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1N4448-A

产品描述DIODE GEN PURP 75V 500MA DO35
产品类别半导体    分立半导体   
文件大小56KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

1N4448-A概述

DIODE GEN PURP 75V 500MA DO35

1N4448-A规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)75V
电流 - 平均整流(Io)500mA
不同 If 时的电压 - 正向(Vf1V @ 10mA
速度小信号 =< 200mA(Io),任意速度
反向恢复时间(trr)4ns
不同 Vr 时的电流 - 反向漏电流5µA @ 75V
不同 Vr,F 时的电容4pF @ 0V,1MHz
安装类型通孔
封装/外壳DO-204AH,DO-35,轴向
供应商器件封装DO-35
工作温度 - 结-65°C ~ 175°C

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NOT RECOMMENDED FOR NEW
DESIGN, USE 1N4148W / 1N4448W
1N4148 / 1N4448
FAST SWITCHING DIODE
Pb
Features
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Mechanical Data
Case: DO-35
Case Material: Glass: UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Leads: Solderable per MIL-STD-202, Method 208
Terminals: Finish
Sn96.5Ag3.5. Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approximate)
Ordering Information
(Note 3)
Part Number
1N4148-A
1N4148-T
1N4448-A
1N4448-T
Notes:
Case
DO-35
DO-35
DO-35
DO-35
Packaging
10K/Ammo Pack
10K/Tape & Reel, 13-inch
10K/Ammo Pack
10K/Tape & Reel, 13-inch
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. For packaging details, go to our website at http://www.diodes.com.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0s
@ t = 1.0μs
I
FSM
1N4148
100
75
53
300
150
1.0
2.0
500
1N4448
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
500
1.68
300
-65 to +175
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
1N4148
1N4448
1N4448
V
FM
Min
0.62
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
μA
μA
μA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
J
= 150°C
V
R
= 20V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100Ω
Maximum Peak Reverse Current
Total Capacitance
Reverse Recovery Time
Notes:
I
RM
C
T
t
rr
4. Valid provided that device terminals are kept at ambient temperature.
1N4148 / 1N4448
Document number: DS12019 Rev. 9 - 3
1 of 3
www.diodes.com
May 2012
© Diodes Incorporated

1N4448-A相似产品对比

1N4448-A 1N4148-A 1N4148-T 1N4448-T
描述 DIODE GEN PURP 75V 500MA DO35 DIODE GEN PURP 75V 150MA DO35 DIODE GEN PURP 75V 150MA DO35 DIODE GEN PURP 75V 500MA DO35
二极管类型 标准 标准 标准 标准
电压 - DC 反向(Vr)(最大值) 75V 75V 75V 75V
电流 - 平均整流(Io) 500mA 150mA 150mA 500mA
不同 If 时的电压 - 正向(Vf 1V @ 10mA 1V @ 10mA 1V @ 10mA 1V @ 10mA
速度 小信号 =< 200mA(Io),任意速度 小信号 =< 200mA(Io),任意速度 小信号 =< 200mA(Io),任意速度 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr) 4ns 4ns 4ns 4ns
不同 Vr 时的电流 - 反向漏电流 5µA @ 75V 5µA @ 75V 5µA @ 75V 5µA @ 75V
不同 Vr,F 时的电容 4pF @ 0V,1MHz 4pF @ 0V,1MHz 4pF @ 0V,1MHz 4pF @ 0V,1MHz
安装类型 通孔 通孔 通孔 通孔
封装/外壳 DO-204AH,DO-35,轴向 DO-204AH,DO-35,轴向 DO-204AH,DO-35,轴向 DO-204AH,DO-35,轴向
供应商器件封装 DO-35 DO-35 DO-35 DO-35
工作温度 - 结 -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

 
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