VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 400 A
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Dual INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
CES
I
C
at T
C
= 80 °C
V
CE(on)
(typical)
at I
C
= 400 A, T
J
= 25 °C
Speed
Package
Circuit configuration
1200 V
400 A
3.10 V
8 kHz to 30 kHz
Dual INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• Inductive heating
• Switching mode power supplies
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
SYMBOL
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
(1)
TEST CONDITIONS
MAX.
1200
± 20
UNITS
V
T
C
= 25 °C
T
C
= 80 °C
t
p
= 1 ms
T
C
= 80 °C
t
p
= 1 ms
T
J
= 150 °C
T
J
= 125 °C
f = 50 Hz, t = 1 min
660
400
800
400
800
2660
10
2500
W
μs
V
A
P
D
T
SC
V
ISOL
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
SYMBOL
V
(BR)CES
V
CE(on)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
T
J
= 25 °C
V
GE
= 15 V, I
C
= 400 A, T
J
= 25 °C
V
GE
= 15 V, I
C
= 400 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 4.0 mA, T
J
= 25 °C
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
MIN.
1200
-
-
4.4
-
-
TYP.
-
3.10
3.45
4.9
-
-
MAX.
-
3.60
-
6.0
5.0
400
mA
nA
V
UNITS
Revision: 20-Sep-17
Document Number: 94789
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
I
SC
R
g
L
CE
R
CC’+EE’
T
C
= 25 °C
t
p
10 μs, V
GE
= 15 V, T
J
= 25 °C,
V
CC
= 600 V, V
CEM
1200 V
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
V
CC
= 600 V, I
C
= 400 A, R
g
= 2.2
,
V
GE
= ± 15 V, T
J
= 125 °C
V
CC
= 600 V, I
C
= 400 A, R
g
= 2.2
,
V
GE
= ± 15 V, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
680
142
638
99
19.0
32.5
690
146
669
108
26.1
36.7
33.7
2.99
1.21
2600
0.5
-
0.32
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
-
A
nH
m
nF
mJ
ns
mJ
ns
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
DIODE ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Forward voltage
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
SYMBOL
V
F
Q
rr
I
rr
E
rec
I
F
= 400 A, V
R
= 600 V,
dI
F
/dt = -2850 A/μs
V
GE
= -15 V
TEST CONDITIONS
I
F
= 400 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.95
1.85
24.1
44.3
220
295
13.9
24.8
MAX.
2.25
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
SYMBOL
T
J
T
Stg
R
JC
R
CS
Power terminal screw: M5
Mounting screw: M6
Weight of module
-
TEST CONDITIONS
MIN.
-
-40
-
-
-
TYP.
-
-
-
-
0.035
2.5 to 5.0
3.0 to 6.0
350
-
MAX.
150
125
0.047
0.096
-
Nm
g
K/W
UNITS
°C
°C
Case to sink (conductive grease applied)
Mounting torque
Weight
Revision: 20-Sep-17
Document Number: 94789
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
120
V
CC
= 600 V
R
g
= 2.2
Ω
V
GE
= ± 15 V
T
J
=
125 °C
Eoff
800
V
GE
= 15 V
700
600
100
E
on
, E
off
(mJ)
25 °C
500
80
60
40
20
0
I
C
(A)
400
125 °C
300
200
100
0
0
1
2
3
4
5
Eon
0
200
400
600
800
V
CE
(V)
Fig. 1 - IGBT Typical Output Characteristics
I
C
(A)
Fig. 3 - IGBT Switching Loss vs. I
C
800
V
CE
= 15 V
200
180
160
700
600
500
E
on
, E
off
(mJ)
140
120
100
80
60
40
V
CC
= 600 V
I
C
= 400 A
V
GE
= ± 15 V
T
J
= 125 °C
E
on
I
C
(A)
400
300
200
100
0
4
5
6
7
8
9
10
11
25 °C
125 °C
E
off
20
0
0
5
10
15
20
25
V
GE
(V)
Fig. 2 - IGBT Typical Transfer Characteristics
R
g
(Ω)
Fig. 4 - IGBT Switching Loss vs. R
g
900
800
700
600
I
C
, Module
I
C
(A)
500
400
300
200
100
0
0
300
600
900
1200
1500
R
g
= 2.2
Ω
V
GE
= ± 15 V
T
J
=
125 °C
V
CE
(V)
Fig. 5 - RBSOA
Revision: 20-Sep-17
Document Number: 94789
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
10
-1
IGBT
Z
thJC
(K/W)
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
800
700
600
35
30
25
E
rec
E (mJ)
25 °C
500
I
F
(A)
125 °C
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
20
15
10
5
0
0
200
400
600
800
V
CC
= 600 V
R
g
= 2.2
Ω
V
GE
= - 15 V
T
J
= 125 °C
V
F
(V)
Fig. 7 - Diode Typical Forward Characteristics
I
F
(A)
Fig. 8 - Diode Switching Loss vs. I
C
30
25
20
E (mJ)
E
rec
15
10
5
0
0
5
10
15
20
25
V
CC
= 600 V
I
C
= 400 A
V
GE
= - 15 V
T
J
= 125 °C
R
g
(Ω)
Fig. 9 - Diode Switching Loss vs. R
g
Revision: 20-Sep-17
Document Number: 94789
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
10
0
10
-1
DIODE
Z
thJC
(K/W)
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95538
Revision: 20-Sep-17
Document Number: 94789
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
