I
F
= 100 mA, t
p
= 20 ms)
Half angle
Dimensions of active chip area
Rise and fall time of I
e
( 10% and 90% of I
e max
)
(I
F
= 100 mA, R
L
= 50 Ω, 10% ... 90%)
Forward voltage
(I
F
= 20 mA, t
p
= 20 ms)
Forward voltage
(I
F
= 1 A, t
p
= 100 µs)
Reverse current
(V
R
= 5 V)
Total radiant flux
(I
F
=20 mA, t
p
=20 ms)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
peak
λ
centroid
∆λ
ϕ
LxW
t
r
, t
f
Values
860
850
30
± 12
0.3 x 0.3
12
1.3 (≤ 1.6)
2.4 (≤ 3)
Symbol
T
op
; T
stg
V
R
I
F
I
FSM
P
tot
R
thJA
Values
-40 ... 100
5
100
1
180
375
IRL 81 A
Unit
°C
V
mA
A
mW
K/W
V
ESD
2
kV
Unit
nm
nm
nm
°
mm x
mm
ns
V
V
µA
mW
(typ (max)) V
F
(typ (max)) V
F
I
R
Φ
e
not designed for
reverse operation
12
2016-10-12
2
Version 1.5
IRL 81 A
Parameter
Temperature coefficient of I
e
or Φ
e
(I
F
= 100 mA, t
p
= 20 ms)
Temperature coefficient of V
F
(I
F
= 100 mA, t
p
= 20 ms)
Temperature coefficient of wavelength
(I
F
= 100 mA, t
p
= 20 ms)
Grouping
(T
A
= 25 °C)
Group
Min Radiant Intensity
I
F
= 20 mA, t
p
= 20 ms
I
e, min
[mW / sr]
IRL 81 A - Q
IRL 81 A - R
IRL 81 A - S
IRL 81 A - T
Note:
Symbol
(typ)
(typ)
(typ)
TC
I
TC
V
TC
λ
Values
-0.5
-0.7
0.3
Unit
%/K
mV / K
nm / K
Max Radiant Intensity
I
F
= 20 mA, t
p
= 20 ms
I
e, max
[mW / sr]
12.5
20
32
50
6.3
10
16
25
measured at a solid angle of Ω = 0.01 sr
Only one group in one packing unit (variation lower 1.6:1).
2016-10-12
3
Version 1.5
Relative Spectral Emission
1)
page 8
I
rel
= f(λ), T
A
= 25°C
100
OHF04132
IRL 81 A
Radiant Intensity
1)
page 8
I
e
/ I
e
(100 mA) = f(I
F
), single pulse, t
p
= 25 µs,
T
A
= 25°C
10
1
OHL01715
I
rel
%
80
I
e
I
e (100 mA)
10
0
60
5
10
-1
40
5
20
10
-2
5
0
700
750
800
850
nm 950
λ
Max. Permissible Forward Current
I
F, max
= f(T
A
), RthJA = 375 K/W
10
-3 0
10
5 10
1
5 10
2
mA 10
3
I
F
Forward Current
1)
page 8
I
F
= f(V
F
), single pulse, t
p
= 100 µs, T
A
= 25°C
I
F
120
mA
100
OHF05577
I
F
10
0
A
OHL01713
10
-1
80
5
60
10
-2
5
40
10
-3
20
5
0
0
20
40
60
80 ˚C 100
10
-4
0
0.5
1
1.5
2
2.5 V 3
T
S
V
F
2016-10-12
4
Version 1.5
Radiation Characteristics
1)
page 8
I
rel
= f(ϕ), T
A
= 25°C
40˚
30˚
IRL 81 A
20˚
ϕ
10˚
0˚
1.0
OHF05576
50˚
0.8
60˚
0.6
70˚
0.4
80˚
90˚
0.2
0
1.0
Package Outline
100˚
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
16.51 (0.650)
16.00 (0.630)
1.52 (0.060)
5.84 (0.230)
5.59 (0.220)
1.29 (0.051)
1.14 (0.045)
2.54 (0.100)
2.03 (0.080)
2.34 (0.092)
2.08 (0.082)
4.57 (0.180)
4.32 (0.170)
1.52 (0.060)
2.54 (0.100)
spacing
0.64 (0.025)
0.46 (0.018)
Anode
1.52 (0.060)
Plastic marking
1.70 (0.067)
1.45 (0.057)
0.64 (0.025)
0.46 (0.018)
R = 0.76 (0.030)
Approx. weight 0.2 g
GEOY6461
Dimensions in mm (inch).
Package
Sidelooker, Epoxy
2016-10-12
5
嵌入式系统
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