IRD3CH53DB6
V
RRM
= 1200V
I
F (Nominal)
= 100A
T
J (max)
= 150°C
V
F
typ = 2.2V
Ultra Fast-Soft Recovery Diode
C
Applications
Industrial
Motor Drive
Uninterruptible
Power Supply
Welding
Solar
Inverter
C
Cathode
A
Anode
A
Features
Low V
F
Ultra Fast-Soft Recovery
Chip Type
IRD3CH53DB6
V
RRM
1200V
I
F(Nominal)
100A
Benefits
High efficiency in a wide range of applications
Performance optimized for IGBT anti parallel diode
Die Size
7.26 x 7.25mm
2
Package Type
Wafer
Mechanical Parameters
Die Size
Anode Pad Size
Area Total / Active
Thickness
Wafer Size
Minimum Street Width
Flat Position
Maximum-Possible Chips per Wafer
Passivation Frontside
Front Metal-Anode Pad
Backside Metal
Die Bond
Reject Ink Dot Size
Recommended Storage Environment
7.26 x 7.25
mm
2
5.81 x 5.82
52.6 / 37.6
330
µm
150
mm
100
µm
0
Degree
262 pcs
Silicon Nitride
Al-1%Si (3µm)
Cr /Ni /Ag
Electrically conductive epoxy or solder
0.25mm min (black, center)
Store in original container, in dry Nitrogen,
<6 months at an ambient temperature of 23°C
1
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IRD3CH53DB6
Maximum Ratings
Parameter
V
RRM
T
J
, T
STG
Reverse Voltage
Operating Junction and Storage Temperature
Max.
1200
-40 to +150
Units
V
°C
Static Characteristics (Tested on wafers) . T
J
=25°C
Parameter
V
RRM
V
FM
I
RM
Maximum Reverse Breakdown Voltage
Maximum Forward Voltage
Maximum Reverse Leakage Current
Min.
1200
–––
–––
Typ. Max. Units
–––
–––
–––
–––
1.6
20
V
Conditions
I
RRM
= 150µA,T
J
= 25°C
T
J
= 25°C, I
F
= 10A,
µA T
J
= 25°C, V
RRM
= 1200V
Electrical Characteristics (Not subject to production test)
Parameter
V
F
I
R
Forward Voltage
Leakage Current
Min.
–––
–––
–––
–––
Typ. Max. Units
2.2
2.3
2.0
1.7
2.7
–––
–––
–––
V
T
J
Conditions
25°C
I
F
= 100A , T
J
= 25°C
V
150°C
I
F
= 100A , T
J
= 150°C
µA
25°C
V
R
= 1200V, T
J
= 25°C
mA
150°C
V
R
= 1200V, T
J
= 150°C
Switching Characteristics (Inductive Load-Not subject to production test)
Parameter
t
rr
Q
rr
I
rr
E
rr
S
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Softness (t
b
/t
a
)
Min.
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
270
350
6.0
12
34
54
3.3
6.9
1.3
1.1
—
—
—
—
—
—
—
—
—
—
ns
µC
A
mJ
T
J
25°C
150°C
25°C
150°C
25°C
150°C
25°C
150°C
25°C
150°C
Conditions
I
F
= 100A , di/dt=400A/µs,
V
RR
= 600V
2
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January 16, 2014
400
IRD3CH53DB6
600
350
-40°C
25°C
150°C
500
IF = 200A
IF = 100A
trr - (ns)
300
IF = 50A
300
IF, Instantaneous Forward Current(A)
400
250
200
150
200
100
100
50
= 600V
R
T J = 150°C ----------
T = 25°C _____
J
V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VF, Forward Voltage Drop (V)
200
400
600
dif/dt - (A/µs)
800
1000
Fig 1.
Typical Forward Characteristic
Fig 2.
Typical t
rr
vs. di/dt
25
V R = 600V
120
IF = 200A
T = 150°C ----------
J
_____
T J = 25°C
20
100
IF = 100A
IF = 50A
80
Irr - (A)
IF = 200A
IF = 100A
IF = 50A
15
Qrr - (
C)
60
10
40
5
V R = 600V
T = 150°C ----------
J
_____
T J = 25°C
20
0
200
400
600
dif/dt - (A/µs)
800
1000
0
200
400
600
dif/dt - (A/µs)
800
1000
Fig 3.
Typical Q
rr
vs. di/dt
Fig 4.
Typical I
rr
vs. di/dt
3
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14
IF = 200A
12
IF = 100A
10
IF = 50A
= 600V
R
T J = 150°C ----------
_____
T = 25°C
J
V
IRD3CH53DB6
Err - (mJ)
8
3
6
t
rr
t
a
t
b
4
4
2
2
Q
rr
I
RRM
0
200
400
600
dif/dt - (A/µs)
800
1000
1
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
di
f
/dt
Fig 5.
Typical Err vs. di/dt
Fig 6.
Reverse Recovery Waveform
4
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January 16, 2014
IRD3CH53DB6
Die Drawing
5
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January 16, 2014
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