VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 170 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Very low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
SOT-227
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
R
I
F(AV)
per module at T
C
= 76 °C
t
rr
Type
Package
600 V
170 A
60 ns
Modules - diode FRED Pt
®
SOT-227
DESCRIPTION / APPLICATIONS
The VS-UFB170FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
Any terminal to case, t = 1 min
TEST CONDITIONS
MAX.
600
94
850
233
2500
-55 to +175
UNITS
V
A
W
V
°C
Revision: 18-Sep-2018
Document Number: 94814
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 50 A
Forward voltage, per leg
V
FM
I
F
= 50 A, T
J
= 175 °C
I
F
= 100 A
I
F
= 100 A, T
J
= 175 °C
Reverse leakage current, per leg
Junction capacitance, per leg
I
RM
C
T
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.02
0.87
1.17
1.03
0.5
0.1
43
MAX.
-
1.19
-
1.43
-
50
2
-
μA
mA
pF
V
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25 °C, I
F
= 1 A dI
F
/dt = 200 A/μs V
R
= 30
V
Reverse recovery time, per leg
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current, per leg
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = 500 A/μs
V
R
= 200 V
I
F
= 25 A
dI
F
/dt = 500 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
60
170
270
40
54
3.4
6.8
220
300
47
61
5.2
9.1
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge, per leg
μC
Reverse recovery time, per leg
ns
Peak recovery current, per leg
A
Reverse recovery charge, per leg
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
Weight
Mounting torque
Case style
Torque to terminal
Torque to heatsink
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
-
-
0.10
30
-
-
MAX.
0.73
0.365
-
-
1.1 (9.7)
g
Nm (lbf.in)
°C/W
UNITS
1.8 (15.9) Nm (lbf.in)
SOT-227
Revision: 18-Sep-2018
Document Number: 94814
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
T
J
= 175 °C
T
J
= 125 °C
100
T
J
= 175 °C
T
J
= 125 °C
10
T
J
= 25 °C
T
J
= 25 °C
0.001
0.0001
1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
100
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
DC
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
.
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
0.01
0.0001
.
10
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 18-Sep-2018
Document Number: 94814
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB170FA60
www.vishay.com
175
150
125
DC
340
460
420
380
I
F
= 50 A
I
F
= 25 A
125 °C
V
R
= 200 V
Vishay Semiconductors
Allowable Case Temperature (°C)
t
rr
(ns)
Square wave (D = 0.5)
80 % rated V
R
applied
100
75
50
25
0
0
20
40
60
80
100
120
140
160
300
260
220
180
140
100
100
25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Allowable Case Temperature vs. Average Forward Current
(Per Leg)
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
300
12 000
11 000
V
R
= 200 V
I
F
= 50 A
I
F
= 25 A
Average Power Loss (W)
250
200
Limit RMS
150
100
50
0
0
20
40
60
80 100 120 140 160 180 200
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10 000
9000
8000
Q
rr
(nC)
7000
6000
5000
4000
3000
2000
1000
125 °C
25 °C
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
80
V
R
= 200 V
70
I
F
= 50 A
60
50
I
F
= 25 A
I
rr
(A)
40
30
20
10
0
125 °C
25 °C
100
1000
dI
F
/dt (A/µs)
Fig. 9 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
Revision: 18-Sep-2018
Document Number: 94814
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 18-Sep-2018
Document Number: 94814
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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